It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and
It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect to visible light; a first adhesive layer over the substrate; an insulating film containing nitrogen and silicon over the first adhesive layer; a light-emitting element including a first electrode, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode; a second adhesive layer over the second electrode; and a metal substrate over the second adhesive layer, wherein the thickness of the metal substrate is 10 μm to 200 μm inclusive. Further, an electronic device using the flexible light-emitting device is provided.
대표청구항▼
1. A display device comprising: a first film comprising a resin;a second film over and in contact with the first film, the second film has a stacked structure comprising a silicon nitride layer between layers which each comprise a material represented by SiOxNy, where x is larger than y;a semiconduc
1. A display device comprising: a first film comprising a resin;a second film over and in contact with the first film, the second film has a stacked structure comprising a silicon nitride layer between layers which each comprise a material represented by SiOxNy, where x is larger than y;a semiconductor film over and in contact with the second film, the semiconductor film comprising polysilicon;a gate insulating film over and in contact with the semiconductor film, the gate insulating film comprising a material represented by SiOxNy, where x is larger than y;a gate electrode over and in contact with the gate insulating film, the gate electrode comprising a metal selected from W, Al, Ta, Mo, and Ti;an insulating film over and in contact with the gate electrode, the insulating film comprising: a first layer comprising a material represented by SiNyOx, where y is larger than x; anda second layer over the first layer, the second layer comprising a material represented by SiOxNy, where x is larger than y;a source electrode and a drain electrode over the insulating film; anda light-emitting element electrically connected to one of the source electrode and the drain electrode, the light-emitting element comprising: a first electrode comprising indium-tin-oxide;a second electrode comprising Ag; andan EL layer between the first electrode and the second electrode. 2. The display device according to claim 1, further comprising: an adhesive layer over and in contact with the light-emitting element; anda flexible metal film over and in contact with the adhesive layer. 3. The display device according to claim 1, wherein the light-emitting element is a bottom-emission type light-emitting element. 4. The display device according to claim 1, wherein the light-emitting element is a white-emissive light-emitting element. 5. The display device according to claim 1, further comprising a transparent conductive film under the first film. 6. An electronic device comprising: a display portion comprising the display device according to claim 1,wherein the display device is deformed and is disposed along a curved surface of the electronic device. 7. The electronic device according to claim 6, wherein the electronic device is a portable information terminal. 8. A display device comprising: a flexible substrate;a first insulating layer over the flexible substrate;a second insulating layer over the first insulating layer;a third insulating layer over the second insulating layer;a fourth insulating layer over the third insulating layer;a semiconductor film over the fourth insulating layer;a gate insulating film over the semiconductor film;a gate electrode over the gate insulating film;a fifth insulating layer over the gate electrode;a sixth insulating layer over the fifth insulating layer;a first conductive film over the sixth insulating layer, the first conductive film being electrically connected to the semiconductor film;a second conductive film over the sixth insulating layer, the second conductive film being electrically connected to the semiconductor film;a first electrode electrically connected to one of the first conductive film and the second conductive film;a seventh insulating layer over the first electrode;a light-emitting layer over the first electrode and the seventh insulating layer; anda second electrode over the light-emitting layer,wherein oxygen content in the first insulating layer is larger than nitrogen content in the first insulating layer,wherein nitrogen content in the second insulating layer is larger than oxygen content in the second insulating layer,wherein nitrogen content in the third insulating layer is larger than oxygen content in the third insulating layer,wherein oxygen content in the fourth insulating layer is larger than nitrogen content in the fourth insulating layer,wherein oxygen content in the fifth insulating layer is larger than nitrogen content in the fifth insulating layer, andwherein nitrogen content in the sixth insulating layer is larger than oxygen content in the sixth insulating layer. 9. The display device according to claim 8, wherein the semiconductor film comprises polysilicon. 10. The display device according to claim 8, wherein the first insulating layer is a silicon oxynitride layer,wherein the second insulating layer is a silicon nitride layer,wherein the third insulating layer is a silicon nitride oxide layer,wherein the fourth insulating layer is a silicon oxynitride layer,wherein the fifth insulating layer is a silicon oxynitride layer, andwherein the sixth insulating layer is a silicon nitride oxide layer. 11. An electronic device comprising: a display portion comprising the display device according to claim 8,wherein the display device is deformed and is disposed along a curved surface of the electronic device. 12. A display device comprising: a first insulating layer;a second insulating layer over the first insulating layer;a third insulating layer over the second insulating layer;a fourth insulating layer over the third insulating layer;a semiconductor film over the fourth insulating layer;a gate insulating film over the semiconductor film;a gate electrode over the gate insulating film;a fifth insulating layer over the gate electrode;a sixth insulating layer over the fifth insulating layer;a first conductive film over the sixth insulating layer, the first conductive film being electrically connected to the semiconductor film;a second conductive film over the sixth insulating layer, the second conductive film being electrically connected to the semiconductor film;a first electrode electrically connected to one of the first conductive film and the second conductive film;a seventh insulating layer over the first electrode;a light-emitting layer over the first electrode and the seventh insulating layer; anda second electrode over the light-emitting layer,wherein oxygen content in the first insulating layer is larger than nitrogen content in the first insulating layer,wherein nitrogen content in the second insulating layer is larger than oxygen content in the second insulating layer,wherein nitrogen content in the third insulating layer is larger than oxygen content in the third insulating layer,wherein oxygen content in the fourth insulating layer is larger than nitrogen content in the fourth insulating layer,wherein oxygen content in the fifth insulating layer is larger than nitrogen content in the fifth insulating layer,wherein nitrogen content in the sixth insulating layer is larger than oxygen content in the sixth insulating layer, andwherein the display device is configured to display in a state where the display device is curved. 13. The display device according to claim 12, wherein the semiconductor film comprises polysilicon. 14. The display device according to claim 12, wherein the first insulating layer is a silicon oxynitride layer,wherein the second insulating layer is a silicon nitride layer,wherein the third insulating layer is a silicon nitride oxide layer,wherein the fourth insulating layer is a silicon oxynitride layer,wherein the fifth insulating layer is a silicon oxynitride layer, andwherein the sixth insulating layer is a silicon nitride oxide layer. 15. An electronic device comprising: a display portion comprising the display device according to claim 12,wherein the display device is deformed and is disposed along a curved surface of the electronic device. 16. The display device according to claim 12, further comprising a flexible substrate under the first insulating layer. 17. A display device comprising: a flexible substrate;a first insulating layer over the flexible substrate;a second insulating layer over the first insulating layer;a third insulating layer over the second insulating layer;a fourth insulating layer over the third insulating layer;a fifth insulating layer over the fourth insulating layer;a semiconductor film over the fifth insulating layer;a gate insulating film over the semiconductor film;a gate electrode over the gate insulating film;a sixth insulating layer over the gate electrode;a seventh insulating layer over the sixth insulating layer;a first conductive film over the seventh insulating layer, the first conductive film being electrically connected to the semiconductor film;a second conductive film over the seventh insulating layer, the second conductive film being electrically connected to the semiconductor film;a first electrode electrically connected to one of the first conductive film and the second conductive film;an eighth insulating layer over the first electrode;a light-emitting layer over the first electrode and the eighth insulating layer; anda second electrode over the light-emitting layer,wherein oxygen content in the first insulating layer is larger than nitrogen content in the first insulating layer,wherein nitrogen content in the second insulating layer is larger than oxygen content in the second insulating layer,wherein oxygen content in the third insulating layer is larger than nitrogen content in the third insulating layer,wherein nitrogen content in the fourth insulating layer is larger than oxygen content in the fourth insulating layer,wherein oxygen content in the fifth insulating layer is larger than nitrogen content in the fifth insulating layer,wherein oxygen content in the sixth insulating layer is larger than nitrogen content in the sixth insulating layer, andwherein nitrogen content in the seventh insulating layer is larger than oxygen content in the seventh insulating layer. 18. The display device according to claim 17, wherein the semiconductor film comprises polysilicon. 19. The display device according to claim 17, wherein the first insulating layer is a silicon oxynitride layer,wherein the second insulating layer is a silicon nitride layer,wherein the third insulating layer is a silicon oxynitride layer,wherein the fourth insulating layer is a silicon nitride oxide layer,wherein the fifth insulating layer is a silicon oxynitride layer,wherein the sixth insulating layer is a silicon oxynitride layer, andwherein the seventh insulating layer is a silicon nitride oxide layer. 20. An electronic device comprising: a display portion comprising the display device according to claim 17,wherein the display device is deformed and is disposed along a curved surface of the electronic device. 21. A display device comprising: a first insulating layer;a second insulating layer over the first insulating layer;a third insulating layer over the second insulating layer;a fourth insulating layer over the third insulating layer;a fifth insulating layer over the fourth insulating layer;a semiconductor film over the fifth insulating layer;a gate insulating film over the semiconductor film;a gate electrode over the gate insulating film;a sixth insulating layer over the gate electrode;a seventh insulating layer over the sixth insulating layer;a first conductive film over the seventh insulating layer, the first conductive film being electrically connected to the semiconductor film;a second conductive film over the seventh insulating layer, the second conductive film being electrically connected to the semiconductor film;a first electrode electrically connected to one of the first conductive film and the second conductive film;an eighth insulating layer over the first electrode;a light-emitting layer over the first electrode and the eighth insulating layer; anda second electrode over the light-emitting layer,wherein oxygen content in the first insulating layer is larger than nitrogen content in the first insulating layer,wherein nitrogen content in the second insulating layer is larger than oxygen content in the second insulating layer,wherein oxygen content in the third insulating layer is larger than nitrogen content in the third insulating layer,wherein nitrogen content in the fourth insulating layer is larger than oxygen content in the fourth insulating layer,wherein oxygen content in the fifth insulating layer is larger than nitrogen content in the fifth insulating layer,wherein oxygen content in the sixth insulating layer is larger than nitrogen content in the sixth insulating layer,wherein nitrogen content in the seventh insulating layer is larger than oxygen content in the seventh insulating layer, andwherein the display device is configured to display in a state where the display device is curved. 22. The display device according to claim 21, wherein the semiconductor film comprises polysilicon. 23. The display device according to claim 21, wherein the first insulating layer is a silicon oxynitride layer,wherein the second insulating layer is a silicon nitride layer,wherein the third insulating layer is a silicon oxynitride layer,wherein the fourth insulating layer is a silicon nitride oxide layer,wherein the fifth insulating layer is a silicon oxynitride layer,wherein the sixth insulating layer is a silicon oxynitride layer, andwherein the seventh insulating layer is a silicon nitride oxide layer. 24. An electronic device comprising: a display portion comprising the display device according to claim 21,wherein the display device is deformed and is disposed along a curved surface of the electronic device. 25. The display device according to claim 21, further comprising a flexible substrate under the first insulating layer.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (87)
LeCain,Richard D.; Knaian,Ara N.; O'Neil,Steven J.; Duthaler,Gregg M.; Danner,Guy M.; Zehner,Robert W.; Goenaga,Alberto; Davis,Benjamin Max; Chan,Randolph W.; Albert,Jonathan D.; Crossley,Glen, Components and methods for use in electro-optic displays.
LeCain,Richard D.; Knaian,Ara N.; O'Neil,Steven J.; Duthaler,Gregg M.; Danner,Guy M.; Zehner,Robert W.; Goenaga,Alberto; Davis,Benjamin Max; Chan,Randolph W.; Albert,Jonathan D.; Crossley,Glen, Components and methods for use in electro-optic displays.
Danner, Guy M.; Patry, Shamus Ford; Honeyman, Charles Howie; Whitesides, Thomas H.; McCreary, Michael D.; Duthaler, Gregg M., Electro-optic display with edge seal.
Danner, Guy M.; Patry, Shamus Ford; Honeyman, Charles Howie; Whitesides, Thomas H.; McCreary, Michael D.; Duthaler, Gregg M., Electro-optic display with edge seal.
Danner, Guy M.; Patry, Shamus Ford; Honeyman, Charles Howie; Whitesides, Thomas H.; McCreary, Michael D.; Duthaler, Gregg M., Electro-optic display with edge seal.
Danner, Guy M.; Patry, Shamus Ford; Honeyman, Charles Howie; Whitesides, Thomas H.; McCreary, Michael D.; Duthaler, Gregg M., Electro-optic display with edge seal.
Danner, Guy M.; Patry, Shamus Ford; Honeyman, Charles Howie; Whitesides, Thomas H.; McCreary, Michael D.; Duthaler, Gregg M., Electro-optic display with edge seal.
Hayashi, Kenji; Yamauchi, Yukio, Emissive device having a layer that relieves external forces on adjacent layer, process for producing the emissive device and an electronic apparatus including the emissive device.
Graff, Gordon L.; Gross, Mark E.; Affinito, John D.; Shi, Ming-Kun; Hall, Michael; Mast, Eric, Environmental barrier material for organic light emitting device and method of making.
den Boer Willem ; Zhong John Z. Z. ; Veerasamy Vijayen S. ; Lu Yiwei, High aperture liquid crystal display including thin film diodes, and method of making same.
Lin Ying-Fu,TWX ; Chang Liang-Tung,TWX ; Cheng Shiang-Peng,TWX ; Kuo Kuan-Chu,TWX ; Lin Chiao-Yun,TWX ; Liu Fu-Chou,TWX, Light-emitting diode with anti-reflector.
Yao Liang-Gi,TWX ; Cheu Yue-Feng,TWX ; Lin Keng-Chu,TWX, Method for fabricating an oxynitride layer having anti-reflective properties and low leakage current.
Maruyama,Junya; Ohno,Yumiko; Takayama,Toru; Goto,Yuugo; Yamazaki,Shunpei, Method of separating a release layer from a substrate comprising hydrogen diffusion.
Beyne, Eric; Coella-Vera, Augustin, Method of transferring ultra-thin substrates and application of the method to the manufacture of a multi-layer thin film device.
Hirano Hisakazu (Takatsuki JPX) Mori Kiju (Machida JPX) Watanabe Junichi (Yokohama JPX) Kondo Fumio (Yokohama JPX), Moisture trapping film for EL lamps of the organic dispersion type.
Suzuki Mutsumi,JPX ; Fukuyama Masao,JPX ; Hori Yoshikazu,JPX, Organic electroluminescent device having a protective covering comprising organic and inorganic layers.
Takayama, Toru; Maruyama, Junya; Mizukami, Mayumi; Yamazaki, Shunpei, Semiconductor device and peeling off method and method of manufacturing semiconductor device.
Takayama,Toru; Goto,Yuugo; Fukumoto,Yumiko; Maruyama,Junya; Tsurume,Takuya, Semiconductor device, method of manufacturing thereof, and method of manufacturing base material.
Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
Gordon Lee Graff ; Mark Edward Gross ; Ming Kun Shi ; Michael Gene Hall ; Peter Maclyn Martin ; Eric Sidney Mast, Smoothing and barrier layers on high Tg substrates.
Inoue, Satoshi; Shimoda, Tatsuya; Miyazawa, Wakao, Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus.
Sheats James R. ; Hueschen Mark R. ; Seaward Karen L. ; Roitman Daniel B. ; Briggs George Andrew Davidson,GBX, Transparent, flexible permeability barrier for organic electroluminescent devices.
Takayama,Toru; Maruyama,Junya; Goto,Yuugo; Kuwabara,Hideaki; Yamazaki,Shunpei, Vehicle, display device and manufacturing method for a semiconductor device.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.