Apparatus for growing carbon nanotube forests, and generating nanotube structures therefrom, and method
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B29C-065/00
C01B-031/02
B82Y-030/00
B82Y-040/00
D01F-009/133
B29C-065/78
B29K-101/00
출원번호
US-0501046
(2014-09-30)
등록번호
US-9815697
(2017-11-14)
발명자
/ 주소
Lemaire, Alexander B.
Lemaire, Charles A.
Stordal, Leif T.
Thomforde, Dale J.
출원인 / 주소
GrandNano, LLC
대리인 / 주소
Lemaire, Charles A.
인용정보
피인용 횟수 :
0인용 특허 :
94
초록▼
The present invention provides apparatus and methods for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom. In some embodiments, an interior-flow substrate includes a porous surface and one or more interior passages that provide reactant gas t
The present invention provides apparatus and methods for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom. In some embodiments, an interior-flow substrate includes a porous surface and one or more interior passages that provide reactant gas to an interior portion of a densely packed nanotube forest as it is growing. In some embodiments, a continuous-growth furnace is provided that includes an access port for removing nanotube forests without cooling the furnace substantially. In other embodiments, a nanotube film can be pulled from the nanotube forest without removing the forest from the furnace. A nanotube film loom is described. An apparatus for building layers of nanotube films on a continuous web is described.
대표청구항▼
1. An apparatus for producing nanotubes, the apparatus comprising: a furnace;a reaction chamber positioned within the furnace;a gas-supply system that supplies a carbon-bearing precursor gas to an interior of the substrate,a substrate configured to be positioned within the reaction chamber in the fu
1. An apparatus for producing nanotubes, the apparatus comprising: a furnace;a reaction chamber positioned within the furnace;a gas-supply system that supplies a carbon-bearing precursor gas to an interior of the substrate,a substrate configured to be positioned within the reaction chamber in the furnace, wherein the substrate includes a cylindrical porous growth surface on which a first nanotube forest is grown in a radial direction, wherein the apparatus is configured to supply a carbon-bearing precursor gas through the cylindrical porous growth surface from an interior of the cylindrical substrate to grow the first nanotube forest on the cylindrical growth surface of the substrate while the substrate is positioned in the reaction chamber;a take-up reel arranged to turn to continuously collect nanotube film from the substrate;a servo motor arranged to rotate the substrate; andan optical sensor connected to the servo motor to keep a front edge of nanotube forest at an optimal position and angle for pulling the nanotube film. 2. The apparatus of claim 1, further comprising: a cool-chamber box surrounding the take-up reel; andan access port that connects the reaction chamber to the cool-chamber box; anda positive-pressure gas inlet that provides gas into the cool-chamber box to maintain a positive pressure within the cool-chamber box. 3. A method for producing nanotubes, the method comprising: providing a porous substrate positioned within a reaction chamber in a furnace, wherein the substrate includes a cylindrical growth surface on which a first nanotube forest is grown in a radial direction, wherein the apparatus is configured to supply a carbon-bearing precursor gas through the cylindrical porous growth surface from an interior of the cylindrical substrate to grow the first nanotube forest on the cylindrical growth surface of the substrate while the substrate is positioned in the reaction chamber, and wherein the porous substrate includes a porous ceramic having an anodic-etched polysilicon coating that in turn has a metal coating;supplying a carbon-bearing precursor gas to an interior of the substrate from a gas-supply system;growing, in a radial direction, a first nanotube forest on the cylindrical growth surface of the substrate; andremoving nanotubes from the substrate, in a tangential direction relative to the cylindrical growth surface, from outside the reaction chamber through an access port while the substrate is in the reaction chamber. 4. The method of claim 3, wherein the providing of the porous substrate includes: providing a porous ceramic cylindrical substrate;coating the porous ceramic cylindrical substrate with polysilicon;treating the polysilicon coating with an anodic etch in ethanol and hydrofluoric acid to create a nanoporous surface; anddepositing a metal catalyst on the anodic-etched polysilicon. 5. The method of claim 3, further comprising: rotating the substrate having the cylindrical growth surface such that a film of the nanotubes from the first nanotube forest is pulled from a leading edge of the nanotube forest that is kept in position as the substrate rotates. 6. The method of claim 3, wherein the nanotubes are carbon nanotubes, wherein the removing of the nanotubes includes pulling the carbon nanotubes from the first nanotube forest as a film consisting essentially of carbon nanotubes substantially aligned in a first direction. 7. The method of claim 3, further comprising: collecting nanotube film from the substrate onto a take-up reel while turning the take-up reel to keep a front edge of nanotube forest at a position such that an acute outward angle for pulling the nanotube film is maintained relative to a tangent to the cylindrical growth surface of the substrate. 8. The method of claim 3, further comprising: pulling a plurality of nanotube films, wherein each one of the plurality of nanotube films is pulled from a respective nanotube forest; andstacking the plurality of nanotube films to form the composite nanotube film. 9. The method of claim 8, wherein the pulling of the plurality of nanotube films includes: adhering a first end of each respective one of the plurality of nanotube films to a respective one of a first plurality of substrates;adhering a second end of each respective one of the plurality of nanotube films to a respective one of a second plurality of substrates;stacking the first plurality of substrates on each other and stacking the second plurality of substrates on each other such that the respective plurality of nanotube films are held parallel to one another; androtating the stacked first plurality of substrates relative to a plane of the nanotube films such that the plurality of parallel nanotube films are moved into contact with one another. 10. The method of claim 8, wherein the plurality of nanotube films includes: a first nanotube film consisting essentially of nanotubes pulled as a film from a first nanotube forest, wherein the nanotubes of the first nanotube film are substantially aligned in a first direction, the first direction being not parallel to and at a first angle relative to a length-wise edge of the web; anda second nanotube film consisting essentially of nanotubes pulled as a film from a second nanotube forest, wherein the nanotubes of the second nanotube film are substantially aligned in a second direction, the second direction being not parallel to and at a second angle relative to the length-wise edge of the web, wherein the second angle is different than the first angle, and wherein nanotubes of the second nanotube film are in direct contact with nanotubes of the first nanotube film. 11. An apparatus for producing nanotubes, the apparatus comprising: a substrate configured to be positioned within a reaction chamber in a furnace, wherein the substrate includes a cylindrical porous growth surface on which a first nanotube forest is grown in a radial direction, wherein the apparatus is configured to supply a carbon-bearing precursor gas through the cylindrical porous growth surface from an interior of the cylindrical substrate to grow the first nanotube forest on the cylindrical growth surface of the substrate while the substrate is positioned in the reaction chamber, and wherein the substrate includes a porous ceramic having an anodic-etched polysilicon coating that in turn has a coating that includes a metal. 12. The apparatus of claim 11, further comprising: the furnace;the reaction chamber positioned within the furnace; anda gas-supply system that supplies a carbon-bearing precursor gas to an interior of the substrate, wherein the apparatus is configured to use the carbon-bearing precursor gas to grow the first nanotube forest on the cylindrical growth surface of the substrate while the substrate is positioned in the reaction chamber,wherein the reaction chamber includes an access port that allows access to the substrate from outside the reaction chamber while the substrate is in the reaction chamber, andwherein the apparatus removes nanotubes from the first nanotube forest through the access port while the substrate is in the reaction chamber. 13. The apparatus of claim 12, wherein the substrate includes a plurality of interior passageways leading from the gas-supply system to the porous growth surface. 14. The apparatus of claim 12, wherein the substrate includes a plurality of interior passageways leading from the gas-supply system to the porous growth surface, wherein each of the plurality of passageways includes a plurality of successively smaller branches. 15. The apparatus of claim 12, wherein the nanotubes are carbon nanotubes, wherein the apparatus removes the carbon nanotubes from the first nanotube forest as a film that has a length substantially greater than its length, the film consisting essentially of carbon nanotubes substantially aligned in a first direction. 16. The apparatus of claim 12, further comprising a plurality of vanes to direct exhaust gas radially outward from the cylindrical growth surface. 17. The apparatus of claim 12, further comprising a plurality of exhaust vents to receive exhaust gas outward from the cylindrical growth surface. 18. The apparatus of claim 12, further comprising a take-up reel arranged to turn to continuously collect nanotube film from the substrate that includes the cylindrical porous growth surface. 19. The apparatus of claim 11, further comprising: means for supplying a carbon-bearing precursor gas to an interior of the substrate from a gas-supply system;means for growing, in a radial direction, a first nanotube forest on the cylindrical growth surface of the substrate; andmeans for removing nanotubes from the substrate from outside the reaction chamber through an access port while the substrate is in the reaction chamber. 20. The apparatus of claim 11, wherein the coating that includes a metal includes iron that is oxidized.
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