IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0455817
(2014-08-08)
|
등록번호 |
US-9755143
(2017-09-05)
|
발명자
/ 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
Amin, Turocy & Watson, LLP
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
138 |
초록
▼
A switching device includes a first dielectric material formed overlying a substrate. A bottom wiring material and a switching material are sequentially formed overlying the first dielectric material. The bottom wiring material and the switching material are patterned and etched to form a first stru
A switching device includes a first dielectric material formed overlying a substrate. A bottom wiring material and a switching material are sequentially formed overlying the first dielectric material. The bottom wiring material and the switching material are patterned and etched to form a first structure having a top surface region and a side region. The first structure includes a bottom wiring structure and a switching element having the top surface region including an exposed region. A second dielectric material is formed overlying the first structure. A first opening region is formed in a portion of the second dielectric layer to expose a portion of the top surface region. A dielectric side wall structure is formed overlying a side region of the first opening region. A top wiring material including a conductive material is formed overlying the top surface region to be directly contact with the switching element.
대표청구항
▼
1. A switching device, comprising: a structure comprising a switching material, the structure overlies a first wiring structure and has a top region and a side region, the top region comprises a surface of the switching material;a dielectric layer that defines an opening and overlies the structure,
1. A switching device, comprising: a structure comprising a switching material, the structure overlies a first wiring structure and has a top region and a side region, the top region comprises a surface of the switching material;a dielectric layer that defines an opening and overlies the structure, the dielectric layer comprises a first dielectric material;a spacer structure disposed within the opening and in contact with a surface of the dielectric layer and a first portion of the surface of the switching material, the spacer structure defines a second opening and comprises a second dielectric material, the second opening exposes a second portion of the surface of the switching material, the first portion having larger surface area than the second portion;a conductive material that overlies the spacer structure and covers a portion of the second opening, the conductive material is in contact with the second portion of the surface of the switching material; anda second wiring structure that overlies the conductive material. 2. The switching device of claim 1, wherein the second portion of the surface of the switching material defines an active device area having dimensions of less than about 50 nm by 50 nm. 3. The switching device of claim 1, wherein the switching material is configured to allow formation of a conductive filament structure therein in response to application of a voltage to one of the first wiring structure or the second wiring structure. 4. The switching device of claim 3, wherein the conductive material is a source of metal particles for the conductive filament structure. 5. The switching device of claim 1, wherein the switching material comprises amorphous silicon having a thickness ranging from about 100 Å to about 500 Å. 6. The switching device of claim 1, wherein the conductive material comprises silver having a thickness ranging from about 50 Å to about 2000 Å. 7. The switching device of claim 1, wherein the conductive material comprises a metal selected from a group consisting of silver, gold, platinum, palladium, titanium, nickel, copper, a gold-palladium-silver alloy, a gold-palladium-copper alloy, and gold-palladium alloy, a silver-palladium alloy, and a metal alloy. 8. The switching device of claim 1, wherein the first wiring structure is spatially arranged at an angle with respect to the second wiring structure. 9. The switching device of claim 1, wherein the first dielectric material comprises silicon nitride, silicon oxide, or a dielectric stack including a silicon oxide on silicon nitride on silicon oxide (ONO) stack. 10. The switching device of claim 1, wherein the second dielectric material comprises silicon nitride, silicon oxide, or a dielectric stack including a silicon oxide on silicon nitride on silicon oxide (ONO) stack. 11. The switching device of claim 1wherein a conductive filament structure is formed within a plurality of defect regions in the switching material; andwherein the conductive filament structure consists of metal particles from the conductive material. 12. The switching device of claim 11 wherein the switching material comprises undoped silicon-containing material. 13. The switching device of claim 1wherein the first wiring structure comprises a conductive metal layer comprising a material selected from a group consisting of: aluminum, tungsten, and copper; andwherein the structure also comprises a barrier material selected from a group consisting of: titanium, titanium nitride, tantalum, tantalum nitride, tungsten, tungsten nitride, a metal nitride. 14. The switching device of claim 13 wherein the barrier layer is disposed in between and in contact with the switching material and the first wiring structure. 15. The method of claim 13 wherein the switching material comprises undoped silicon-containing material. 16. A method, comprising: forming a structure comprising a switching material, the structure overlying a first wiring structure and having a top region and a side region, the top region comprises a surface of the switching material;depositing a first dielectric layer onto the structure, the first dielectric layer covers the surface of the switching material and comprises a first dielectric material;forming an opening in the first dielectric layer, the opening exposes a first portion of the surface of the switching material;depositing a second dielectric layer onto the first dielectric layer, the second dielectric layer fills a portion of the opening and comprises a second dielectric material;forming a second opening in the second dielectric layer, the second opening exposes a second portion of the surface of the switching material smaller than the first portion, a portion of the second dielectric layer in proximity to the second opening defines a spacer structure in contact with a surface of the first dielectric layer and a third portion of the surface of the switching material;covering a surface of the spacer structure and the second portion of the surface of the switching material with a conductive material; andforming a second wiring structure comprising the conductive material. 17. The method of claim 16, wherein the second portion of the surface of the switching material defines an active switching-device area having dimensions of less than about 50 nm by 50 nm. 18. The method of claim 16, wherein the first dielectric layer comprises silicon dioxide, and wherein depositing the first dielectric layer onto the structure comprises depositing the silicon dioxide via a plasma enhanced chemical vapor deposition process. 19. The method of claim 16, wherein the first dielectric layer comprises silicon dioxide, and wherein forming the opening in the first dielectric layer comprises dry etching the silicon dioxide. 20. The method of claim 16, wherein depositing a second dielectric layer onto the first dielectric layer comprises conformably depositing one of silicon nitride, silicon oxide, or a silicon oxide on silicon nitride on silicon oxide (ONO) stack onto the first dielectric layer. 21. The method of claim 16, wherein forming the second opening in the second dielectric layer comprises removing a portion of the second dielectric layer via an anisotropic etching process. 22. The method of claim 16, wherein forming the structure comprises: forming the first wiring structure;depositing a barrier material onto the first wiring structure;depositing a contact material onto the barrier material;depositing the switching material onto the contact material; anddirectionally etching the switching material, the contact material, and the barrier material. 23. The method of claim 22, wherein depositing the switching material comprises depositing an amorphous silicon layer having a thickness ranging from about 100 Å to about 500 Å. 24. The method of claim 16, wherein the covering comprises covering surface of the spacer structure and the second portion of the surface of the switching material with a silver layer having thickness ranging from about 50 Å to about 2000 Å. 25. The method of claim 16, wherein forming the second wiring structure comprises spatially arranging the second wiring structure at an angle with respect to the second wiring structure. 26. The method of claim 16, wherein the conductive material comprises a metal selected from a group consisting of silver, gold, platinum, palladium, nickel titanium, copper, a gold-palladium-silver alloy, a gold-palladium-copper alloy, and gold-palladium alloy, a silver-palladium alloy, and a metal alloy. 27. The method of claim 16 wherein forming the structure comprises depositing the switching material using a chemical vapor deposition process. 28. The method of claim 16wherein the first wiring structure comprises a material selected from a group consisting of: aluminum, tungsten, and copper; andwherein forming the structure comprises: depositing a barrier material onto the first wiring structure, wherein the barrier layer comprises a material selected from a group consisting of: titanium, titanium nitride, tantalum, tantalum nitride, tungsten, tungsten nitride, a metal nitride; and depositing the switching material onto the barrier material.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.