[특허]Particle-optical systems and arrangements and particle-optical components for such systems and arrangements

Applied Materials Israel, Ltd.

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Particle-optical systems and arrangements and particle-optical components for such systems and arrangements

특허상세정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01J-037/30 H01J-037/10 H01J-037/147 B82Y-010/00 B82Y-040/00 H01J-037/09 H01J-037/28 H01J-037/317 H01J-037/14
출원번호	US-0975314 (2015-12-18)
등록번호	US-9673024 (2017-06-06)
발명자 / 주소	Knippelmeyer, Rainer Kienzle, Oliver Kemen, Thomas Mueller, Heiko Uhlemann, Stephan Haider, Maximilian Casares, Antonio Rogers, Steven
출원인 / 주소	Applied Materials Israel, Ltd.
대리인 / 주소	Morris & Kamlay LLP
인용정보	피인용 횟수 : 1 인용 특허 : 49

초록
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A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.

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1. A particle-optical arrangement, comprising: at least one charged-particle source for generating at least one beam of charged particles;at least one multi-aperture plate having a plurality of apertures formed in the multi-aperture plate, wherein the plurality of apertures being arranged in a first pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture aperture plate;a first focusing lens providing a focusing field in a first region between the charged-particle source and the multi-aperture plate; anda decelerating electrode providing a decelerating field in a second region in between the first focusing lens and the multi-aperture plate, such that a kinetic energy of the charged particles passing the first focusing lens is higher than a kinetic energy of the charged particles passing the multi-aperture plate. 2. A particle-optical arrangement, comprising: at least one charged-particle source for generating at least one beam of charged particles,at least one multi-aperture plate having a plurality of apertures formed in the multi-aperture plate, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture aperture plate;a first focusing lens providing a focusing field in a first region adjacent to the multi-aperture plate in a direction of the at least one beam; andan energy changing electrode providing an electrical field for changing a kinetic energy of charged particles of the beam in a second region adjacent to the multi-aperture plate in the direction of the at least one beam, and wherein the first region where the focusing field is provided and the second region where the energy changing field is provided are overlapping regions. 3. The particle-optical arrangement according to claim 2, wherein the overlapping regions are located substantially upstream of the multi-aperture plate, wherein an overlap between the energy changing field and the focusing field is more than 1%. 4. The particle-optical arrangement according to claim 2, wherein the overlapping regions are located substantially downstream of the multi-aperture plate, wherein an overlap between the energy changing field and the focusing field is more than 1%. 5. The particle-optical arrangement according to claim 2, wherein the energy changing field is a decelerating electrical field for reducing the kinetic energy of the charged particles of the beam. 6. The particle-optical arrangement according to claim 2, wherein the energy changing field is an accelerating electrical field for increasing the kinetic energy of the charged particles of the beam. 7. A multi-electron-beamlet inspection system, comprising: a stage for mounting an object to be inspected;at least one electron source for generating at least one electron beam;at least one multi-aperture plate having a plurality of apertures formed in the plate, wherein the plurality of apertures is arranged in a first pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the aperture plate;a first focusing lens providing a focusing field in a first region between the charged-particle source and the multi-aperture plate;a decelerating electrode providing a decelerating field in a second region in between of the first focusing lens and the multi-aperture plate, such that a kinetic energy of the charged particles passing the first focusing lens is higher than a kinetic energy of the charged particles passing the multi-aperture plate;an objective lens for focusing the array of electron beamlets on the object to be inspected; anda detector arrangement for detecting secondary electrons from the object generated by the plurality of beamlets, to produce an array of signals corresponding to the secondary electrons generated by substantially a single electron beamlet in the plurality of beamlets. 8. A charged-particle multi-beamlet lithography system for writing a pattern on a resist coated object, the system comprising: a stage for mounting the object;at least one electron source for generating at least one electron beam;at least one multi-aperture plate having a plurality of apertures formed in the plate, wherein the plurality of apertures being arranged in a first pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the aperture plate;a first focusing lens providing a focusing field in a first region between the charged-particle source and the multi-aperture plate;a decelerating electrode providing a decelerating field in a second region in between of the first focusing lens and the multi-aperture plate, such that a kinetic energy of the charged particles passing the first focusing lens is higher than a kinetic energy of the charged particles passing the multi-aperture plate;an objective lens for focusing the plurality of beamlets on the object to be inspected; andan objective lens for focusing the plurality of beamlets on the object. 9. A method of forming a plurality of charged-particle beamlets, the method comprising: generating at least one beam of charged particles, the particles having a first kinetic energy;providing first focusing lens on the at least one beam of charged particles in a first region;forming the plurality of charged-particle beamlets from the at least one beam of charged particles with at least one multi-aperture plate disposed downstream of the first region and having a plurality of apertures formed in the plate;providing a decelerating field in a second region downstream of the first region such that the particles have a second kinetic energy downstream of the second region, wherein the second kinetic energy is less than the first kinetic energy. 10. A method of multi-electron-beamlet inspection of a substrate, the method comprising: generating at least one beam of electrons, the electrons having a first kinetic energy;providing first focusing lens on the at least one beam of electrons in a first region;forming a plurality of electron beamlets from the at least one beam of electrons with at least one multi-aperture plate disposed downstream of the first region and having a plurality of apertures formed in the plate;providing a decelerating field in a second region downstream of the first region such that the electrons have a second kinetic energy downstream of the second region, wherein the second kinetic energy is less than the first kinetic energy; andforming an array of electron beam spots with the plurality of beamlets on the substrate. 11. A method of writing a pattern on a resist coated object, the method comprising: generating at least one beam of electrons, the electrons having a first kinetic energy;providing first focusing lens on the at least one beam of electrons in a first region;forming a plurality of electron beamlets from the at least one beam of electrons with at least one multi-aperture plate disposed downstream of the first region and having a plurality of apertures formed in the plate;providing a decelerating field in a second region downstream of the first region such that the electrons have a second kinetic energy downstream of the second region, wherein the second kinetic energy is less than the first kinetic energy; andforming an array of electron beam spots on the resist coated object with the plurality of beamlets. 12. A multi-electron-beamlet inspection system, comprising: a stage for mounting an object to be inspected;at least one charged-particle source for generating a beam of electrons,at least one multi-aperture plate having a plurality of apertures formed in the plate, wherein the plurality of apertures being arranged in a first pattern, and wherein a plurality of electron beamlets is formed from the beam of electrons downstream of the aperture plate;a first focusing lens providing a focusing field in a first region adjacent to the multi-aperture plate in a direction of the at least one beam;an energy changing electrode providing an electrical field for changing a kinetic energy of electrons of the beam in a second region adjacent to the multi-aperture plate in the direction of the at least one beam, and wherein the first region where the focusing field is provided and the second region where the energy changing field is provided are overlapping regions; anda detector arrangement for detecting secondary electrons from the object generated by the plurality of beamlets, to produce an array of signals corresponding to the secondary electrons generated by substantially a single beamlet in the plurality of beamlets. 13. A charged-particle multi-beamlet lithography system for writing a pattern on a resist coated object, the system comprising: a stage for mounting the object;at least one charged-particle source for generating at least one charged-particle beam;at least one multi-aperture plate having a plurality of apertures formed in the plate, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the aperture plate;a first focusing lens providing a focusing field in a first region adjacent to the multi-aperture plate in a direction of the at least one beam; andan energy changing electrode providing an electrical field for changing a kinetic energy of charged particles of the beam in a second region adjacent to the multi-aperture plate in the direction of the at least one beam, and wherein the first region where the focusing field is provided and the second region where the energy changing field is provided are overlapping regions;an objective lens for focusing the plurality of beamlets on the object. 14. A method of multi-electron-beamlet inspection of a substrate, the method comprising: generating at least one beam of charged particles, the particles;forming the plurality of charged-particle beamlets from the at least one beam of charged particles with at least one multi-aperture plate having a plurality of apertures formed in the plate;providing a focusing field and a kinetic energy changing field overlapping the focusing field, wherein the energy changing field changes a kinetic energy of the at least one beam of charged particles upstream of the at least one multi-aperture plate; andforming an array of electron beam spots with the plurality of beamlets on the substrate. 15. A method of writing a pattern on a resist coated object, the method comprising: generating at least one beam of charged particles, the particles;forming the plurality of charged-particle beamlets from the at least one beam of charged particles with at least one multi-aperture plate having a plurality of apertures formed in the plate;providing a focusing field and a kinetic energy changing field overlapping the focusing field, wherein the energy changing field changes a kinetic energy of the at least one beam of charged particles upstream of the at least one multi-aperture plate; andforming an array of electron beam spots on the resist coated object with the plurality of electron beamlets.

이 특허에 인용된 특허 (49)

이 특허를 인용한 특허 피인용횟수: 1

Frosien, Jürgen; Kruit, Pieter. Method for inspecting a specimen and charged particle multi-beam device. USP2018039922796.

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Particle-optical systems and arrangements and particle-optical components for such systems and arrangements

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