Primary voltaic sources including nanofiber Schottky barrier arrays and methods of forming same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G21H-001/06
H01L-029/66
H01L-029/06
B82Y-015/00
H01L-029/47
출원번호
US-0943993
(2013-07-17)
등록번호
US-9779845
(2017-10-03)
발명자
/ 주소
Noyes, Dallas B.
출원인 / 주소
Seerstone LLC
대리인 / 주소
TraskBritt P.C.
인용정보
피인용 횟수 :
0인용 특허 :
204
초록▼
Primary voltaic sources include nanofiber Schottky barrier arrays and a radioactive source including at least one radioactive element configured to emit radioactive particles. The arrays have a semiconductor component and a metallic component joined at a metal-semiconductor junction. The radioactive
Primary voltaic sources include nanofiber Schottky barrier arrays and a radioactive source including at least one radioactive element configured to emit radioactive particles. The arrays have a semiconductor component and a metallic component joined at a metal-semiconductor junction. The radioactive source is positioned proximate to the arrays such that at least a portion of the radioactive particles impinge on the arrays to produce a flow of electrons across the metal-semiconductor junction. Methods of producing voltaic sources include reacting at least one carbon oxide and a reducing agent in the presence of a substrate comprising a catalyst to form a solid carbon product over the substrate. Material is disposed over at least a portion of the solid carbon product to form a nanofiber Schottky barrier array. A radioactive source is disposed adjacent the nanofiber Schottky barrier array.
대표청구항▼
1. A primary voltaic source, comprising: a Schottky barrier array comprising a semiconductor component and a metallic coating over the semiconductor component, the semiconductor component and the metallic coating joined at a metal-semiconductor junction, the semiconductor component comprising at lea
1. A primary voltaic source, comprising: a Schottky barrier array comprising a semiconductor component and a metallic coating over the semiconductor component, the semiconductor component and the metallic coating joined at a metal-semiconductor junction, the semiconductor component comprising at least one selected from the group consisting of a semiconductor carbon nanotube and a carbon nanofiber, the Schottky barrier array defining a plurality of voids therein; anda radioactive source comprising at least one radioactive element configured to emit radioactive particles and positioned proximate to the Schottky barrier array such that at least a portion of the radioactive particles impinge on the Schottky barrier array to produce a flow of electrons across the metal-semiconductor junction, the radioactive source occupying at least a portion of the plurality of voids. 2. The primary voltaic source of claim 1, wherein the Schottky barrier array comprises a plurality of semiconductor carbon nanotubes, and wherein an interior surface of the plurality of semiconductor carbon nanotubes defines the voids. 3. The primary voltaic source of claim 1, where the radioactive source comprises at least one material selected from the group consisting of gases, liquids, solids, gels, and foams. 4. The primary voltaic source of claim 3, wherein the Schottky barrier comprises a plurality of semiconductor carbon nanotubes defining interstices, and wherein the radioactive source is disposed within the interstices. 5. The primary voltaic source of claim 1, wherein the Schottky barrier comprises a plurality of semiconductor carbon nanofibers and the metallic coating formed over the plurality of semiconductor nanofibers, wherein a first end of each semiconductor nanofiber is secured to a substrate. 6. The primary voltaic source of claim 5, wherein the plurality of semiconductor nanofibers comprises a first plurality and a second plurality of the semiconductor nanofibers, wherein the first plurality of semiconductor nanofibers is secured outwardly from a first side of the substrate and the second plurality of semiconductor nanofibers is secured outwardly from a second, opposite side of the substrate. 7. The primary voltaic source of claim 5, wherein each semiconductor nanofiber of the plurality comprises a material of the same type as a material of the substrate, and wherein each semiconductor nanofiber of the plurality forms an electrically conductive contact site with the substrate. 8. The primary voltaic source of claim 7, wherein the metallic coating formed over the plurality of nanofibers forms an electrically conducting continuous layer over at least a portion of each semiconductor nanofiber of the plurality and over at least a portion of the substrate. 9. The primary voltaic source of claim 5, wherein each semiconductor nanofiber of the plurality comprises a semiconductor carbon fiber nanotube with a metallic coating. 10. The primary voltaic source of claim 1, wherein: the Schottky barrier array comprises a first plurality of semiconductor nanofibers secured outwardly from a first substrate and a first metallic coating formed over the plurality of semiconductor nanofibers;the voltaic source comprises a second Schottky barrier array comprising a second plurality of semiconductor nanofibers secured outwardly from a second substrate and a second metallic coating formed over the second plurality of semiconductor nanofibers; anda major surface of the second substrate is oriented substantially parallel to a major surface of the first substrate. 11. The primary voltaic source of claim 1, wherein the radioactive source comprises at least one low-energy particle emitter. 12. The voltaic source of claim 11, wherein the at least one low-energy particle emitter is configured to emit particles having an energy of less than about 0.2 MeV. 13. The primary voltaic source of claim 1, wherein the radioactive source comprises at least one material selected from the group consisting of tritium, beryllium-10, carbon-14, silicon-32, phosphorous-32, cobalt-60, krypton-85, strontium-90, cesium-137, promethium-147, americium-241, radium-226, lead-210, polonium-210, radium-228, actinium-227, thorium-228, uranium-234, uranium-235, curium-242, and curium-244. 14. The primary voltaic source of claim 1, wherein the radioactive source comprises tritium and americium-241. 15. The primary voltaic source of claim 1, wherein the radioactive source is integrated with the metallic coating of the Schottky barrier array. 16. The primary voltaic source of claim 1, wherein the radioactive source is integrated with the semiconductor component of the Schottky barrier array. 17. A method for producing a primary voltaic source, comprising: reacting at least one carbon oxide and a reducing agent in the presence of a substrate comprising a catalyst to form a solid carbon product over the substrate;disposing a material over at least a portion of the solid carbon product to form a Schottky barrier array comprising a semiconductor component and a metallic coating over the semiconductor component, the semiconductor component comprising at least one selected from the group consisting of a semiconductor carbon nanotube and a carbon nanofiber, the semiconductor component and the metallic coating joined at a metal-semiconductor junction, the Schottky barrier array defining a plurality of voids therein; anddisposing a radioactive source comprising at least one radioactive element configured to emit radioactive particles proximate to the Schottky barrier array such that the radioactive source occupies at least a portion of the plurality of voids and such that at least a portion of radioactive particles leaving the radioactive source impinge on the Schottky barrier array to produce a flow of electron across the metal-semiconductor junction. 18. The method of claim 17, wherein reacting at least one carbon oxide and a reducing agent comprises reacting carbon dioxide with a reducing agent comprising hydrogen, an alkane, or an alcohol. 19. The method of claim 17, wherein reacting at least one carbon oxide and a reducing agent comprises forming a solid carbon product having semiconductor properties. 20. The method of claim 19, wherein disposing a material over at least a portion of the solid carbon product comprises disposing the metallic coating over the solid carbon product. 21. The method of claim 17, wherein disposing a radioactive source proximate to the Schottky barrier array comprises disposing at least one material selected from the group consisting of tritium, beryllium-10, carbon-14, silicon-32, phosphorous-32, cobalt-60, krypton-85, strontium-90, cesium-137, promethium-147, americium-241, radium-226, lead-210, polonium-210, radium-228, actinium-227, thorium-228, uranium-234, uranium-235, curium-242, and curium-244 adjacent the Schottky barrier array.
Biris, Alexandru Sorin; Biris, Alexandru Radu; Lupu, Dan; Wilkes, Jon Gardner; Buzatu, Dan Alexander; Miller, Dwight Wayne; Darsey, Jerry A., Apparatus and methods for synthesis of large size batches of carbon nanostructures.
Biris,Alexandru Sorin; Biris,Alexandru Radu; Lupu,Dan; Wilkes,Jon Gardner; Buzatu,Dan Alexander; Miller,Dwight Wayne; Darsey,Jerry A., Apparatus and methods for synthesis of large size batches of carbon nanostructures.
Baker R. Terry K. (86 Lee Rd. - 827 Opelika AL 36801) Rodriguez Nelly M. (86 Lee Rd. - 827 Opelika AL 36801), Carbon fiber structures having improved interlaminar properties.
Tennent Howard G. (Kennett Square PA) Barber James J. (Arlington MA) Hoch Robert (Middle Village NY), Carbon fibrils, method for producing same and adhesive compositions containing same.
Tennent Howard G. (Kennett Square PA) Barber James J. (Arlington MA) Hoch Robert (Middle Village NY), Carbon fibrils, method for producing same and adhesive compositions containing same.
Tennent Howard G. (Kennett Square PA) Barber James J. (Arlington MA) Hoch Robert (Middle Village NY), Carbon fibrils, method for producing same and adhesive compositions containing same.
Chang, Hyuk; Pak, Chan-ho; Wang, Jian Nong, Carbon nanosphere with at least one opening, method for preparing the same, carbon nanosphere-impregnated catalyst using the carbon nanosphere, and fuel cell using the catalyst.
Chang, Hyuk; Pak, Chan-ho; Wang, Jian Nong, Carbon nanosphere with at least one opening, method for preparing the same, carbon nanosphere-impregnated catalyst using the carbon nanosphere, and fuel cell using the catalyst.
Choi, Jae-young; Pak, Chan-ho; Doo, Seok-gwang; Lee, Jeong-hee; Lee, Young-hee; An, Kay-hyeok; Kim, Sung-jin, Carbon nanotube, support catalyst, method of preparing the support catalyst and a fuel cell comprising the support catalyst.
Abatzoglou, Nicolas; Gitzhofer, François; Blanchard, Jasmin; De Oliveira Vigier, Karine; Gravelle, Denis, Carbon sequestration and dry reforming process and catalysts to produce same.
Ichikawa Masaru,JPX ; Ohnishi Ryuichiro,JPX ; Wang Linsheng,JPX, Catalyst for the conversion of low carbon number aliphatic hydrocarbons to higher carbon number hydrocarbons, process for preparing the catalyst and process using the catalyst.
Masaru Ichikawa JP; Ryuichiro Ohnishi JP; Linsheng Wang JP, Catalyst for the conversion of low carbon number aliphatic hydrocarbons to higher carbon number hydrocarbons, process for preparing the catalyst and process using the catalyst.
Margrave, John L.; Mickelson, Edward T.; Hauge, Robert; Boul, Peter; Huffman, Chad; Liu, Jie; Smalley, Richard E.; Smith, Ken; Colbert, Daniel T., Chemical derivatization of single-wall carbon nanotubes to facilitate solvation thereof, and use of derivatized nanotubes.
Margrave, John L.; Mickelson, Edward T.; Hauge, Robert; Boul, Peter; Huffman, Chad; Liu, Jie; Smalley, Richard E.; Smith, Ken; Colbert, Daniel T., Chemical derivatization of single-wall carbon nanotubes to facilitate solvation thereof; and use of derivatized nanotubes to form catalyst-containing seed materials for use in making carbon fibers.
Margrave, John L.; Mickelson, Edward T.; Hauge, Robert; Boul, Peter; Huffman, Chad; Liu, Jie; Smalley, Richard E.; Smith, Ken; Colbert, Daniel T., Chemically modifying single wall carbon nanotubes to facilitate dispersal in solvents.
Wei, Fei; Wang, Yao; Luo, Guohua; Yu, Hao; Li, Zhifei; Qian, Weizhong; Wang, Zhanwen; Jin, Yong, Continuous mass production of carbon nanotubes in a nano-agglomerate fluidized-bed and the reactor.
Margrave, John L.; Mickelson, Edward T.; Hauge, Robert; Boul, Peter; Huffman, Chad; Liu, Jie; Smalley, Richard E.; Smith, Ken; Colbert, Daniel T., Dispersions and solutions of fluorinated single-wall carbon nanotubes.
Shen Yousheng (Salt Lake City UT) Joshi Ashok V. (Salt Lake City UT) Taylor Dale M. (Salt Lake City UT) Boettcher Michael J. (West Jordan UT) Krist Kevin (Palatine IL) Virkar Anil V. (Salt Lake City , Enhancement of mechanical properties of ceramic membranes and solid electrolytes.
Smalley, Richard E.; Smith, Ken A.; Colbert, Daniel T.; Nikolaev, Pavel; Bronikowski, Michael J.; Bradley, Robert K.; Rohmund, Frank, Gas-phase nucleation and growth of single-wall carbon nanotubes from high pressure CO.
Nishino, Hitoshi; Nakaoka, Haruyuki; Okimi, Katsuhide; Nishida, Ryoichi; Matsui, Takeo, Iron-carbon composite, carbonaceous material comprising said iron-carbon composite and process for preparing the same.
Nishino, Hitoshi; Nakaoka, Haruyuki; Okimi, Katsuhide; Nishida, Ryoichi; Matsui, Takeo, Iron-carbon composite, carbonaceous material comprising said iron-carbon composite and process for preparing the same.
Smalley, Richard E.; Colbert, Daniel T.; Smith, Ken A.; Walters, Deron A.; Casavant, Michael J.; Huffman, Chad B.; Yakobson, Boris I.; Hague, Robert H.; Saini, Rajesh Kumar; Chiang, Wan-Ting, Macroscopic ordered assembly of carbon nanotubes.
Setoguchi, Toshihiko; Fujioka, Yuichi; Tsuchiyama, Yoshihiko; Yasutake, Akinori; Noda, Matsuhei; Kobayashi, Norihisa; Nishida, Ryoichi; Nishino, Hitoshi; Okimi, Katsuhide; Hachiya, Akihiro, Manufacturing method for a carbon nanomaterial, a manufacturing apparatus for a carbon nanomaterial, and manufacturing facility for a carbon nanomaterial.
Pham-Huu, Cuong; Ledoux, Marc-Jacques; Begin, Dominique; Nguyen, Patrick; Amadou, Julien; Tessonnier, Jean-Philippe, Materials based on tangled nanotubes or nanofibres, preparation method thereof and use of same.
Abdelmalek Fawzy T. (12807 Willowyck Dr. St. Louis MO 63146), Method and apparatus for flue gas cleaning by separation and liquefaction of sulfur dioxide and carbon dioxide.
Colbert,Daniel T.; Dai,Hongjie; Hafner,Jason H.; Rinzler,Andrew G.; Smalley,Richard E., Method for forming an array of single-wall carbon nanotubes and compositions thereof.
Ma,Jun; Moy,David; Tennent,Howard; Hoch,Robert; Fischer,Alan, Method for preparing catalyst supports and supported catalysts from single walled carbon nanotubes.
Nolan Peter E. ; Cutler Andrew H. ; Lynch David G., Method for producing encapsulated nanoparticles and carbon nanotubes using catalytic disproportionation of carbon monoxi.
Nolan Peter E. ; Cutler Andrew H. ; Lynch David G., Method for producing encapsulated nanoparticles and carbon nanotubes using catalytic disproportionation of carbon monoxi.
Edwin, Emil; Arnesen, Tore; Aaser, Knut Ivar; Rytter, Erling; Johansen, Johan Arnold; Fors, John, Method for the production of particulate carbon products.
Smalley Richard E. ; Colbert Daniel T. ; Guo Ting ; Rinzler Andrew G. ; Nikolaev Pavel ; Thess Andreas, Method of making ropes of single-wall carbon nanotubes.
Harutyunyan, Avetik; Tokune, Toshio; Fernandez, Elena Mora, Methods for controlling the quality of metal nanocatalyst for growing high yield carbon nanotubes.
Strano, Michael S.; Usrey, Monica; Barone, Paul; Dyke, Christopher A.; Tour, James M.; Kittrell, W. Carter; Hauge, Robert H; Smalley, Richard E.; Marek, legal representative, Irene Marie, Methods for selective functionalization and separation of carbon nanotubes.
Burk Maksymilian (Los Angeles CA) Blumenthal Jack L. (Los Angeles CA), Novel carbonaceous material and process for producing a high BTU gas from this material.
Paparizos Christos (Willowick OH) Shaw Wilfrid G. (Lyndhurst OH), Process for converting methane and/or natural gas to more readily transportable materials.
Moy, David; Chishti, Asif, Process for producing single wall nanotubes using unsupported metal catalysts and single wall nanotubes produced according to this method.
Moy,David; Chishti,Asif, Process for producing single wall nanotubes using unsupported metal catalysts and single wall nanotubes produced according to this method.
Smalley, Richard E.; Hauge, Robert H.; Willis, Peter Athol; Kittrell, W. Carter, Process utilizing pre-formed cluster catalysts for making single-wall carbon nanotubes.
Wilkes,Jon Gardner; Buzatu,Dan Alexander; Miller,Dwight Wayne; Biris,Alexandru Sorin; Biris,Alexandru Radu; Lupu,Dan; Darsey,Jerry A., Production of nanostructures by curie point induction heating.
Russell Virginia (435 Crescent Ave. Buffalo NY 14214), Protecting organisms and the environment from harmful radiation by controlling such radiation and safely disposing of it.
Kim, Sung Soo; Jeon, Jong Kwan, Reaction chamber for manufacturing a carbon nanotube, apparatus for manufacturing the carbon nanotube and system for manufacturing the carbon nanotube.
Strano, Michael S.; Usrey, Monica; Barone, Paul; Dyke, Christopher A.; Tour, James M.; Kittrell, W. Carter; Hauge, Robert H.; Smalley, Richard E., Selective functionalization of carbon nanotubes.
Dai Hongjie ; Fan Shoushan,CNX ; Chapline Michael ; Franklin Nathan ; Tombler Thomas, Self-oriented bundles of carbon nanotubes and method of making same.
Hata, Kenji; Iijima, Sumio; Yumura, Motoo; Futaba, Don N., Single-walled carbon nanotube and aligned single-walled carbon nanotube bulk structure, and their production process, production apparatus and application use.
Hata, Kenji; Iijima, Sumio; Yumura, Motoo; Futaba, Don N., Single-walled carbon nanotube and aligned single-walled carbon nanotube bulk structure, and their production process, production apparatus and application use.
Rich, Joseph William; Subramaniam, Vish V.; Plonjes, Elke Christina; Lempert, Walter Reuben, Synthesis method for producing carbon clusters and structured carbon clusters produced thereby.
Tennent Howard (Kennett Square PA) Hausslein Robert W. (Lexington MA) Leventis Nicholas (Somerville MA) Moy David (Winchester MA), Three dimensional macroscopic assemblages of randomly oriented carbon fibrils and composites containing same.
Liu, Fuchen; Arhancet, Juan; Coleman, James P.; McGrath, Martin P., Transition metal-containing catalysts and processes for their preparation and use as oxidation and dehydrogenation catalysts.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.