IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0612129
(2012-09-12)
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등록번호 |
US-9646798
(2017-05-09)
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발명자
/ 주소 |
- Hyde, Roderick A.
- Kare, Jordin T.
- Myhrvold, Nathan P.
- Pan, Tony S.
- Wood, Jr., Lowell L.
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출원인 / 주소 |
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
49 |
초록
A device includes an anode, a cathode, and a grid configured to modulate a flow of electrons from the cathode to anode. The grid is made of graphene material which is substantially transparent to the flow of electrons.
대표청구항
▼
1. A field emission device, comprising: an anode and a cathode disposed in a vacuum-holding container, wherein the cathode at least over a part of its extent is separated from the anode by a vacuum gap, wherein electrons are configured to flow between the cathode and the anode; anda first grid inter
1. A field emission device, comprising: an anode and a cathode disposed in a vacuum-holding container, wherein the cathode at least over a part of its extent is separated from the anode by a vacuum gap, wherein electrons are configured to flow between the cathode and the anode; anda first grid interposed between the anode and cathode, the first grid configured to modulate the flow of electrons between the cathode and anode, wherein the first grid comprises a plurality of pores configured to permit passage of the flow of electrons through the first grid and between the cathode and anode, wherein the pores have cross-sectional areas of between 1 nm2 and 1000 nm2,wherein the first grid is made of graphene material. 2. The device of claim 1 configured for device operation with grid and anode voltages relative to the cathode in the range of about 0 to 20 volts. 3. The device of claim 1, wherein at least one of the cathode and the anode comprises field enhancement features. 4. The device of claim 1, wherein the first grid is suspended between the cathode and the anode without physically contacting either the cathode or the anode. 5. The device of claim 1, wherein the first grid is disposed at a closer distance to the anode than a distance to the cathode and is configured to predominantly control the flow of electrons into the anode over control of the flow of electrons out of the cathode when an electric potential is applied to the first grid in device operation. 6. The device of claim 1, further comprising a second grid in addition to the first grid. 7. The device of claim 1, wherein the first grid is configured to act as a screen grid to reduce parasitic capacitance and oscillations. 8. The device of claim 1, wherein the first grid is disposed sufficiently close to the anode to induce electron emission from the anode when an electric potential is applied to the first grid in device operation. 9. The device of claim 1, wherein the first grid is configured to act as an acceleration grid to accelerate a flow of electrons between the cathode and anode. 10. The device of claim 1, wherein the graphene material of the first grid is substantially transparent to the flow of electrons between the cathode to the anode. 11. The device of claim 1, wherein the graphene material includes a graphene sheet with physical pores with carbon atoms removed formed therein. 12. The device of claim 11, wherein the pores in the graphene sheet are aligned with field emitter tips on the cathode or the anode. 13. The device of claim 11, wherein the pores in the graphene sheet are lithographically formed. 14. The device of claim 1, wherein the graphene material of the first grid includes bilayer graphene. 15. The device of claim 1, wherein the graphene material of the first grid includes functionalized graphene and/or doped graphene. 16. The device of claim 1, wherein the graphene material of the first grid includes a graphene allotrope. 17. The device of claim 1, wherein the graphene material of the first grid is disposed over a surface of the anode or the cathode. 18. The device of claim 17, wherein a separation distance between the graphene material of the first grid and the surface of the anode or the cathode is less than about 0.1 μm. 19. The device of claim 17, further comprising a scaffolding configured to physically support the graphene material of the first grid over the surface of the anode or the cathode. 20. The device of claim 19, wherein the scaffolding comprises an array of spacers or support posts. 21. The device of claim 20, wherein the spacers include one or more of dielectrics, oxides, polymers, insulators and glassy material. 22. The device of claim 17, wherein the graphene material of the first grid is supported by an intervening dielectric material layer disposed on the surface of the anode or the cathode. 23. The device of claim 22, wherein the intervening dielectric material layer is configured to allow transmission of the electron flow therethrough. 24. A method, comprising providing an anode in a vacuum-holding container to form an electronic field emission device;providing a cathode in the vacuum-holding container, wherein the cathode at least over a part of its extent is separated from the anode by a vacuum gap, wherein electrons are configured to flow between the cathode and the anode; andproviding a first grid interposed between the anode and cathode to modulate the flow of electrons between the cathode and the anode, wherein the first grid comprises a plurality of pores configured to permit passage of the flow of electrons through the first grid and between the cathode and anode, wherein the pores have cross-sectional areas of between 1 nm2 and 1000 nm2,wherein the first grid is made of graphene material. 25. The method of claim 24, wherein the electronic device is configured for device operation with grid and anode voltages relative to the cathode in the range of about 0 to 40 Volts. 26. The method of claim 24, wherein the first grid is disposed at a closer distance to the anode than a distance to the cathode and is configured to predominantly control the flow of electrons into the anode over control of the flow of electrons out of the cathode when an electric potential is applied to the first grid in device operation. 27. The method of claim 24, further comprising providing a second grid in addition to the first grid. 28. The method of claim 27, wherein the first grid and/or the second grid are configured to act as a screen grid to reduce parasitic capacitance and oscillations. 29. The method of claim 24, wherein the graphene material of the grid has a material property so that the graphene material is substantially transparent to the flow of electrons between the cathode to the anode. 30. The method of claim 24, wherein the graphene material includes a graphene sheet with physical pores formed therein. 31. The method of claim 24, further comprising providing an intervening dielectric material layer disposed on the surface of the anode or the cathode to support the graphene material of the grid. 32. The method of claim 31, wherein the intervening dielectric material layer is configured to allow transmission of the electron flow therethrough. 33. The method of claim 31, wherein the intervening dielectric material layer is partially etched to form a porous structure to support the graphene grid. 34. An electronic field emission device, comprising, a first electrode disposed in a vacuum-holding container; anda second electrode disposed in the vacuum-holding container, the second electrode separated from the first electrode by a vacuum gap,wherein the second electrode is made of a 2-d layered material including one or more of graphene, graphyne, graphdiyne, a two-dimensional carbon allotrope, and a two-dimensional semimetal material, andwherein the second electrode comprises a plurality of pores configured to permit passage of a flow of electrons from the first electrode and through the second electrode, wherein the pores have cross-sectional areas of between 1 nm2 and 1000 nm2, wherein the second electrode is configured to modulate or change an energy barrier to the flow of electrons from the first electrode and across the vacuum gap separating the first electrode from the second electrode. 35. The electronic device of claim 34, wherein the second electrode is made of a 2-d layered material having a material property of an electron transmission probability for 1 eV electrons that exceeds 0.25. 36. The electronic device of claim 34, wherein the second electrode is made of a 2-d layered material having an electronic bandgap therein, and wherein the electronic bandgap of the 2-d layered material is such as to permit transmission of the electron flow therethrough in operation of device. 37. The electronic device of claim 34, wherein a dielectric material layer disposed over the surface of the first electrode is a porous dielectric material layer configured to permit formation of vacuum gaps between the first electrode and the second electrode. 38. The electronic device of claim 37, wherein the 2-d layer material of the second electrode has pores therein permitting chemical etching therethrough to remove portions of the dielectric material. 39. The electronic device of claim 34, further comprising circuitry configured to impose an electrical potential between the first and second electrodes. 40. A method, comprising, providing a first electrode in a vacuum-holding container of an electronic field emission device; andproviding a second electrode in the vacuum-holding container, the second electrode separated from the first electrode by a vacuum gap,wherein the second electrode is made of a 2-d layered material including one or more of graphene, graphyne, graphdiyne, a two-dimensional carbon allotrope, and a two-dimensional semimetal material, andwherein the second electrode comprises a plurality of pores configured to permit passage of a flow of electrons from the first electrode and through the second electrode, wherein the pores have cross-sectional areas of between 1 nm2 and 1000 nm2, wherein the second electrode is configured to change an energy potential profile to modulate the flow of electrons from the first electrode and across the vacuum gap separating the first electrode from the second electrode. 41. The method of claim 40, further comprising selecting an electronic bandgap of the 2-d layered material so as to permit or forbid transmission of the electron flow therethrough based on electron energy in operation of the electronic device; and using a 2-d layered material having an electron transmission probability that for 10 eV electrons exceeds 0.50. 42. The method of claim 10, further comprising providing circuitry to impose an electrical potential between the first and second electrodes.
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