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A device, a method, and a use thereof for detecting a concentration of a gas or of a gas component. The device as a gas sensor includes at least one sensor element including a gas-sensitive layer and a heating element for heating the gas-sensitive layer. The heating element is able to heat the sensi

A device, a method, and a use thereof for detecting a concentration of a gas or of a gas component. The device as a gas sensor includes at least one sensor element including a gas-sensitive layer and a heating element for heating the gas-sensitive layer. The heating element is able to heat the sensitive layer to a desired temperature prior to the detection and/or is able to maintain it at a desired temperature during the detection. The heating element allows the gas-sensitive layer to be outgassed if needed, so as to allow absorption again. To heat the heating element, there is a first contacting to which a first voltage may be applied. Moreover, subsequent to the heating step, a second voltage may be applied to the sensor element or to the gas-sensitive layer for measured value detection with the aid of a second contacting. The two contactings at least partially have a shared actuation by being electrically connected to each other, the first contacting including a diode which essentially blocks current from flowing through the heating element when the second voltage, in particular the polarity of the second voltage, is applied.

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1. A device for detecting a concentration of a gas or of a gas component, comprising: a sensor element including a gas-sensitive layer; anda heating element for heating the gas-sensitive layer;wherein a first voltage is applied to the heating element for heating the gas-sensitive layer with the aid

1. A device for detecting a concentration of a gas or of a gas component, comprising: a sensor element including a gas-sensitive layer; anda heating element for heating the gas-sensitive layer;wherein a first voltage is applied to the heating element for heating the gas-sensitive layer with the aid of a first electrical contacting,wherein a second voltage is applied to the sensor element for detecting a concentration variable representing the concentration of the gas or of the gas component with the aid of a second contacting, andwherein the first and second contactings are electrically connected to each other, and the first electrical contacting includes a diode, which essentially blocks the flow of current through the heating element when the second voltage is applied. 2. The device of claim 1, wherein the gas-sensitive layer is situated on the surface of a semiconductor substrate, the connection of the second contacting to the first contacting being carried out at least partially by the semiconductor substrate. 3. The device of claim 2, wherein the p-n junction is created by buried p-doped and n-doped layers. 4. The device of claim 1, wherein the first voltage is greater than the breakdown voltage or threshold voltage of the diode. 5. The device of claim 1, wherein at least two diodes connected in series are provided in the first contacting. 6. The device of claim 1, wherein the first and second contactings include at least two shared contacts, the first and second voltages being applied with the aid of the in particular one voltage source. 7. The device of claim 1, wherein the first and second voltages have different polarities. 8. The device of claim 1, wherein there is at least one detecting arrangement for detecting a temperature variable representing the temperature of the heating element and/or of the sensitive layer, and wherein the detection of the concentration of the gas or of the gas component is carried out as a function of the detected temperature variable. 9. A method for detecting a concentration of a gas or of a gas component, the method comprising: providing a device for detecting the concentration of the gas or of the gas component, the device including a sensor element including a gas-sensitive layer, and a heating element for heating the gas-sensitive layer, the device being operable to perform the following: applying a first voltage via a first electrical contacting to the heating element for heating the gas-sensitive layer;applying a second voltage via a second electrical contacting to the sensor element for detecting the concentration of the gas or of the gas component; anddetecting a concentration variable representing the concentration of the gas or of the gas component;wherein the first and second contactings are electrically connected to each other, and the second voltage is selected so that it essentially blocks current from flowing through the heating element by a diode provided in the first electrical contacting. 10. The method of claim 9, wherein the first voltage is selected to be greater than the breakdown voltage or threshold voltage of the diode, and wherein the second voltage is smaller than the breakdown voltage or threshold voltage of the diode. 11. The method of claim 9, wherein a temperature variable is detected which represents the temperature of the heating element and/or of the sensitive layer when the first voltage and/or second voltage is/are applied, the derivation of the concentration of the gas or the gas component being carried out as a function of the concentration variable and the temperature variable. 12. The method of claim 9, wherein different polarities are used for the first and second (DC) voltages. 13. A mobile processor device, comprising: a device for detecting a concentration of a gas or of a gas component, including: a sensor element including a gas-sensitive layer; anda heating element for heating the gas-sensitive layer;wherein a first voltage is applied to the heating element for heating the gas-sensitive layer with the aid of a first electrical contacting,wherein a second voltage is applied to the sensor element for detecting a concentration variable representing the concentration of the gas or of the gas component with the aid of a second contacting, andwherein the first and second contactings are electrically connected to each other, and the first electrical contacting includes a diode, which essentially blocks the flow of current through the heating element when the second voltage is applied. 14. The mobile processor device of claim 13, wherein the mobile processor device includes a mobile terminal, a mobile phone, a smart phone, a tablet PC or a portable computer. 15. The device of claim 1, wherein the gas-sensitive layer is situated on the surface of a semiconductor substrate, the connection of the second contacting to the first contacting being carried out at least partially by the semiconductor substrate, and it being provided that the connection is created in the form of a p-n junction of the doped semiconductor material. 16. The device of claim 1, wherein the first voltage is greater than the breakdown voltage or threshold voltage of the diode, the second voltage being smaller than the breakdown voltage or threshold voltage of the diode. 17. The device of claim 1, wherein at least two diodes connected in series are provided in the first contacting, the first voltage being greater than the sum of the breakdown voltage or threshold voltage of the diodes which are connected in series. 18. The device of claim 1, wherein the first and second voltages have different polarities, and wherein there is one switching arrangement which switches the polarity of the voltage source.