A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially
A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.
대표청구항▼
1. A semiconductor light-emitting device comprising: a semiconductor structure that comprises a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor structure having a plurality of circular contact holes extended to the first semiconductor layer from the se
1. A semiconductor light-emitting device comprising: a semiconductor structure that comprises a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor structure having a plurality of circular contact holes extended to the first semiconductor layer from the second semiconductor layer, side surfaces of the plurality of circular contact holes being slanted to a stacked direction of the first semiconductor layer, the active layer, and the second semiconductor layer;a first electrode layer and a second electrode layer that are disposed on the second semiconductor layer and are respectively electrically connected to the first semiconductor layer and the second semiconductor layer, the first electrode layer being electrically connected to the first semiconductor layer through a circular contact hole selected from the plurality of circular contact holes;an insulating layer that is formed on a top surface of the semiconductor structure to insulate the first electrode layer from the second electrode layer, the insulating layer being formed on a slanted side surface of the selected circular contact hole;an electrode layer that comprises a first electrode pad disposed on the first electrode layer and a second electrode pad disposed on the second electrode layer; andan insulating barrier layer that is disposed between the first electrode pad and the second electrode pad,wherein the insulating layer is disposed between the insulating barrier layer and the second electrode layer . 2. The semiconductor light-emitting device of claim 1, wherein the first electrode layer covers a top of the selected circular contact hole to be electrically connected to the first semiconductor layer through the selected circular contact hole that is formed from passing through the second semiconductor layer and the active layer to the first semiconductor layer. 3. The semiconductor light-emitting device of claim 2, wherein the insulating layer has a circular shape portion on the slanted side surface of the selected circular contact hole so that the first electrode layer is insulated from the second semiconductor layer, and the circular shape portion of the insulating layer surrounds the first electrode layer within the selected circular contact hole. 4. The semiconductor light-emitting device of claim 1, further comprising first and second seed layers conterminous with the first and second electrode pads, respectively. 5. The semiconductor light-emitting device of claim 1, wherein the first electrode pad is configured to be connected to the first electrode layer, and the second electrode pad is configured to be connected to the second electrode layer, and a portion of the first electrode pad vertically overlaps with a portion of the second electrode layer. 6. A semiconductor light-emitting device comprising: a semiconductor structure that comprises a first semiconductor layer, an active layer, and a second semiconductor layer;a first electrode layer and a second electrode layer that are disposed on the second semiconductor layer and are respectively connected to the first semiconductor layer and the second semiconductor layer;a first insulating layer that is formed on a top surface of the semiconductor structure and insulates the first electrode layer from the second electrode layer;a second insulating layer that covers the first insulating layer and the second electrode layer, the second insulating layer being in contact with the first insulating layer with an interface between the first insulating layer and the second insulating layer;a first metal layer that is connected to the first electrode layer;a second metal layer that is connected to the second electrode layer;an electrode layer that comprises a first electrode pad that is disposed on the first metal layer and a second electrode pad that is disposed on the second metal layer; andan insulating barrier layer that is disposed between the first electrode pad and the second electrode pad,wherein the first insulating layer is disposed between the insulating barrier layer and the second electrode layer . 7. The semiconductor light-emitting device of claim 6, wherein the first electrode layer is electrically connected to the first semiconductor layer through at least one contact hole that is formed passing through the second semiconductor layer and the active layer to the first semiconductor layer, and the first metal layer is formed to be connected to the first electrode layer filled in the at least one contact hole. 8. The semiconductor light-emitting device of claim 7, wherein the first insulating layer extends to be formed on a side wall of the at least one contact hole so that the first electrode layer is insulated from the second semiconductor layer. 9. The semiconductor light-emitting device of claim 6, wherein the first metal layer is disposed between the first electrode pad and the first electrode layer, and the second metal layer is disposed between the second electrode pad and the second electrode layer. 10. The semiconductor light-emitting device of claim 6, further comprising first and second seed layers conterminous with the first and second electrode pads, respectively. 11. The semiconductor light-emitting device of claim 6, wherein a portion of the first metal layer vertically overlaps with a portion of the second electrode layer. 12. A semiconductor light-emitting device comprising: a semiconductor structure that comprises a first semiconductor layer, an active layer, and a second semiconductor layer;a first electrode layer and a second electrode layer that are disposed on the second semiconductor layer and are respectively connected to the first semiconductor layer and the second semiconductor layer;a first insulating layer that is formed on a top surface of the semiconductor structure and insulates the first electrode layer from the second electrode layer;an electrode layer that comprises a first electrode pad disposed on the first electrode layer and a second electrode pad disposed on the second electrode layer;a first metal layer connected to the first electrode layer and the first electrode pad between the first electrode layer and the first electrode pad;a second metal layer connected to the second electrode layer and the second electrode pad between the second electrode layer and the second electrode pad;a second insulating layer interposed between the first metal layer and the second metal layer, the second insulating layer being in contact with the first insulating layer with an interface between the first insulating layer and the second insulating layer; andan insulating barrier layer that is disposed between the first electrode pad and the second electrode pad,wherein a portion of the first electrode pad vertically overlaps with a portion of the second electrode layer. 13. The semiconductor light-emitting device of claim 12, wherein a portion of the first electrode pad vertically overlaps with a portion of the second semiconductor layer. 14. The semiconductor light-emitting device of claim 12, wherein the first electrode pad has a bottommost portion at a lower end thereof, and the bottommost portion of the first electrode pad is faced with a top surface of the second semiconductor layer. 15. The semiconductor light-emitting device of claim 12, wherein a portion of the second electrode layer, a portion of the first insulating layer, and a portion of the second metal layer are sequentially disposed on the semiconductor structure in an order of the portion of the second electrode layer, the portion of the first insulating layer, and the portion of the second metal layer. 16. The semiconductor light-emitting device of claim 12, wherein a portion of the first metal layer vertically overlaps with a portion of the second electrode layer. 17. The semiconductor light-emitting device of claim 12, wherein the second insulating layer has a bottommost portion at a lower end thereof, and the bottommost portion of the second insulating layer is faced with a top surface of the second semiconductor layer. 18. The semiconductor light-emitting device of claim 12, wherein the first metal layer comprises at least two metal layers having a different width from each other in a horizontal direction; and the second metal layer comprises at least two metal layers having a different width from each other in the horizontal direction. 19. The semiconductor light-emitting device of claim 18, wherein the second insulating layer has a stepped sidewall facing the second metal layer.
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