According to one embodiment, a semiconductor photoreceiving device includes a substrate, a first structural layer provided on the substrate, in which light enters from the substrate side and in which a refractive index changes periodically, a semiconductor layer provided on the first structural laye
According to one embodiment, a semiconductor photoreceiving device includes a substrate, a first structural layer provided on the substrate, in which light enters from the substrate side and in which a refractive index changes periodically, a semiconductor layer provided on the first structural layer and including an optical absorption layer, a reflective layer provided on the semiconductor layer, and a pair of electrodes configured to apply voltage to the optical absorption layer.
대표청구항▼
1. A semiconductor photoreceiving device comprising: a substrate;a first structural layer provided on the substrate, in which light enters from the substrate side and in which a refractive index changes periodically;a semiconductor layer provided on the first structural layer and including an optica
1. A semiconductor photoreceiving device comprising: a substrate;a first structural layer provided on the substrate, in which light enters from the substrate side and in which a refractive index changes periodically;a semiconductor layer provided on the first structural layer and including an optical absorption layer;a reflective layer provided on the semiconductor layer; anda pair of electrodes configured to apply voltage to the optical absorption layer,wherein the semiconductor layer is made from a group III-V compound semiconductor and having a multi-layer structure,wherein the multi-layer structure comprises a first contact layer provided on the first structural layer, a first cladding layer provided on the first contact layer, a first light confinement layer provided on the first cladding layer, a multi-quantum well layer as the optical absorption layer provided on the first light confinement layer, a second light confinement layer provided on the multi-quantum well layer, a second cladding layer provided on the second light confinement layer and a second contact layer provided on the second cladding layer,wherein a first region consisting of the first contact layer, the first cladding layer and the first light confinement layer and a second region consisting of the second light confinement layer, the second cladding layer and the second contact layer have different conductivity types each other,wherein the first contact layer is connected with one of the pair of the electrodes, andwherein the second contact layer is connected with another of the pair of the electrodes. 2. The device of claim 1, wherein the reflective layer is a metal mirror. 3. The device of claim 1, wherein the reflective layer includes a multilayer reflective film. 4. The device of claim 1, wherein the reflective layer comprises a multilayer reflective film and a metal mirror, the multilayer reflective film and the metal mirror being provided in this order on the semiconductor layer. 5. The device of claim 1, wherein the reflective layer comprises a second structural layer in which the refractive index changes periodically and a metal mirror, the second structural layer and the metal mirror being provided in this order on the semiconductor layer. 6. The device of claim 5, wherein the first and second structural layers are of photonic crystals. 7. The device of claim 5, wherein the first and second structural layers have periods of changes in refractive index different from each other. 8. The device of claim 2, wherein one of the pair of electrodes covers at least a part of the semiconductor layer and functions also as the metal mirror. 9. A semiconductor photoreceiving device comprising: a substrate;a first structural layer provided on the substrate, in which light enters from the substrate side and in which a refractive index changes periodically;a semiconductor layer provided on the first structural layer and including an optical absorption layer;a reflective layer provided on the semiconductor layer; anda pair of electrodes configured to apply voltage to the optical absorption layer,wherein the reflective layer comprises a multilayer reflective film and a metal mirror, the multilayer reflective film and the metal mirror being provided in this order on the semiconductor layer. 10. The device of claim 9, wherein the semiconductor layer is made from a group III-V compound semiconductor. 11. The device of claim 9, wherein the semiconductor layer has a multi-layer structure. 12. The device of claim 9, wherein one of the pair of electrodes covers at least a part of the semiconductor layer, and the one of the electrodes functions also as the metal mirror. 13. A semiconductor photoreceiving device comprising: a substrate;a first structural layer provided on the substrate, in which light enters from the substrate side and in which a refractive index changes periodically;a semiconductor layer provided on the first structural layer and including an optical absorption layer;a reflective layer provided on the semiconductor layer; anda pair of electrodes configured to apply voltage to the optical absorption layer,wherein the reflective layer comprises a second structural layer in which the refractive index changes periodically and a metal mirror, the second structural layer and the metal mirror being provided in this order on the semiconductor layer. 14. The device of claim 13, wherein the semiconductor layer is made from a group III-V compound semiconductor. 15. The device of claim 13, wherein the semiconductor layer has a multi-layer structure. 16. The device of claim 13, wherein the first and second structural layers are of photonic crystals. 17. The device of claim 13, wherein the first and second structural layers have periods of changes in refractive index different from each other. 18. The device of claim 13, wherein one of the pair of electrodes covers at least a part of the semiconductor layer, and the one of the electrodes functions also as the metal mirror.
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