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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0203642 (2016-07-06) |
등록번호 | US-9793115 (2017-10-17) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 6 인용 특허 : 636 |
Methods of forming germanium-tin films using germane as a precursor are disclosed. Exemplary methods include growing films including germanium and tin in an epitaxial chemical vapor deposition reactor, wherein a ratio of a tin precursor to germane is less than 0.1. Also disclosed are structures and
Methods of forming germanium-tin films using germane as a precursor are disclosed. Exemplary methods include growing films including germanium and tin in an epitaxial chemical vapor deposition reactor, wherein a ratio of a tin precursor to germane is less than 0.1. Also disclosed are structures and devices including germanium-tin films formed using the methods described herein.
1. A method of forming a crystalline germanium-tin layer, the method comprising the steps of: providing a gas-phase reactor;providing a germane (GeH4) source coupled to the gas-phase reactor;providing a tin precursor source coupled to the gas-phase reactor;providing a substrate within a reaction cha
1. A method of forming a crystalline germanium-tin layer, the method comprising the steps of: providing a gas-phase reactor;providing a germane (GeH4) source coupled to the gas-phase reactor;providing a tin precursor source coupled to the gas-phase reactor;providing a substrate within a reaction chamber of the gas-phase reactor;providing germane and a tin precursor to the reaction chamber, wherein a volumetric ratio of the tin precursor to the germane is about 0.001 to about 0.1; andforming a crystalline layer of germanium tin on a surface of the substrate in a reaction chamber at a pressure between about 300 Torr and about 850 Torr, without using an etchant during the step of forming a crystalline layer. 2. The method of forming a crystalline germanium-tin layer according to claim 1, wherein the crystalline layer of germanium tin comprises silicon and the method further comprises: providing a silicon source precursor. 3. The method of forming a crystalline germanium-tin layer according to claim 2, wherein the step of providing a silicon source precursor comprises providing a precursor selected from the group consisting of: disilane, trisilane, tetrasilane, and neopentasilane. 4. The method of forming a crystalline germanium-tin layer according to claim 1, wherein, during the step of growing a crystalline layer of germanium tin on a surface of the substrate, an operating pressure of the reaction chamber is about 400 Torr to about 800 Torr. 5. The method of forming a crystalline germanium-tin layer according to claim 1, wherein, during the step of growing a crystalline layer of germanium tin on a surface of the substrate, an operating pressure of the reaction chamber is about 500 Torr to about 760 Torr. 6. The method of forming a crystalline germanium-tin layer according to claim 1, wherein, during the step of growing a crystalline layer of germanium tin on a surface of the substrate, an operating pressure of the reaction chamber is ambient atmospheric pressure±about 20 Torr. 7. The method of forming a crystalline germanium-tin layer according to claim 1, wherein the volumetric ratio of the tin precursor to the germane is about 0.005 to about 0.05. 8. The method of forming a crystalline germanium-tin layer according to claim 1, wherein, during the step of growing a crystalline layer of germanium tin on a surface of the substrate, an operating temperature within the reaction chamber is about 200° C. to about 500° C. 9. The method of forming a crystalline germanium-tin layer according to claim 1, wherein, during the step of growing a crystalline layer of germanium tin on a surface of the substrate, an operating temperature within the reaction chamber is about 250° C. to about 450° C. 10. The method of forming a crystalline germanium-tin layer according to claim 1, wherein the step of providing a tin precursor source comprises providing a tin source selected from the group consisting of SnCl4, SnD4, and a methyl and halide substituted stannate. 11. The method of forming a crystalline germanium-tin layer according to claim 1, wherein the step of growing a crystalline layer of germanium tin on a surface of the substrate comprises growing a crystalline layer comprising about 2 at % to about 15 at % tin. 12. The method of forming a crystalline germanium-tin layer according to claim 1, wherein a ratio of the tin precursor to the germane precursor is less than 0.05. 13. A method of forming a structure comprising a germanium-tin layer, the method comprising the steps of: forming an insulating layer overlying the substrate;forming a via within the insulating layer;providing a gas-phase reactor;providing a substrate within a reaction chamber of the gas-phase reactor;forming a crystalline layer comprising germanium tin on a surface of the substrate using one or more precursors comprising germane, wherein a pressure within the reaction chamber is between about 300 Torr and about 850 Torr; andselectively forming the crystalline layer comprising germanium tin within the via. 14. The method of forming a structure comprising a germanium-tin layer of claim 13, wherein the substrate comprises a layer comprising germanium overlying silicon. 15. The method of forming a structure comprising a germanium-tin layer of claim 13, wherein the germanium-tin layer comprises from about 2 at % tin to about 15 at % tin. 16. The method of forming a structure comprising a germanium-tin layer of claim 13, wherein the step of forming does not include exposure of the substrate to an etchant. 17. The method of forming a structure comprising a germanium-tin layer of claim 13, wherein the substrate comprises a layer comprising germanium silicon tin overlying silicon. 18. The method of forming a structure comprising a germanium-tin layer of claim 13, wherein a volumetric ratio of a tin precursor to a germane is about 0.001 to about 0.1 during the step of forming a crystalline layer. 19. A structure comprising a crystalline layer of germanium tin formed according to the method of claim 13. 20. The structure comprising a crystalline layer of germanium tin of claim 19, wherein the structure comprises a germanium tin layer between two layers of germanium silicon tin.
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