초록 ▼

The invention provides a reactor for the manufacture of silicon by chemical vapor deposition (CVD), the reactor comprises a reactor body that can rotate around an axis with the help of a rotation device operatively arranged to the reactor, at least one sidewall that surrounds the reactor body, at le

The invention provides a reactor for the manufacture of silicon by chemical vapor deposition (CVD), the reactor comprises a reactor body that can rotate around an axis with the help of a rotation device operatively arranged to the reactor, at least one sidewall that surrounds the reactor body, at least one inlet for reaction gas, at least one outlet for residual gas and at least one heat appliance operatively arranged to the reactor. The reactor is characterized in that during operation for the manufacture of silicon by CVD, the reactor comprises a layer of particles on the inside of at least, one sidewall.

대표청구항 ▼

1. A reactor for manufacture of solid silicon by chemical vapour deposition (CVD), the reactor comprising: a reactor body;a rotation device operatively arranged to the reactor, wherein the rotation device is configured to constantly rotate the reactor around an axis during production of the solid si

1. A reactor for manufacture of solid silicon by chemical vapour deposition (CVD), the reactor comprising: a reactor body;a rotation device operatively arranged to the reactor, wherein the rotation device is configured to constantly rotate the reactor around an axis during production of the solid silicon by the CVD;at least one sidewall that surrounds the reactor body and is non-parallel to the axis;at least one inlet for silicon-containing reaction gas;at least one outlet for residual gas;a temperature control appliance consisting essentially of a heat appliance operatively arranged to the reactor, wherein the heat appliance is configured to heat the at least one sidewall;a loose particle layer on an inner surface of the at least one sidewall, the loose particle layer being held in place by rotation of the reactor body during the manufacture of solid silicon by the CVD; andwherein the CVD takes place on the loose particulate layer. 2. The reactor according to claim 1, wherein the loose particle layer comprises a material that minimizes contamination of the solid silicon, wherein the material comprises particles of solid silicon of metallurgic quality or purer. 3. The reactor according to claim 1, wherein the loose particle layer, at least across a part of a thickness, is comprised of round particles. 4. The reactor according to claim 1, wherein the reactor is shaped as a pipe section, wherein the pipe section is configured to rotate around a rotational axis of the reactor. 5. The reactor according to claim 1, wherein the reactor is formed as a standing conical pipe section that can rotate about a longitudinal axis with a circular inner cross section and a largest diameter at an upper end. 6. The reactor according to claim 1, wherein the reactor is formed with an outer particle layer, wherein the outer particle layer is fastened to the at least one sidewall. 7. The reactor according to claim 1, comprising an outlet and at least one inlet at a same end, wherein the at least one inlet is arranged concentrically outside the outlet. 8. The reactor according to claim 1, comprising a particle layer of silicon powder formed by operating the reactor containing reaction gas for the CVD before the CVD is initiated. 9. A method for manufacture of solid silicon by chemical vapour deposition (CVD), the method comprising: constantly rotating a reactor around an axis, the reactor containing particles imported to or produced in the reactor to produce a loose particle layer on an inner reactor wall of, wherein the inner reactor wall is non-parallel to the axis;importing silicon-containing reaction gas for the CVD;rotating the reactor and heating the inner reactor wall while producing solid silicon by the CVD on an inside of the loose particle layer;loosening the solid silicon from the loose particle layer; andtaking the solid silicon out and carrying out any preparation of an inner surface of the reactor before repeating the steps of the method. 10. The reactor according to claim 1, wherein the loose particle layer is placed at an angle relative to the axis. 11. The reactor according to claim 1, wherein the at least one sidewall is slanted relative to the axis. 12. The reactor according to claim 1, wherein the at least one sidewall is at an acute angle relative to the axis. 13. The reactor according to claim 1, wherein the at least one sidewall is tilted relative to the axis. 14. The reactor according to claim 1, wherein the at least one sidewall is tapered relative to the axis. 15. The method according to claim 9, wherein the reactor is kept warm during the method steps and in rotation up to the CVD. 16. The method according to claim 9, wherein a particle layer of silicon powder is formed during operation of the reactor containing reaction gas for the CVD before starting up the chemical vapour deposition, by control of concentration and pressure of the reaction gas, temperature and speed of rotation of the reactor so that at least one of silicon powder, amorphous and crystalline, is formed. 17. A method of manufacture of solid silicon by chemical vapour deposition (CVD), the method comprising: producing silicon via a reactor comprising: a reactor body;a rotation device operatively arranged to the reactor, wherein the rotation device is configured to constantly rotate the reactor around an axis during production of the solid silicon by CVD;at least one sidewall that surrounds the reactor body and is non-parallel to the axis;at least one inlet for silicon-containing reaction gas;at least one outlet for residual gas;a temperature control appliance consisting essentially of a heat appliance operatively arranged to the reactor, wherein the heat appliance is configured to heat the at least one sidewall;a loose particle layer on an inner surface of the at least one sidewall, the loose particle layer being held in place by rotation of the reactor body during the manufacture of solid silicon by the CVD; andwherein the CVD of solid silicon takes place on the loose particulate layer. 18. The method of claim 17, wherein the producing comprises applying a loose particle layer on the inner surface of the at least one sidewall in the reactor, wherein the loose particle layer facilitates removal of the manufactured solid silicon from the reactor.