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Semiconductor device and fabrication method thereof 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/786
  • H01L-027/12
  • H01L-029/66
  • G02F-001/1333
  • G02F-001/1339
  • G02F-001/1362
  • G02F-001/1368
  • H01L-029/78
  • G02F-001/133
  • G02F-001/1343
  • H01L-021/02
  • H01L-021/027
  • H01L-021/3065
  • H01L-021/308
  • H01L-029/167
  • G02F-001/1345
출원번호 US-0153047 (2016-05-12)
등록번호 US-9786787 (2017-10-10)
우선권정보 JP-11-191093 (1999-07-06)
발명자 / 주소
  • Yamazaki, Shunpei
  • Arai, Yasuyuki
  • Koyama, Jun
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Husch Blackwell LLP
인용정보 피인용 횟수 : 0  인용 특허 : 187

초록

A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic

대표청구항

1. A semiconductor device comprising: a first substrate;a second substrate facing to the first substrate;a shading film between the first substrate and the second substrate;a pixel region comprising: a first transistor over the first substrate, the first transistor comprising:a first semiconductor l

이 특허에 인용된 특허 (187)

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  185. Takayama, Toru; Sato, Keiji; Yamazaki, Shunpei, Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof.
  186. Takayama,Toru; Sato,Keiji; Yamazaki,Shunpei, Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof.
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