An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor laye
An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.
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1. A semiconductor device comprising: a first wiring, a second wiring, a third wiring, a fourth wiring and a fifth wiring;a first transistor, a second transistor, a third transistor and a fourth transistor; anda first capacitor, a second capacitor, a third capacitor and a fourth capacitor,wherein th
1. A semiconductor device comprising: a first wiring, a second wiring, a third wiring, a fourth wiring and a fifth wiring;a first transistor, a second transistor, a third transistor and a fourth transistor; anda first capacitor, a second capacitor, a third capacitor and a fourth capacitor,wherein the first wiring is electrically connected to a gate of the first transistor and a gate of the second transistor,wherein the second wiring is electrically connected to a gate of the third transistor and a gate of the fourth transistor,wherein the third wiring is electrically connected to one of a source and a drain of the first transistor and one of a source and a drain of the third transistor,wherein the fourth wiring is electrically connected to one of a source and a drain of the second transistor and one of a source and a drain of the fourth transistor,wherein the other of the source and the drain of the first transistor is electrically connected to one of electrodes of the first capacitor,wherein the other of the source and the drain of the second transistor is electrically connected to one of electrodes of the second capacitor,wherein the other of the source and the drain of the third transistor is electrically connected to one of electrodes of the third capacitor,wherein the other of the source and the drain of the fourth transistor is electrically connected to one of electrodes of the fourth capacitor,wherein each of the other of the electrodes of the first capacitor, the other of the electrodes of the second capacitor, the other of the electrodes of the third capacitor and the other of the electrodes of the fourth capacitor is electrically connected to the fifth wiring,wherein each of the first transistor, the second transistor, the third transistor and the fourth transistor comprises an oxide semiconductor layer including a channel formation region and comprising oxygen, indium, zinc and a metal other than indium and zinc,wherein a value of off-state current through the oxide semiconductor layer of each of the first transistor, the second transistor, the third transistor and the fourth transistor is less than or equal to 1×10−17 A/μm when a channel length is 3 μm, voltage between the source and the drain is 1V and gate voltage is in a range of −5V to −20V. 2. The semiconductor device according to claim 1, wherein a hydrogen concentration in the oxide semiconductor layer of each of the first transistor, the second transistor, the third transistor and the fourth transistor is less than or equal to 5×1019 cm−3. 3. The semiconductor device according to claim 1, wherein a carrier concentration in the oxide semiconductor layer of each of the first transistor, the second transistor, the third transistor and the fourth transistor is less than or equal to 5×1014 cm−3. 4. The semiconductor device according to claim 1, wherein the oxide semiconductor layer is a crystalline oxide semiconductor layer. 5. A semiconductor device comprising: a first wiring, a second wiring, a third wiring, a fourth wiring and a fifth wiring;a first transistor, a second transistor, a third transistor and a fourth transistor;a first capacitor, a second capacitor, a third capacitor and a fourth capacitor; anda writing and refresh circuit,wherein the first wiring is electrically connected to a gate of the first transistor and a gate of the second transistor,wherein the second wiring is electrically connected to a gate of the third transistor and a gate of the fourth transistor,wherein the third wiring is electrically connected to one of a source and a drain of the first transistor and one of a source and a drain of the third transistor,wherein the fourth wiring is electrically connected to one of a source and a drain of the second transistor and one of a source and a drain of the fourth transistor,wherein the third wiring and the fourth wiring is electrically connected to the writing and refresh circuit,wherein the other of the source and the drain of the first transistor is electrically connected to one of electrodes of the first capacitor,wherein the other of the source and the drain of the second transistor is electrically connected to one of electrodes of the second capacitor,wherein the other of the source and the drain of the third transistor is electrically connected to one of electrodes of the third capacitor,wherein the other of the source and the drain of the fourth transistor is electrically connected to one of electrodes of the fourth capacitor,wherein each of the other of the electrodes of the first capacitor, the other of the electrodes of the second capacitor, the other of the electrodes of the third capacitor and the other of the electrodes of the fourth capacitor is electrically connected to the fifth wiring,wherein each of the first transistor, the second transistor, the third transistor and the fourth transistor comprises an oxide semiconductor layer including a channel formation region and comprising oxygen, indium, zinc and a metal other than indium and zinc,wherein a value of off-state current through the oxide semiconductor layer of each of the first transistor, the second transistor, the third transistor and the fourth transistor is less than or equal to 1×10−17 A/μm when a channel length is 3 μm, voltage between the source and the drain is 1V and gate voltage is in a range of −5V to −20V. 6. The semiconductor device according to claim 5, wherein a hydrogen concentration in the oxide semiconductor layer of each of the first transistor, the second transistor, the third transistor and the fourth transistor is less than or equal to 5×1019 cm−3. 7. The semiconductor device according to claim 5, wherein a carrier concentration in the oxide semiconductor layer of each of the first transistor, the second transistor, the third transistor and the fourth transistor is less than or equal to 5×1014 cm−3. 8. The semiconductor device according to claim 5, wherein the oxide semiconductor layer is a crystalline oxide semiconductor layer.
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