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Apparatus for large volume ammonothermal manufacture of gallium nitride crystals and methods of use

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B01J-019/06
  • C30B-007/10
  • C30B-035/00
출원번호 US-0656615 (2012-10-19)
등록번호 US-9724666 (2017-08-08)
발명자 / 주소
  • Rajeev, Pakalapati Tirumala
  • Pocius, Douglas W.
  • D'Evelyn, Mark P.
출원인 / 주소
  • Soraa, Inc.
대리인 / 주소
    Saul Ewing LLP
인용정보 피인용 횟수 : 1  인용 특허 : 76

초록

An apparatus to contain the reaction vessel in which gallium nitride crystals (henceforth referred to as bulk crystals) can be grown using the ammonothermal method at high pressure and temperature is disclosed. The apparatus provides adequate containment in all directions, which, for a typical cylin

대표청구항

1. An apparatus for processing material at elevated pressure, the apparatus comprising: an upper crown member;a lower crown member;an upper die restraint member;a lower die restraint member, said upper and lower die restraint members being disposed between said upper and lower crown members;one or m

이 특허에 인용된 특허 (76)

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이 특허를 인용한 특허 (1)

  1. Pakalapati, Rajeev Tirumala; D'Evelyn, Mark P., Apparatus for high pressure reaction.
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