Method and device for generating an adjustable bandgap reference voltage
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G05F-003/26
G05F-003/30
G05F-001/46
출원번호
US-0243556
(2016-08-22)
등록번호
US-9804631
(2017-10-31)
우선권정보
FR-11 54268 (2011-05-17)
발명자
/ 주소
Fort, Jimmy
Soude, Thierry
출원인 / 주소
STMicroelectronics (Rousset) SAS
대리인 / 주소
Slater Matsil, LLP
인용정보
피인용 횟수 :
1인용 특허 :
18
초록▼
A circuit includes a first PMOS transistor that includes a first PMOS source coupled to a first input node, a first PMOS gate, and a first PMOS drain. A second PMOS transistor includes a second PMOS source coupled to a second input node, a second PMOS gate, and a second PMOS drain coupled to the sec
A circuit includes a first PMOS transistor that includes a first PMOS source coupled to a first input node, a first PMOS gate, and a first PMOS drain. A second PMOS transistor includes a second PMOS source coupled to a second input node, a second PMOS gate, and a second PMOS drain coupled to the second PMOS gate. A first resistor coupled between the first PMOS source and a ground node. A first diode element coupled between the first resistor and the ground node and a second diode element coupled between the second PMOS source and the ground node. A third PMOS transistor includes a third PMOS gate, a third PMOS source coupled to a supply node, and a third PMOS drain coupled to the first input node. A fourth PMOS transistor includes a fourth PMOS gate coupled to the third PMOS gate, a fourth PMOS source coupled to the supply node, and a fourth PMOS drain coupled to the second input node.
대표청구항▼
1. A circuit comprising: a first PMOS transistor comprising a first PMOS source coupled to a first input node,a first PMOS gate, anda first PMOS drain;a second PMOS transistor comprising a second PMOS source coupled to a second input node,a second PMOS gate, anda second PMOS drain coupled to the sec
1. A circuit comprising: a first PMOS transistor comprising a first PMOS source coupled to a first input node,a first PMOS gate, anda first PMOS drain;a second PMOS transistor comprising a second PMOS source coupled to a second input node,a second PMOS gate, anda second PMOS drain coupled to the second PMOS gate;a first resistor coupled between the first PMOS source and a ground node;a first diode element coupled between the first resistor and the ground node;a second diode element coupled between the second PMOS source and the ground node;a third PMOS transistor comprising a third PMOS gate,a third PMOS source coupled to a supply node, anda third PMOS drain coupled to the first input node;a fourth PMOS transistor comprising a fourth PMOS gate coupled to the third PMOS gate,a fourth PMOS source coupled to the supply node, anda fourth PMOS drain coupled to the second input node;a first NMOS transistor coupled between the first PMOS transistor and the ground node, the first NMOS transistor comprising a first NMOS gate;a second NMOS transistor coupled between the second PMOS transistor and the ground node, the second NMOS transistor comprising a second NMOS gate coupled to the first NMOS gate;an eleventh PMOS transistor comprising, an eleventh PMOS gate coupled to the first PMOS gate,an eleventh PMOS source coupled to the second input node, andan eleventh PMOS drain:a fifth NMOS transistor comprising a fifth NMOS gate coupled to the eleventh PMOS drain,a fifth NMOS source coupled to the ground node, anda fifth NMOS drain; anda twelfth PMOS transistor comprising a twelfth PMOS source coupled to the supply node,a twelfth PMOS gate, anda twelfth PMOS drain coupled to the fifth NMOS drain. 2. The circuit of claim 1, wherein the first diode element comprises a first bipolar junction transistor (BJT) connected in diode fashion; andthe second diode element comprises a second BJT connected in diode fashion. 3. The circuit of claim 2, wherein the first BJT has a first width, and the second BJT has a second width, the first width being different than the second width. 4. The circuit of claim 1, further comprising: an eighteenth PMOS transistor comprising an eighteenth PMOS gate coupled to the twelfth PMOS gate,an eighteenth PMOS source coupled to the supply node, andan eighteenth PMOS drain; anda twelfth NMOS transistor coupled between the eighteenth PMOS transistor and the ground node. 5. The circuit of claim 4, further comprising: a thirteenth PMOS transistor comprising a thirteenth PMOS source coupled to the first input node,a thirteenth PMOS gate, anda thirteenth PMOS drain coupled to the thirteenth PMOS gate;a sixth NMOS transistor comprising a sixth NMOS source coupled to the ground node,a sixth NMOS gate coupled to the first NMOS gate, anda sixth NMOS drain coupled to the thirteenth PMOS drain; anda seventh NMOS transistor comprising a seventh NMOS source coupled to the ground node,a seventh NMOS gate, anda seventh NMOS drain coupled to the eleventh PMOS drain. 6. The circuit of claim 1, further comprising: a fifth PMOS transistor comprising a fifth PMOS gate coupled to the second PMOS gate,a fifth PMOS source, anda fifth PMOS drain; anda second resistor coupled between the fifth PMOS source and the ground node. 7. The circuit of claim 6, further comprising: a fourteenth PMOS transistor comprising a fourteenth PMOS source coupled to the first input node,a fourteenth PMOS gate coupled to the second PMOS gate, anda fourteenth PMOS drain; andan eighth NMOS transistor comprising an eighth NMOS source coupled to the ground node,an eighth NMOS gate, andan eighth NMOS drain coupled to the fourteenth PMOS drain. 8. The circuit of claim 6, further comprising: a sixth PMOS transistor comprising a sixth PMOS gate,a sixth PMOS source coupled to the supply node, anda sixth PMOS drain coupled to the second resistor; anda third NMOS transistor coupled between the fifth PMOS drain and the ground node. 9. The circuit of claim 8, further comprising: a fifteenth PMOS transistor comprising a fifteenth PMOS source coupled to the sixth PMOS drain,a fifteenth PMOS gate, anda fifteenth PMOS drain coupled to the ground node;a ninth NMOS transistor coupled between the fifteenth PMOS transistor and the ground node; anda sixteenth PMOS transistor comprising a sixteenth PMOS gate coupled to the fifteenth PMOS gate,a sixteenth PMOS source coupled to the second input node, anda sixteenth PMOS drain coupled to the ground node. 10. The circuit of claim 9, further comprising: a tenth NMOS transistor coupled between the sixteenth PMOS transistor and the ground node;an eleventh NMOS transistor coupled to the tenth NMOS transistor; anda seventeenth PMOS transistor coupled between the supply node and the eleventh NMOS transistor. 11. The circuit of claim 8, further comprising: a seventh PMOS transistor comprising a seventh PMOS gate coupled to the sixth PMOS gate,a seventh PMOS source coupled to the supply node, anda seventh PMOS drain;a fourth NMOS transistor coupled between the seventh PMOS transistor and the ground node; andan eighth PMOS transistor comprising an eighth PMOS source coupled to the seventh PMOS drain,an eighth PMOS gate, andan eighth PMOS drain coupled to the fourth NMOS transistor. 12. The circuit of claim 11, further comprising: a ninth PMOS transistor comprising a ninth PMOS source coupled to the supply node,a ninth PMOS gate coupled to the fourth PMOS gate, anda ninth PMOS drain;a third resistor coupled between the ninth PMOS transistor and the ground node; anda tenth PMOS transistor comprising a tenth PMOS gate,a tenth PMOS source coupled to the ninth PMOS drain, anda tenth PMOS drain coupled to the third resistor. 13. The circuit of claim 12, wherein the tenth PMOS gate is coupled to the eighth PMOS gate. 14. A circuit comprising: a first transistor comprising a first source coupled to a first input node,a first gate, anda first drain;a second transistor comprising a second source coupled to a second input node,a second gate, anda second drain coupled to the second gate;a first resistor coupled between the first source and a second supply node;a first BJT coupled between the first resistor and the second supply node;a second BJT coupled between the second source and the second supply node;a third transistor comprising a third gate,a third source coupled to a first supply node, anda third drain coupled to the first input node; anda fourth transistor comprising a fourth gate coupled to the third gate;a fourth source coupled to the first supply node;a fourth drain coupled to the second input node;a fifth transistor coupled between the first transistor and the second supply node, the fifth transistor comprising a fifth gate; anda sixth transistor coupled between the second transistor and the second supply node, the sixth transistor comprising a sixth gate coupled to the fifth gate;a seventh transistor comprising a seventh gate coupled to the second gate,a seventh source, anda seventh drain;a second resistor coupled between the seventh source and the second supply node;an eighth transistor comprising an eighth source coupled to the first input node,an eighth gate coupled to the second gate, andan eighth drain; anda ninth transistor comprising a ninth source coupled to the second supply node,a ninth gate, anda ninth drain coupled to the eighth drain. 15. The circuit of claim 14, wherein the first transistor is a p-type transistor;the second transistor is a p-type transistor;the third transistor is a p-type transistor;the fourth transistor is a p-type transistor;the fifth transistor is an n-type transistor; andthe sixth transistor is an n-type transistor. 16. A circuit comprising: a first PMOS transistor comprising a first PMOS load path coupled to a first input node, anda first PMOS gate;a second PMOS transistor comprising a second PMOS load path coupled to a second input node, anda second PMOS gate coupled to the second PMOS load path;a first resistor coupled between the first PMOS load path and a ground node;a first diode coupled between the first resistor and the ground node;a second diode coupled between the second PMOS load path and the ground node;a third PMOS transistor comprising a third PMOS load path coupled to the first PMOS load path,the third PMOS load path coupled between a supply node and the first input node;a fourth PMOS transistor comprising a fourth PMOS gate coupled to a third PMOS gate,a fourth PMOS load path coupled between the supply node and the secondinput node;a first NMOS transistor comprising a first NMOS load path coupled between the first PMOS load path and the ground node;a second NMOS transistor comprising a second NMOS load path coupled between the second PMOS load path and the ground node;a fifth PMOS transistor comprising a fifth PMOS gate coupled to the second PMOS gate, anda fifth PMOS load path;a second resistor coupled between the fifth PMOS load path and the ground node;a sixth PMOS transistor comprising a sixth PMOS gate,a sixth PMOS load path coupled between the supply node and the second resistor;a third NMOS transistor comprising a third NMOS load path coupled between the fifth PMOS load path and the ground node;a fifteenth PMOS transistor comprising a fifteenth PMOS load path coupled between the sixth PMOS load path and the ground node, anda fifteenth PMOS gate;a ninth NMOS transistor comprising a ninth NMOS load path coupled between the fifteenth PMOS load path and the ground node; anda sixteenth PMOS transistor comprising a sixteenth PMOS gate coupled to the fifteenth PMOS gate, anda sixteenth PMOS load path coupled between the second input node and the ground node. 17. The circuit of claim 16, further comprising: a tenth NMOS transistor comprising a tenth NMOS load path coupled between the sixteenth PMOS transistor and the ground node;an eleventh NMOS transistor comprising an eleventh NMOS gate coupled to the tenth NMOS load path; anda seventeenth PMOS transistor comprising a seventeenth PMOS load path coupled between the supply node and an eleventh NMOS load path. 18. The circuit of claim 16, further comprising: a seventh PMOS transistor comprising a seventh PMOS gate coupled to the sixth PMOS gate, anda seventh PMOS load path coupled to the supply node;a fourth NMOS transistor comprising a fourth NMOS load path coupled between the seventh PMOS load path and the ground node; andan eighth PMOS transistor comprising an eighth PMOS load path coupled to the seventh PMOS load path and to the fourth NMOS load path, andan eighth PMOS gate. 19. The circuit of claim 18, further comprising: a ninth PMOS transistor comprising a ninth PMOS load path coupled to the supply node, anda ninth PMOS gate coupled to the fourth PMOS gate;a third resistor coupled between the ninth PMOS load path and the ground node; anda tenth PMOS transistor comprising a tenth PMOS gate, anda tenth PMOS load path coupled between the ninth PMOS load path and the third resistor. 20. The circuit of claim 19, wherein the tenth PMOS gate is coupled to the eighth PMOS gate.
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이 특허에 인용된 특허 (18)
Can Sumer, Bandgap reference voltage circuit with PTAT current source.
Lakshmikumar Kadaba R. (Wescosville PA) Nagaraj Krishnaswamy (Somerville NJ) Rich David Arthur (Woodmere NY) Tham Khong-Meng (Reading PA), PTAT current source.
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