초록 ▼

The invention stems from the realization that it is possible to control the electric field in the gate region of a field effect transistor (MOS, FET etc.) without changing the net charge of the gate electrode or without resorting to electrical conduction. According to an aspect of the invention, the

The invention stems from the realization that it is possible to control the electric field in the gate region of a field effect transistor (MOS, FET etc.) without changing the net charge of the gate electrode or without resorting to electrical conduction. According to an aspect of the invention, the electric field is changed by modifying the charge distribution within the gate electrode without materially adding or subtracting charge carriers to it or changing its net charge. This is achieved by displacing one or more sources of electric field, for example free charges, or conductive or non-conductive surface charges in the proximity of the gate electrode. By electric induction, the electric field produce a separation of charges in the gate electrode and an alteration in the conduction state of the FET transistor.

대표청구항 ▼

1. A device for controlling a Field Effect Transistor, the device comprising an evacuated vessel having first and second extremities, preloaded with charge carriers creating free charges and having walls on which the free charges can scatter at least partially elastically, the first extremity being

1. A device for controlling a Field Effect Transistor, the device comprising an evacuated vessel having first and second extremities, preloaded with charge carriers creating free charges and having walls on which the free charges can scatter at least partially elastically, the first extremity being operable as a chargeable element by which said device faces a gate region of the Field Effect Transistor being spaced from and located in proximity of the gate region, and the second extremity having transmitter means configured and operable to accelerate the free charges in said evacuated vessel towards the first extremity, effecting a change of an electric field in said space between the first extremity and the gate region causing separation of charges in the gate region by electric field induction and modification of the charge distribution in the channel of the transistor, thereby modifying a conduction state of the transistor in a contactless manner. 2. The device of claim 1, wherein the charge carriers are electrons and the evacuated vessel has the walls exhibiting negative electron affinity of 1.5 eV or higher, applied between the free charges and the walls. 3. The device of claim 1, wherein the evacuated vessel comprise polyethylene or parylene or SiO2 applied between the free charges and the walls. 4. An electronic device comprising: a Field Effect Transistor comprising source and drain electrodes with a channel between them, and a gate region; and a controller configured and operable to controllably vary conduction state of the transistor, whereinthe controller is spaced-apart from the gate region, and has a chargeable element by which it faces the gate region and which is located in a proximity of the gate region, such that a charge on said chargeable element creates an electric field in a space between the chargeable element and the gate region, causing separation of charges in the gate region by electric field induction and modification of the charge distribution in the channel of the transistor, thereby controlling alteration in a conduction state of the transistor. 5. The electronic device of claim 4, wherein said controller comprises an evacuated vessel having first and second extremities, preloaded with free charges and having walls on which the free charges can scatter at least partially elastically, the first extremity operating as the chargeable element spaced from and in proximity of the gate region, and the second extremity being configured and operable, by an electric circuit, to accelerate the free charges in said evacuated vessel towards the first extremity, such that the free charges affect a change in the electric field in said space between the first extremity and the gate region and modify the conduction state of the transistor.