The Research Foundation for The State University of New York
대리인 / 주소
The Farrell Law Firm, P.C.
인용정보
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1
초록▼
Provided is a detector that includes a scintillator, a common electrode, a pixel electrode, and a plurality of insulating layers, with a plurality of nano-pillars formed in the plurality of insulating layers, a nano-scale well structure between adjacent nano-pillars, with a-Se separating the adjacen
Provided is a detector that includes a scintillator, a common electrode, a pixel electrode, and a plurality of insulating layers, with a plurality of nano-pillars formed in the plurality of insulating layers, a nano-scale well structure between adjacent nano-pillars, with a-Se separating the adjacent nano-pillars, and a method for operation thereof.
대표청구항▼
1. A detector comprising: a common electrode;a pixel electrode; anda plurality of insulating layers,wherein a plurality of nano-pillars are formed in the plurality of insulating layers, with a nanoscale well structure between adjacent nano-pillars, andwherein amorphous selenium (a-Se) separates the
1. A detector comprising: a common electrode;a pixel electrode; anda plurality of insulating layers,wherein a plurality of nano-pillars are formed in the plurality of insulating layers, with a nanoscale well structure between adjacent nano-pillars, andwherein amorphous selenium (a-Se) separates the adjacent nano-pillars. 2. The detector of claim 1, wherein the a-Se fills the nanoscale well structure. 3. The detector of claim 1, wherein an avalanche transport region separates the nano-pillars and the common electrode. 4. The detector of claim 1, further comprising an electron blocking layer separating the nano-pillars and the nanoscale well structure from the a-Se. 5. The detector of claim 4, wherein the electron blocking layer defines a detection region. 6. The detector of claim 1, further comprising a scintillator adjacent to the common electrode, on a side of the common electrode opposite the plurality of insulating layers. 7. The detector of claim 6, wherein avalanche gain occurs above the electron blocking layer, outside of the detection region. 8. The detector of claim 1, further comprising a nano-electric Frisch grid embedded within each nano-pillar. 9. The detector of claim 1, further comprising a hole blocking layer between the common electrode and the a-Se. 10. A detection method comprising: detecting movement of holes in a detection region of a detector that includes a scintillator, a common electrode, a pixel electrode, a plurality of insulating layers and a substrate,wherein the plurality of nano-pillars are formed in the plurality of insulating layers, with a nanoscale well structure between adjacent nano-pillars, and amorphous selenium (a-Se) separates the adjacent nano-pillars. 11. The method of claim 10, wherein the a-Se fills the nanoscale well structure. 12. The method of claim 10, wherein an avalanche transport region separates the nano-pillars and the common electrode. 13. The method of claim 10, wherein an electron blocking layer separates the nano-pillars and the nanoscale well structure from the a-Se. 14. The method of claim 13, wherein the electron blocking layer defines the detection region. 15. The method of claim 14, wherein avalanche gain occurs above the electron blocking layer, outside of the detection region. 16. The method of claim 10, wherein a nano-electric grid is embedded within each nano-pillar. 17. The method of claim 16, wherein the nano-electric grid is a Frisch grid. 18. The method of claim 16, wherein the nano-electric grid masks detection of electrons within the detection region. 19. The method of claim 10, wherein a hole blocking layer is provided between the common electrode and the a-Se. 20. A method of manufacture of a detector that comprises a common electrode, a pixel electrode, and a plurality of insulating layers, the method comprising: forming a plurality of nano-pillars in the plurality of insulating layers, with a nanoscale well structure between adjacent nano-pillars, andinjecting amorphous selenium (a-Se) between the adjacent nano-pillars.
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이 특허에 인용된 특허 (1)
Elabd Hammam, Broadband multicolor photon counter for low light detection and imaging.
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