|국가/구분||United States(US) Patent 등록|
|국제특허분류(IPC7판)||H01L-029/786 H01L-027/12 H01L-029/66 G02F-001/1333 G02F-001/1339 G02F-001/1362 G02F-001/1368 H01L-029/78 G02F-001/133 G02F-001/1343 H01L-021/02 H01L-021/027 H01L-021/3065 H01L-021/308 H01L-029/167 G02F-001/1345|
|발명자 / 주소|
|출원인 / 주소|
|대리인 / 주소||
|인용정보||피인용 횟수 : 0 인용 특허 : 187|
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.
1. A semiconductor device comprising: a first substrate;a second substrate facing to the first substrate;a shading film between the first substrate and the second substrate;a pixel region comprising: a first transistor over the first substrate, the first transistor comprising:a first semiconductor layer including a first channel formation region and a second channel formation region;a first gate electrode and a second gate electrode overlapping with the first channel formation region and the second channel formation region, respectively, with a gate insu...