One embodiment of the present invention provides a method for fabricating solar cells. During operation, an anti-reflection layer is deposited on top of a semiconductor structure to form a photovoltaic structure, and a front-side electrode grid comprising a metal stack is formed on top of the photov
One embodiment of the present invention provides a method for fabricating solar cells. During operation, an anti-reflection layer is deposited on top of a semiconductor structure to form a photovoltaic structure, and a front-side electrode grid comprising a metal stack is formed on top of the photovoltaic structure. The metal stack comprises a metal-adhesive layer comprising Ti or Ta, and a conducting layer comprising Cu or Ag situated above the metal-adhesive layer.
대표청구항▼
1. A solar cell, comprising: a semiconductor photovoltaic structure comprising an emitter layer positioned on a base layer; anda first metallic grid positioned on a front side of the photovoltaic structure, wherein the first metallic grid includes: a metal-adhesive layer which comprises Ta and is in
1. A solar cell, comprising: a semiconductor photovoltaic structure comprising an emitter layer positioned on a base layer; anda first metallic grid positioned on a front side of the photovoltaic structure, wherein the first metallic grid includes: a metal-adhesive layer which comprises Ta and is in direct contact with the emitter layer;a Cu seed layer positioned on the metal-adhesive layer; andan electroplated Cu layer positioned on the Cu seed layer. 2. The solar cell of claim 1, wherein the metal-adhesive layer further comprises one or more of: Ti, Co, W, Cr, Mo, Ni, titanium nitride (TiNx), titanium tungsten (TiWx), titanium silicide (TiSix), titanium silicon nitride (TiSiN), tantalum nitride (TaNx), tantalum silicon nitride (TaSiNx), nickel vanadium (NiV), tungsten nitride (WNx), and their combinations. 3. The solar cell of claim 1, wherein the first metallic grid further comprises a soldering layer comprising Sn or Ag positioned on the electroplated Cu layer. 4. The solar cell of claim 1, wherein the metal-adhesive layer has a thickness between 1 nm and 1000 nm. 5. The solar cell of claim 4, wherein the metal-adhesive layer has a thickness between 5 nm and 50 nm. 6. The solar cell of claim 1, wherein the photovoltaic structure further comprises an anti-reflection layer positioned on the emitter layer. 7. The solar cell of claim 6, wherein the anti-reflection layer is electrically insulating, and wherein the anti-reflection layer includes a number of openings, through which the metal-adhesive layer is in direct contact with the emitter layer. 8. The solar cell of claim 7, wherein the insulating anti-reflection layer includes at least one of: silicon nitride (SiNx);silicon oxide (SiOx);titanium oxide (TiOx); andaluminum oxide. 9. The solar cell of claim 6, wherein the anti-reflection layer includes a transparent conducting oxide (TCO) layer, and wherein the metal adhesive layer is in contact with the TCO layer. 10. The solar cell of claim 9, wherein the TCO layer includes at least one of: indium tin oxide (ITO);aluminum zinc oxide (AZO);gallium zinc oxide (GZO); andtungsten doped indium oxide (IWO). 11. The solar cell of claim 1, wherein the Cu seed layer has a thickness between 5 nm and 500 nm. 12. The solar cell of claim 1, wherein the metal adhesive layer and the Cu seed layer are formed using a physical vapor deposition technique. 13. The solar cell of claim 12, wherein the physical vapor deposition technique includes one of: evaporation and sputtering deposition.
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