A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type that is positioned on the substrate, a first field region of the first conductive type that is positioned on the substrate to be
A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type that is positioned on the substrate, a first field region of the first conductive type that is positioned on the substrate to be separated from the emitter region, a first electrode electrically connected to the emitter region, a second electrode electrically connected to the first field region, and an insulating region positioned on at least one of the emitter region and the first field region.
대표청구항▼
1. A solar cell, comprising: a crystalline semiconductor substrate of a first conductive type and having a flat rear surface;a passivation layer positioned directly on the flat rear surface of the substrate;an emitter region of a second conductive type opposite the first conductive type that is posi
1. A solar cell, comprising: a crystalline semiconductor substrate of a first conductive type and having a flat rear surface;a passivation layer positioned directly on the flat rear surface of the substrate;an emitter region of a second conductive type opposite the first conductive type that is positioned directly on the passivation layer;a first field region of the first conductive type that is positioned directly on the passivation layer to be separated from the emitter region;an insulating region including a first portion directly positioned on the flat rear surface of the substrate and a second portion directly positioned on a rear surface of at least one of the emitter region and the first field region, and the insulating region being formed of a non-conductive material;a first electrode positioned on the emitter region and electrically connected to the emitter region; anda second electrode positioned on the first field region and electrically connected to the first field region,wherein the passivation layer has a thickness of 1 nm to 10 nm and a hole or electron is moved through the passivation layer, the passivation layer is formed of at least one of silicon oxide (SiOx) and silicon nitride (SiNx), and the passivation layer includes a first portion positioned between the substrate and the first field region and a second portion positioned between the substrate and the emitter region,the first portion and the second portion of the passivation layer are spatially separated from each other to expose the flat rear surface of the substrate,the first field region directly contacts the first portion of the passivation layer,the emitter region directly contacts the second portion of the passivation layer, andthe first portion of the insulating region directly contacts the flat rear surface of the substrate exposed between the first portion and the second portion of the passivation layer. 2. The solar cell of claim 1, wherein when the insulating region is directly positioned on the rear surface of the first field region, the insulating region is also positioned on an edge of the first field region. 3. The solar cell of claim 1, wherein when the insulating region is directly positioned on the rear surface of the first field region, the insulating region has at least one opening exposing a portion of the first field region. 4. The solar cell of claim 1, wherein the emitter region includes a first portion positioned at a first height and a second portion positioned at a second height greater than the first height. 5. The solar cell of claim 4, wherein when the insulating region is positioned on the rear surface of the emitter region, the insulating region is positioned on the first portion of the emitter region. 6. The solar cell of claim 5, wherein the insulating region has at least one opening exposing a portion of the first portion of the emitter region. 7. The solar cell of claim 1, wherein the passivation layer is positioned on a surface of the substrate, the surface being opposite an incident surface of the substrate on which light is incident. 8. The solar cell of claim 1, wherein the first field region is formed of a non-crystalline semiconductor. 9. A solar cell, comprising: a crystalline semiconductor substrate of a first conductive type, having a rear surface and an exposed portion of the rear surface;a front surface field region of the first conductive type positioned on a front surface of the substrate;an anti-reflection layer positioned on the front surface field region;a passivation layer positioned directly on the rear surface of the substrate;an emitter region of a second conductive type opposite the first conductive type that is positioned directly on the passivation layer;a back surface field region of the first conductive type that is positioned directly on the passivation layer to be separated from the emitter region;an insulating region including a first portion and a second portion, the first portion being directly positioned on the exposed portion of the rear surface and the second portion being directly positioned on a rear surface of at least one of the emitter region and the back surface field region, and the insulating region being formed of a non-conductive material;a first electrode positioned on the emitter region and electrically connected to the emitter region; anda second electrode positioned on the back surface field region and electrically connected to the back surface field region,wherein the passivation layer has a thickness of 1 nm to 10 nm and a hole or electron is moved through the passivation layer, the passivation layer is formed of at least one of silicon oxide (SiOx) and silicon nitride (SiNx), and the passivation layer includes a first portion positioned between the rear surface of the substrate and the back surface field region and a second portion positioned between the rear surface of the substrate and the emitter region,the first portion and the second portion of the passivation layer are spatially separated from each other by the first portion of the insulation region at the exposed portion of the rear surface,the back surface field region directly contacts the first portion of the passivation layer,the emitter region directly contacts the second portion of the passivation layer, andthe first portion of the insulating region directly contacts the exposed portion of the rear surface between the first portion and the second portion of the passivation layer. 10. The solar cell of claim 9, wherein the anti-reflection layer includes at least one of SiNx, SiOx, SiNx:H or SiOx:H. 11. The solar cell of claim 9, wherein the front surface of the substrate has a textured surface. 12. The solar cell of claim 11, wherein a roughness of the front surface of the substrate is greater than a roughness of the rear surface. 13. The solar cell of claim 9, wherein when the insulating region is directly positioned on the back surface field region, the insulating region is positioned on an edge of the back surface field region. 14. The solar cell of claim 9, wherein when the insulating region is directly positioned on the back surface field region, the insulating region has at least one opening exposing a portion of the back surface field region. 15. The solar cell of claim 9, wherein the emitter region includes a first portion positioned at a first height and a second portion positioned at a second height greater than the first height. 16. The solar cell of claim 9, wherein when the insulating region is positioned on the emitter region, the insulating region is positioned on an edge of the emitter region. 17. The solar cell of claim 16, wherein the insulating region has at least one opening exposing a portion of the emitter region. 18. The solar cell of claim 9, wherein the back surface field region is formed of a non-crystalline semiconductor. 19. The solar cell of claim 18, wherein the emitter region is formed of a different semiconductor material from that of the substrate. 20. The solar cell of claim 19, wherein the emitter region is formed of a non-crystalline semiconductor. 21. The solar cell of claim 20, wherein the emitter region and the substrate form a hetero junction and a pn junction between them. 22. The solar cell of claim 20, wherein the emitter region is formed of amorphous silicon. 23. The solar cell of claim 9, wherein the crystalline semiconductor substrate of a first conductive type is n-type. 24. The solar cell of claim 9, wherein the front surface field region has the same conductive type as the substrate and is more heavily doped with impurities than the substrate. 25. The solar cell of claim 9, wherein the front surface field region is formed of amorphous silicon. 26. The solar cell of claim 9, wherein the front surface field region is formed of polycrystalline silicon. 27. The solar cell of claim 9, wherein the front surface field region is formed of single crystalline silicon. 28. The solar cell of claim 10, wherein the anti-reflection layer is formed of a single layer. 29. The solar cell of claim 9, further comprising a front passivation layer positioned on the front surface of the substrate. 30. The solar cell of claim 29, wherein the front passivation layer has at least one of amorphous silicon, silicon oxide (SiOx) and silicon nitride (SiNx). 31. The solar cell of claim 9, wherein a thickness of the passivation layer positioned between the emitter region and the rear surface of the substrate equals a thickness of the passivation layer positioned between the back surface field region and the rear surface of the substrate. 32. The solar cell of claim 9, further comprising a first auxiliary electrode positioned between the first electrode and the emitter region. 33. The solar cell of claim 32, further comprising a second auxiliary electrode positioned between the second electrode and the back surface field region. 34. The solar cell of claim 33, wherein the first and second auxiliary electrodes are formed of a transparent conductive material having conductivity. 35. The solar cell of claim 34, wherein the transparent conductive material includes at least one selected from ITO, ZnO, SnO2, TCO or a combination thereof. 36. The solar cell of claim 34, wherein the transparent conductive material is doped with at least one of aluminum (Al), germanium (Ge), gallium (Ga), and iron (Fe). 37. The solar cell of claim 9, wherein each of the first electrode or the second electrode has a portion directly contacted with the emitter region or the back surface field region and another portion positioned on the second portion of the insulating region. 38. The solar cell of claim 9, wherein impurities doped in the front surface field region are the same as impurities doped in the back surface field region. 39. The solar cell of claim 9, wherein, in the first electrode or the second electrode, a thickness of a portion directly contacted with the emitter region or the back surface field region is greater than a thickness of another portion positioned on the second portion of the insulating region. 40. The solar cell of claim 9, wherein the first electrode or the second electrode is formed of at least one conductive material selected from the group consisting of nickel (Ni), copper (Cu), silver (Ag), aluminum (Al), tin (Sn), zinc (Zn), indium (In), titanium (Ti), gold (Au), or a combination thereof. 41. The solar cell of claim 9, wherein the insulating region includes a first insulating layer and a second insulating layer positioned on the first insulating layer. 42. The solar cell of claim 41, wherein a thickness of the second insulating layer is less than a thickness of the first insulating layer. 43. The solar cell of claim 14, wherein the at least one opening has a stripe shape or an island shape. 44. The solar cell of claim 17, wherein the at least one opening has a stripe shape or an island shape. 45. The solar cell of claim 14, wherein the first electrode or the second electrode directly contacts the emitter region or the back surface field region through the at least one opening. 46. The solar cell of claim 17, wherein the first electrode or the second electrode directly contacts the emitter region or the back surface field region through the at least one opening. 47. A solar cell, comprising: a crystalline semiconductor substrate of a first conductive type and having a rear surface and an exposed portion of the rear surface;a front surface field region of the first conductive type positioned on a front surface of the substrate;an anti-reflection layer positioned on the front surface field region;a passivation layer positioned directly on the rear surface of on the substrate;an emitter region of a second conductive type opposite the first conductive type that is positioned directly on the passivation layer;a back surface field region of the first conductive type that is positioned directly on the passivation layer to be separated from the emitter region;an insulating region including a first portion and a second portion, the first portion being directly positioned on the exposed portion of the rear surface and the second portion being directly positioned on a rear surface of at least one of the emitter region and the back surface field region, the insulating region being formed of a non-conductive material, and a width of the first portion being narrower than the second portion;a first electrode positioned on the emitter region and electrically connected to the emitter region; anda second electrode positioned on the back surface field region and electrically connected to the back surface field region,wherein the passivation layer has a thickness of 1 nm to 10 nm and a hole or electron is moved through the passivation layer, the passivation layer is formed of at least one of silicon oxide (SiOx) and silicon nitride (SiNx), and the passivation layer includes a first portion positioned between the substrate and the back surface field region and a second portion positioned between the substrate and the emitter region,the first portion and the second portion of the passivation layer are spatially separated from each other by the first portion of the insulation region at the exposed portion of the rear surface,the back surface field region directly contacts the first portion of the passivation layer,the emitter region directly contacts the second portion of the passivation layer, andthe first portion of the insulating region directly contacts the exposed portion of the rear surface between the first portion and the second portion of the passivation layer. 48. The solar cell of claim 10, wherein the anti-reflection layer is formed of multiple layers.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (5)
Swanson,Richard M., Back side contact solar cell with doped polysilicon regions.
Mulligan,William P.; Cudzinovic,Michael J.; Pass,Thomas; Smith,David; Kaminar,Neil; McIntosh,Keith; Swanson,Richard M., Solar cell and method of manufacture.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.