There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the
There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
대표청구항▼
1. A method of manufacturing a semiconductor light emitting device, the method comprising: forming a light emitting structure having a first semiconductor layer, an active layer, and a second semiconductor layer sequentially grown on a semiconductor growth substrate;forming a second electrode layer
1. A method of manufacturing a semiconductor light emitting device, the method comprising: forming a light emitting structure having a first semiconductor layer, an active layer, and a second semiconductor layer sequentially grown on a semiconductor growth substrate;forming a second electrode layer on the second semiconductor layer;forming a plurality of recesses, each of which penetrating the second electrode layer, the second semiconductor layer, and the active layer to expose a portion of the first semiconductor layer;forming an insulating layer to cover an upper surface of the second electrode layer and side walls of the recesses;forming a first electrode disposed on the insulating layer and having a plurality of contact holes, each of which being electrically connected to the exposed portion of the first semiconductor layer, by depositing a conductive material on the insulating layer and within the recesses;forming a conductive substrate on the first electrode to be electrically connected to the first electrode;removing the semiconductor growth substrate from the light emitting structure;removing a portion of the light emitting structure to expose a portion of the second electrode layer at the interface between the second electrode layer and the second semiconductor layer; andforming an electrode pad on the exposed region of the second electrode layer; andforming a passivation layer disposed to cover at least a side surface of the active layer in the light emitting structure,wherein a contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of a total area of a second surface of the light emitting structure. 2. The method of claim 1, wherein a distance between central points of adjacent contact holes among the contact holes is 100 μm to 400 μm. 3. The method of claim 1, wherein the contact holes are uniformly arranged. 4. The method of claim 1, wherein the number of the contact holes is 5 to 50. 5. The method of claim 1, wherein the exposed region of the second electrode layer is formed at a corner of the semiconductor light emitting device. 6. The method of claim 1, wherein the second electrode layer reflects light generated from the active layer. 7. The method of claim 6, wherein the second electrode layer includes one selected from the group consisting of Ag and Al. 8. The method of claim 1, wherein the conductive material includes one selected from the group consisting of Au, Ni, and Cu. 9. The method of claim 1, wherein the first electrode layer has a substantially flat shape except for a region in which the contact holes are disposed. 10. The method of claim 1, wherein the second electrode layer has a substantially flat shape. 11. A method of manufacturing a semiconductor light emitting device, the method comprising: forming a light emitting structure having a first semiconductor layer, an active layer, and a second semiconductor layer sequentially grown on a semiconductor growth substrate;forming a second electrode layer on the second semiconductor layer;forming a plurality of recesses, each of which penetrating the second electrode layer, the second semiconductor layer, and the active layer to expose a portion of the first semiconductor layer;forming an insulating layer to cover an upper surface of the second electrode layer and side walls of the recesses;forming a first electrode disposed on the insulating layer and having a plurality of contact holes, each of which being electrically connected to the exposed portion of the first semiconductor layer, by depositing a conductive material on the insulating layer and within the recesses;forming a conductive substrate on the first electrode to be electrically connected to the first electrode;removing the semiconductor growth substrate from the light emitting structure;removing a portion of the light emitting structure to expose a portion of the second electrode layer at the interface between the second electrode layer and the second semiconductor layer; andforming an electrode pad on the exposed region of the second electrode layer; andforming a passivation layer disposed to cover at least a side surface of the active layer in the light emitting structure,wherein a contact area between the first electrode layer and the first semiconductor layer is 30,000 μm2 to 130,000 μm2 per 1,000,000 μm2 area of the semiconductor light emitting device. 12. The method of claim 11, wherein a contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of a total area of a second surface of the light emitting structure. 13. The method of claim 11, wherein the contact holes are uniformly arranged, and the number of the contact holes is 5 to 50.
Steigerwald, Daniel A.; Bhat, Jerome C.; Ludowise, Michael J., Contacting scheme for large and small area semiconductor light emitting flip chip devices.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Kim, YuSik, Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system.
Kim, YuSik, Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system.
Han, Kyung Taeg; Yeo, In Tae; Hahm, Hun Joo; Song, Chang Ho; Han, Seong Yeon; Na, Yoon Sung; Kim, Dae Yeon; Ahn, Ho Sik; Park, Young Sam, Light emitting diode package and fabrication method thereof.
Han, Seong Yeon; Lee, Seon Goo; Song, Chang Ho; Park, Jung Kyu; Park, Young Sam; Han, Kyung Taeg, Light emitting diode package with diffuser and method of manufacturing the same.
Kim, Yu-Sik, Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device.
Okuyama,Hiroyuki; Biwa,Goshi; Suzuki,Jun, Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
Yoo, Chul Hee; Jeong, Young June; Park, Young Sam; Han, Seong Yeon; Kim, Ho Yeon; Hahm, Hun Joo; Kim, Hyung Suk, White light emitting device and white light source module using the same.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.