초록 ▼

A monolithic power switch provides a semiconductor layer, a three dimensional FET formed in the semiconductor layer to modulate currents through the semiconductor layer, and a toroidal inductor with a ceramic magnetic core formed on the semiconductor layer around the FET and having a first winding c

A monolithic power switch provides a semiconductor layer, a three dimensional FET formed in the semiconductor layer to modulate currents through the semiconductor layer, and a toroidal inductor with a ceramic magnetic core formed on the semiconductor layer around the FET and having a first winding connected to the FET.

대표청구항 ▼

1. A circuit module having a semiconductor power switch, comprising: a planar first electrode;a first layer of doped semiconductor material disposed on the planar first electrode that forms ohmic contact with the planar first electrode; a second layer of doped semiconductor material disposed on the

1. A circuit module having a semiconductor power switch, comprising: a planar first electrode;a first layer of doped semiconductor material disposed on the planar first electrode that forms ohmic contact with the planar first electrode; a second layer of doped semiconductor material disposed on the first layer that is electronically patterned to form a field effect transistor (FET);a second electrode disposed upon the second layer;an elongated gate electrode located to modulate current flow from the planar first electrode through the second layer to the second electrode and having a ratio of gate electrode width to gate electrode length that is greater than or equal to 100;wherein the elongated gate electrode forms a serpentine pattern over the second layer and is insulated from the second layer and the second electrode; andwherein the elongated gate electrode comprises a conductor that forms a resonant transmission line by configuring the conductor to form the serpentine patterned elongated gate electrode that contains a capacitive element determined by charge collected beneath the elongated gate electrode, a resistive element determined by the conductor length and cross-sectional area of the conductor used to form the serpentine patterned elongated gate , and an inductive element formed by half-turns that loop the serpentine pattern back upon itself, which resonant transmission line is resonant at a frequency determined by internal capacitance and inductance. 2. The switch of claim 1, wherein the elongated gate electrode is meandered adjacent to a contiguous surface area of the second layer to maximize gate electrode width over that contiguous surface area. 3. The switch of claim 2, wherein the first layer is formed as a region of the substrate and the contiguous surface area is surrounded by a toroidal transformer having a ceramic core formed on the substrate. 4. The switch of claim 2, wherein the elongated gate electrode includes adjacent parallel gate portions. 5. The switch of claim 1, wherein the FET includes a pair of parallel elongated channel regions located beneath the elongated gate electrode. 6. The switch of claim 5, wherein the elongated gate electrode is meandered and has a gate electrode width to gate electrode length ratio that is greater than or equal to 106. 7. The switch of claim 1, wherein the first semiconductor layer is doped to form a power FET as an insulated gate bipolar transistor when making electrical contact with the second semiconductor layer.