IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0687943
(2015-04-16)
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등록번호 |
US-9656859
(2017-05-23)
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발명자
/ 주소 |
- Meyer, David J.
- Downey, Brian P.
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출원인 / 주소 |
- The United States of America, as represented by the Secretary of the Navy
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대리인 / 주소 |
US Naval Research Laboratory
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인용정보 |
피인용 횟수 :
0 인용 특허 :
1 |
초록
▼
A process for fabricating a suspended microelectromechanical system (MEMS) structure comprising epitaxial semiconductor functional layers that are partially or completely suspended over a substrate. A sacrificial release layer and a functional device layer are formed on a substrate. The functional d
A process for fabricating a suspended microelectromechanical system (MEMS) structure comprising epitaxial semiconductor functional layers that are partially or completely suspended over a substrate. A sacrificial release layer and a functional device layer are formed on a substrate. The functional device layer is etched to form windows in the functional device layer defining an outline of a suspended MEMS device to be formed from the functional device layer. The sacrificial release layer is then etched with a selective release etchant to remove the sacrificial release layer underneath the functional layer in the area defined by the windows to form the suspended MEMS structure.
대표청구항
▼
1. A method for fabricating a suspended MEMS structure, comprising: providing a substrate comprising a single-crystal material;epitaxially growing a sacrificial release layer comprising a transition metal nitride (TMN) material on an upper surface of the substrate to form an epitaxial TMN sacrificia
1. A method for fabricating a suspended MEMS structure, comprising: providing a substrate comprising a single-crystal material;epitaxially growing a sacrificial release layer comprising a transition metal nitride (TMN) material on an upper surface of the substrate to form an epitaxial TMN sacrificial release layer;epitaxially growing a functional device layer comprising a Group III-Nitride material or SiC on an upper surface of the TMN sacrificial release layer,patterning a portion of the functional device layer to define an outline of a suspended MEMS structure to be formed from a defined portion of the functional device layer;in a first etching step, etching the patterned portion of the functional device layer to form one or more windows in the functional device layer and to further define the outline of the suspended MEMS structure; andin a second etching step, using a selective release agent, etching the epitaxial TMN sacrificial release layer to remove the epitaxial TMN sacrificial release layer from underneath the defined portion of the functional device layer to form the suspended MEMS structure. 2. The method according to claim 1, wherein at least one of the sacrificial release layer and the functional device layer comprises a single-crystal material. 3. The method according to claim 1, wherein at least one of the sacrificial release layer and the functional device layer comprises a polycrystalline material. 4. The method according to claim 1, wherein the functional device layer comprises an amorphous material. 5. The method according to claim 1, wherein the substrate is one of Si, SiC, sapphire, AlN, and GaN. 6. The method according to claim 1, wherein the epitaxial TMN sacrificial release layer comprises a single-crystal TMN material, a polycrystalline TMN material, or a ternary TMN compound material. 7. The method according to claim 6, wherein the epitaxial TMN sacrificial release layer comprises one of Nb2N, Ta2N, tantalum nitride (TaNx), niobium nitride (NbNx), tungsten nitride (WNx), and molybdenum nitride (MoNx), where x>0. 8. The method according to claim 1, wherein the functional device layer comprises a single-crystal Group III-Nitride material, a polycrystalline Group III-Nitride material, or an amorphous Group III-Nitride material. 9. The method according to claim 1, wherein the functional device layer comprises single-crystal SiC, polycrystalline SiC, or amorphous SiC. 10. The method according to claim 1, wherein the functional device layer is patterned using photo, imprint, or e-beam lithography. 11. The method according to claim 1, wherein the first etching step is performed by one of dry plasma etching, wet chemical etching, or ion beam etching. 12. The method according to claim 1, wherein the first etching step further etches the selective release layer to extend the window to the substrate. 13. The method according to claim 1, wherein the selective release agent used in the second etching step is XeF2 gas. 14. The method according to claim 1, wherein the selective release layer is formed from Ta2N and the selective release agent is ClF3 gas. 15. The method according to claim 1, wherein the selective release agent is a wet-chemical etchant. 16. The method according to claim 15, wherein the wet-chemical etchant comprises hydrofluoric acid, nitric acid, and/or hydrochloric acid. 17. The method according to claim 1, wherein the selective release layer is formed in situ with formation of the functional device layer. 18. The method according to claim 1, wherein the sacrificial release layer comprises a plurality of material layers, wherein at least one of the material layers is an epitaxial TMN layer. 19. The method according to claim 1, wherein the functional device layer comprises a plurality of material layers, wherein at least one of the material layers comprises a Group III-Nitride or SiC material layer.
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