초록 ▼

A package of an environmentally sensitive electronic device and a fabricating method thereof are provided, wherein the package may include a first substrate, a second substrate, the environmentally sensitive electronic device, a packaging body, and a filler. In one or more embodiments, the environme

A package of an environmentally sensitive electronic device and a fabricating method thereof are provided, wherein the package may include a first substrate, a second substrate, the environmentally sensitive electronic device, a packaging body, and a filler. In one or more embodiments, the environmentally sensitive electronic device may be disposed on the first substrate and located between the first substrate and the second substrate. The filler is disposed between the first substrate and the second substrate and covers the environmentally sensitive electronic device. The packaging body is sandwiched between the first substrate and the second substrate and encloses the environmentally sensitive electronic device and the filler. A material for the packaging body may include a bonding of transition metal and metalloid.

대표청구항 ▼

1. A package of an environmentally sensitive electronic device, comprising: a first substrate, at least part of peripheral edge of which is defined as a first encapsulation area in which there is a first packaging material;the environmentally sensitive electronic device which is formed on the first

1. A package of an environmentally sensitive electronic device, comprising: a first substrate, at least part of peripheral edge of which is defined as a first encapsulation area in which there is a first packaging material;the environmentally sensitive electronic device which is formed on the first substrate and is surrounded by the first encapsulation area;a second substrate, at least part of peripheral edge of which is defined as a second encapsulation area around the environmentally sensitive electronic device, wherein a location of the second encapsulation area corresponds to a location of the first encapsulation area, and there is a second packaging material within the second encapsulation area; anda packaging body, formed between the first encapsulation area and the second encapsulation area, and comprising a bonding layer comprising at least part of the first packaging material and at least part of the second packaging material, wherein the first packaging material and the second packaging material are in direct contact. 2. The package according to claim 1, wherein the first packaging material and the second packaging material are made of at least one element selected from a group composed of silicon, iron, chromium, oxygen, nitrogen, carbon and hydrogen. 3. The package according to claim 1, wherein the first packaging material and the second packaging material are either metalloid or transition-metal. 4. The package according to claim 1, wherein a thickness of the packaging body is in a range of 1 to 1000 nanometers. 5. The package according to claim 1, wherein the first packaging material is formed on a first metalloid layer formed on the first substrate, and the second packaging material is formed on a second metalloid layer formed on the second substrate. 6. The package according to claim 5, further comprising: a filler formed between the first substrate and the second substrate and surrounded by the packaging body. 7. The package according to claim 5, wherein the first metalloid layer and the second metalloid layer comprise at least one first metalloid film. 8. The package according to claim 7, wherein the first metalloid film is made of at least one element selected from a group composed of boron, boride, silicon, silicide, germanium, germanide, arsenic, arsenide, selenium, selenide, antimony, antimonide, polonium and polonide. 9. The package according to claim 7, wherein the first packaging material is deposited on and doped into part of the first metalloid layer, and the second packaging material is deposited on and doped into part of the second metalloid layer. 10. The package according to claim 5, wherein a thickness of the first metalloid layer and a thickness of the second metalloid layer are in a range of 0.01 to 100 micrometers. 11. A package of an environmentally sensitive electronic device, comprising: a first substrate, at least part of peripheral edge of which is defined as a first encapsulation area in which there is a first packaging material;the environmentally sensitive electronic device which is on the first substrate and is surrounded by the first encapsulation area;a second substrate, at least part of peripheral edge of which is defined as a second encapsulation area around the environmentally sensitive electronic device, wherein a location of the second encapsulation area corresponds to a location of the first encapsulation area, and there is a second packaging material within the second encapsulation area;a first sidewall barrier which is on the second substrate, is between the first encapsulation area and the second encapsulation area, and surrounds the environmentally sensitive electronic device; anda packaging body which is between the first sidewall barrier and the first substrate and comprises a bonding layer comprising at least part of the first packaging material and at least part of the second packaging material, wherein the first packaging material and the second packaging material are in direct contact. 12. The package according to claim 11, wherein the first packaging material and the second packaging material are made of at least one element selected from a group composed of silicon, iron, chromium, oxygen, nitrogen, carbon and hydrogen. 13. The package according to claim 11, wherein the first packaging material and the second packaging material are either metalloid or transition-metal. 14. The package according to claim 11, wherein a thickness of the packaging body is in a range of 1 to 1000 nanometers. 15. The package according to claim 11, wherein the first packaging material is formed on a first metalloid layer formed on the first substrate, and the second packaging material is formed on a second metalloid layer formed on the first sidewall barrier. 16. The package according to claim 15, further comprising: a filler which is between the first substrate and the second substrate and is surrounded by the first sidewall barrier. 17. The package according to claim 15, wherein the first metalloid layer and the second metalloid layer are formed by one or more first metalloid films. 18. The package according to claim 17, wherein the first metalloid film is made of at least one element selected from a group composed of boron, boride, silicon, silicide, germanium, germanide, arsenic, arsenide, selenium, selenide, antimony, antimonide, polonium and polonide. 19. The package according to claim 17, wherein the first packaging material is deposited on and doped into part of the first metalloid layer, and the second packaging material is deposited on and doped into part of the second metalloid layer. 20. The package according to claim 15, wherein a thickness of the first metalloid layer and a thickness of the second metalloid layer are in a range of 0.01 to 100 micrometers. 21. The package according to claim 11, wherein a top surface of the first sidewall barrier is planar, and the packaging body is between the top surface and the first substrate. 22. The package according to claim 11, further comprising: another first sidewall barrier which is on the first substrate and between the first encapsulation area and the second encapsulation area, wherein the first sidewall barriers concentrically surround the environmentally sensitive electronic device. 23. A package of an environmentally sensitive electronic device, comprising: a first substrate, at least part of peripheral edge of which is defined as a first encapsulation area in which there is a first packaging material;the environmentally sensitive electronic device which is on the first substrate and is surrounded by the first encapsulation area;a second substrate, at least part of peripheral edge of which is defined as a second encapsulation area and surrounds the environmentally sensitive electronic device, wherein a location of the second encapsulation area corresponds to a location of the first encapsulation area, and there is a second packaging material in the second encapsulation area;a first sidewall barrier which is on the first substrate and between the first encapsulation area and the second encapsulation area;a plurality of second sidewall barriers which are on the second substrate and between the first encapsulation area and the second encapsulation area and cooperate with the first sidewall barrier to surround the environmentally sensitive electronic device; anda packaging body which is between the first sidewall barrier and the first substrate and comprises a bonding layer comprising at least part of the first packaging material and at least part of the second packaging material, wherein the first packaging material and the second packaging material are in direct contact. 24. The package according to claim 23, wherein the first packaging material and the second packaging material are made of at least one element selected from a group composed of silicon, iron, chromium, oxygen, nitrogen, carbon and hydrogen. 25. The package according to claim 23, wherein the first packaging material and the second packaging material are either metalloid or transition-metal. 26. The package according to claim 23, wherein a thickness of the packaging body is in a range of 1 to 1000 nanometers. 27. The package according to claim 23, wherein the first packaging material is formed on a first metalloid layer formed on the first substrate, the second packaging material is formed on a second metalloid layer, and the second metalloid layer is formed on the first sidewall barrier and a second sidewall barrier. 28. The package according to claim 27, further comprising: a filler which is between the first substrate and the second substrate and is surrounded by the first sidewall barrier and the second sidewall barriers. 29. The package according to claim 27, wherein the first metalloid layer and the second metalloid layer are formed by one or more first metalloid films. 30. The package according to claim 29, wherein the first metalloid film is made of at least one element selected from a group composed of boron, boride, silicon, silicide, germanium, germanide, arsenic, arsenide, selenium, selenide, antimony, antimonide, polonium and polonide. 31. The package according to claim 29, wherein the first packaging material is deposited on and doped into part of the first metalloid layer, and the second packaging material is deposited on and doped into part of the second metalloid layer. 32. The package according to claim 27, wherein a thickness of the first metalloid layer and a thickness of the second metalloid layer are in a range of 0.01 to 100 micrometers. 33. The package according to claim 23, wherein a top surface of the first sidewall barrier is planar, and the packaging body is between the top surface and the first substrate. 34. The package according to claim 23, wherein the second sidewall barriers are at a first side of the second encapsulation area and at a second side facing to the first side, and the first substrate and the second substrate are flexible.