IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0409536
(2013-06-25)
|
등록번호 |
US-9676632
(2017-06-13)
|
국제출원번호 |
PCT/US2013/047548
(2013-06-25)
|
국제공개번호 |
WO2014/004463
(2014-01-03)
|
발명자
/ 주소 |
- Mancini, Paul A.
- Turenne, Alain
|
출원인 / 주소 |
|
대리인 / 주소 |
Schwegman Lundberg & Woessner, P.A.
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
7 |
초록
A method that includes: (a) forming a molten liquid from a solvent metal, silicon, and an alkali magnesium halide; (b) cooling the molten liquid to provide silicon crystals and a mother liquor; and (c) separating the silicon crystals from the mother liquor.
대표청구항
▼
1. A method comprising: (a) forming a molten liquid from a solvent metal, a first silicon, and an alkali magnesium halide, wherein the solvent metal comprises at least one of copper, tin, zinc, antimony, silver, bismuth, aluminum, cadmium, gallium, indium, magnesium, lead, and alloys thereof, wherei
1. A method comprising: (a) forming a molten liquid from a solvent metal, a first silicon, and an alkali magnesium halide, wherein the solvent metal comprises at least one of copper, tin, zinc, antimony, silver, bismuth, aluminum, cadmium, gallium, indium, magnesium, lead, and alloys thereof, wherein the alkali magnesium halide is employed in at least about 0.10 wt. % of the molten liquid and up to about 10 wt. % of the molten liquid and the alkali magnesium halide comprises a combination of at least two of: synthetic carnallite; anhydrous carnallite; potassium magnesium chloride, KMgCl3, K2MgCl4, K3Mg2Cl7, Na2MgCl4, and MgNaCl3, and wherein the first silicon has a phosphorous level up to about 60 ppmw and a boron level up to about 15 ppmw;(b) cooling the molten liquid to provide silicon crystals and a mother liquor; and(c) separating the silicon crystals from the mother liquor;wherein the silicon crystals are purified from phosphorous and boron compared to the first silicon. 2. The method of claim 1, wherein the molten liquid is formed by contacting the solvent metal and the first silicon to form a mixture, heating the mixture to form a molten liquid, and then contacting the molten liquid with the alkali magnesium halide. 3. The method of claim 2, wherein the alkali magnesium halide is contacted with the molten liquid at a bottom portion of the molten liquid by injecting the alkali magnesium halide into a bottom portion of the molten liquid. 4. The method of claim 1, wherein the silicon crystals separated from the mother liquor comprise less than about 8 ppmw phosphorous without any further purification. 5. The method of claim 1, wherein the silicon crystals separated from the mother liquor comprise less than about 5 ppmw boron without any further purification. 6. The method of claim 1, wherein the cooling of the molten liquid to provide the silicon crystals and the mother liquor is carried out to a temperature above the solidus temperature. 7. The method of claim 1, wherein the silicon crystals separated from the mother liquor comprise less than about 3,000 ppmw aluminum. 8. The method of claim 1, wherein any one or more of steps (a)-(c) is repeated one or more times. 9. The method of claim 1, wherein the mother liquor comprises at least about 1,000 ppmw aluminum. 10. A method comprising: (a) forming a molten liquid from a solvent metal, silicon, and an alkali magnesium halide, wherein the alkali magnesium halide comprises a combination of KMgCl3, K2MgCl4, and K3Mg2Cl7;(b) cooling the molten liquid to provide silicon crystals and a mother liquor; and(c) separating the silicon crystals from the mother liquor. 11. The method of claim 1, wherein the alkali magnesium halide comprises potassium magnesium chloride as at least one of fine particles or a granular form. 12. The method of claim 1, further comprising contacting the molten liquid with magnesium metal (Mg0). 13. The method of claim 12, wherein the magnesium metal is employed in at least about 0.1 wt. % of the molten liquid. 14. The method of claim 1, further comprising contacting the molten liquid with at least one of MgCl2, KCl, and NaCl. 15. The method of claim 1, wherein the silicon crystals are purified from phosphorous, such that at least about 25 wt. % of the phosphorous is removed from the first silicon. 16. The method of claim 1, wherein the silicon crystals separated from the mother liquor comprise less than about 4 ppmw phosphorous and less than about 1 ppmw boron without any further purification. 17. The method of claim 1, wherein the silicon crystals separated from the mother liquor are purified such that at least about 33 wt. % of the phosphorous from the first silicon is removed without any further purification. 18. A method comprising: (a) forming a molten liquid from a solvent metal, a first silicon, and an alkali magnesium halide, wherein the alkali magnesium halide comprises a combination of two or more of YMgX3, Y2MgX4, and Y3Mg2X7, wherein X is a halide element and Y is an alkali element;(b) cooling the molten liquid to provide silicon crystals and a mother liquor; and(c) separating the silicon crystals from the mother liquor. 19. The method of claim 18, wherein each X is independently selected from a chlorine (Cl) atom or a bromine (Br) atom and each Y is independent selected from a potassium (K) atom or a sodium (Na) atom.
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