초록

Techniques relate to treating metallic interconnects of semiconductors. A metallic interconnect is formed in a layer. A metallic cap is disposed on top of the metallic interconnect. Any metallic residue, formed during the disposing of the metallic cap, is converted into insulating material.

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1. A method of treating metallic interconnects, the method comprising: forming a metallic interconnect in a layer;disposing a metallic cap on top of the metallic interconnect; andconverting a metallic residue into an insulating material, wherein the metallic residue was formed during the disposing o

1. A method of treating metallic interconnects, the method comprising: forming a metallic interconnect in a layer;disposing a metallic cap on top of the metallic interconnect; andconverting a metallic residue into an insulating material, wherein the metallic residue was formed during the disposing of the metallic cap, wherein the insulating material is a silicide or silicate that is not conductive. 2. The method of claim 1, wherein converting the metallic residue into the insulating material includes converting a surface of the metallic residue into the insulating material. 3. The method of claim 1, wherein converting the metallic residue into the insulating material includes converting an entirety of the metallic residue into the insulating material. 4. The method of claim 1, wherein converting the metallic residue into the insulating material includes converting at least one of a surface of first ones of the metallic residue into the insulating material and an entirety of second ones of the metallic residue into the insulating material. 5. The method of claim 1, wherein an outer lining of the metallic cap is converted into the insulating material. 6. The method of claim 5, wherein a conductive via is formed through the outer lining of the metallic cap to reach conductive material of the metallic cap. 7. The method of claim 1, wherein the insulating material includes a selection from at least one of an oxide and nitride. 8. A method of forming metallic interconnects, the method comprising: forming the metallic interconnects in a layer, each of the metallic interconnects being separate from one another;disposing a metallic cap on top of each of the metallic interconnects; andconverting any metallic residue, formed during the disposing of the metallic cap, into insulating material, wherein the insulating material prevents the any metallic residue from being conductive, thereby avoiding electrical connection between the metallic interconnects, wherein the insulating material is a silicide or silicate that is not conductive. 9. The method of claim 8, wherein converting the any metallic residue into the insulating material includes converting a surface of the metallic residue into the insulating material. 10. The method of claim 8, wherein converting the any metallic residue into the insulating material includes converting an entirety of the metallic residue into the insulating material. 11. The method of claim 8, wherein converting the any metallic residue into the insulating material includes converting at least one of a surface of first ones of the metallic residue into the insulating material and an entirety of second ones of the metallic residue into the insulating material.