최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0898155 (2013-05-20) |
등록번호 | US-9754878 (2017-09-05) |
발명자 / 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 | 피인용 횟수 : 1 인용 특허 : 551 |
A plurality of regular wires are formed within a given chip level, each having a linear-shape with a length extending in a first direction and a width extending in a second direction perpendicular to the first direction. The plurality of regular wires are positioned according to a fixed pitch such t
A plurality of regular wires are formed within a given chip level, each having a linear-shape with a length extending in a first direction and a width extending in a second direction perpendicular to the first direction. The plurality of regular wires are positioned according to a fixed pitch such that a distance as measured in the second direction between lengthwise centerlines of any two regular wires is an integer multiple of the fixed pitch. At least one irregular wire is formed within the given chip level and within a region bounded by the plurality of regular wires. Each irregular wire has a linear-shape with a length extending in the first direction and a width extending in the second direction. A distance as measured in the second direction between lengthwise centerlines of any irregular wire and any regular wire is not equal to an integer multiple of the fixed pitch.
1. A semiconductor chip including a chip level based on a layout that includes both regular and irregular wires, comprising: a plurality of regular wires formed within a given chip level, each of the plurality of regular wires having a linear-shape with an end-to-end length measured in a first direc
1. A semiconductor chip including a chip level based on a layout that includes both regular and irregular wires, comprising: a plurality of regular wires formed within a given chip level, each of the plurality of regular wires having a linear-shape with an end-to-end length measured in a first direction substantially parallel to an underlying substrate and a side-to-side width measured in a second direction substantially parallel to the underlying substrate, the second direction perpendicular to the first direction, the plurality of regular wires positioned according to a constant pitch such that a distance as measured in the second direction between lengthwise centerlines of any two of the plurality of regular wires is an integer multiple of the constant pitch; andat least one irregular wire formed within the given chip level and within a region bounded by the plurality of regular wires, the at least one irregular wire having a linear-shape with an end-to-end length measured in the first direction and a side-to-side width measured in the second direction, wherein a distance as measured in the second direction between a lengthwise centerline of the at least one irregular wire and any one of the plurality of regular wires is not equal to an integer multiple of the constant pitch. 2. The semiconductor chip as recited in claim 1, wherein the side-to-side width of the at least one irregular wire is greater than the side-to-side width of any of the plurality of regular wires. 3. The semiconductor chip as recited in claim 1, wherein the side-to-side width of the at least one irregular wire is greater than the constant pitch. 4. The semiconductor chip as recited in claim 1, wherein the at least one irregular wire includes a plurality of irregular wires. 5. The semiconductor chip as recited in claim 4, wherein each of the plurality of irregular wires has a substantially equal side-to-side width. 6. The semiconductor chip as recited in claim 4, wherein some of the plurality of irregular wires have different side-to-side widths. 7. The semiconductor chip as recited in claim 4, wherein the plurality of irregular wires are positioned according to a second constant pitch such that a distance as measured in the second direction between lengthwise centerlines of any two of the plurality of irregular wires is an integer multiple of the second constant pitch. 8. The semiconductor chip as recited in claim 4, wherein the plurality of irregular wires consists of a first portion and a second portion, each of the first portion and the second portion including multiple ones of the plurality of irregular wires, wherein the first portion of the plurality of irregular wires are positioned according to a second constant pitch such that a distance as measured in the second direction between lengthwise centerlines of any two of the first portion of the plurality of irregular wires is an integer multiple of the second constant pitch, andwherein the second portion of the plurality of irregular wires are positioned according to a third constant pitch such that a distance as measured in the second direction between lengthwise centerlines of any two of the second portion of the plurality of irregular wires is an integer multiple of the third constant pitch. 9. The semiconductor chip as recited in claim 4, wherein a substantially uniform spacing as measured in the first direction exists between adjacently positioned regular and irregular wires. 10. The semiconductor chip as recited in claim 9, wherein a substantially uniform spacing as measured in the second direction exists between adjacently positioned regular and irregular wires. 11. The semiconductor chip as recited in claim 4, wherein a substantially uniform spacing as measured in the second direction exists between adjacently positioned regular and irregular wires. 12. A semiconductor chip including a chip level based on a layout that includes both regular and irregular wires, comprising: a plurality of regular wires formed within a given chip level, each of the plurality of regular wires having a linear-shape with an end-to-end length measured in a first direction substantially parallel to an underlying substrate and a side-to-side width measured in a second direction substantially parallel to the underlying substrate, the second direction perpendicular to the first direction, the plurality of regular wires positioned according to a constant pitch such that a distance as measured in the second direction between lengthwise centerlines of any two of the plurality of regular wires is an integer multiple of the constant pitch, each of the plurality of regular wires having a constant side-to-side width as measured in the second direction; andat least one irregular wire formed within the given chip level and within a region bounded by the plurality of regular wires, the at least one irregular wire having a linear-shape with an end-to-end length measured in the first direction and a side-to-side width measured in the second direction, the side-to-side width of the at least one irregular wire being direction different than the side-to-side width of the plurality of regular wires as measured in the second direction. 13. The semiconductor chip as recited in claim 12, wherein the side-to-side width of the at least one irregular wire is at least two times the constant side-to-side width of the plurality of regular wires as measured in the second direction. 14. The semiconductor chip as recited in claim 12, wherein the side-to-side width of the at least one irregular wire is greater than the constant pitch. 15. The semiconductor chip as recited in claim 12, wherein the side-to-side width of the at least one irregular wire is less than the constant side-to-side width of the plurality of regular wires as measured in the second direction. 16. The semiconductor chip as recited in claim 12, wherein the at least one irregular wire includes a plurality of irregular wires. 17. The semiconductor chip as recited in claim 16, wherein each of the plurality of irregular wires has a substantially equal side-to-side width. 18. The semiconductor chip as recited in claim 16, wherein some of the plurality of irregular wires have different side-to-side widths as measured in the second direction. 19. The semiconductor chip as recited in claim 16, wherein the plurality of irregular wires are positioned according to a second constant pitch such that a distance as measured in the second direction between lengthwise centerlines of any two of the plurality of irregular wires is an integer multiple of the second constant pitch. 20. The semiconductor chip as recited in claim 16, wherein a substantially uniform spacing as measured in the first direction exists between adjacently positioned regular and irregular wires. 21. The semiconductor chip as recited in claim 20, wherein a substantially uniform spacing as measured in the second direction exists between adjacently positioned regular and irregular wires. 22. The semiconductor chip as recited in claim 16, wherein a substantially uniform spacing as measured in the second direction exists between adjacently positioned regular and irregular wires.
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