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Latch-up suppression and substrate noise coupling reduction through a substrate back-tie for 3D integrated circuits 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G06F-017/50
  • G06F-011/22
  • H01L-021/768
  • H01L-023/48
  • H01L-023/00
출원번호 US-0875593 (2015-10-05)
등록번호 US-9817928 (2017-11-14)
발명자 / 주소
  • Kawa, Jamil
  • Moroz, Victor
출원인 / 주소
  • SYNOPSYS, INC.
대리인 / 주소
    Haynes Beffel & Wolfeld LLP
인용정보 피인용 횟수 : 0  인용 특허 : 34

초록

Roughly described, an integrated circuit device has a conductor extending entirely through the substrate, connected on one end to the substrate topside surface and on the other end to the substrate backside surface. In various embodiments the conductor is insulated from all RDL conductors on the bac

대표청구항

1. A method for designing an integrated circuit device, comprising: using a computer system, providing a simulation model for a three-dimensional integrated circuit device implementing an integrated circuit design, the device having a first chip superposing a second chip, the first chip having a fir

이 특허에 인용된 특허 (34)

  1. Hsu, Kuo-Ching; Chen, Chen-Shien, Backside connection to TSVs having redistribution lines.
  2. Ausserlechner,Udo; Motz,Mario, Concept of compensating for piezo influences on integrated circuitry.
  3. Ausserlechner,Udo; Motz,Mario, Concept of compensating for piezo influences on integrated circuitry.
  4. Currie,Matthew T., Control of strain in device layers by selective relaxation.
  5. Lin, Ming-Ren; An, Judy Xilin; Krivokapic, Zoran; Tabery, Cyrus E.; Wang, Haihong; Yu, Bin, Double and triple gate MOSFET devices and methods for making same.
  6. Sohn Hai-jeong (Suwon KRX) Song Young-hee (Seoul KRX), Down-bonded lead-on-chip type semiconductor device.
  7. Lin,John; Phan,Tony T.; Hower,Philip L.; Loftin,William C.; Mollat,Martin B., Integrated circuit having a transistor level top side wafer contact and a method of manufacture therefor.
  8. King, Tsu Jae; Moroz, Victor, Integrated circuit on corrugated substrate.
  9. King,Tsu Jae; Moroz,Victor, Integrated circuit on corrugated substrate.
  10. Camacho, Zigmund R.; Merilo, Dioscoro A.; Bathan, Henry D.; Espiritu, Emmanuel A., Leadframe interposer over semiconductor die and TSV substrate for vertical electrical interconnect.
  11. Dennison, Charles, METHOD FOR FORMING PHASE-CHANGE MEMORY BIPOLAR ARRAY UTILIZING A SINGLE SHALLOW TRENCH ISOLATION FOR CREATING AN INDIVIDUAL ACTIVE AREA REGION FOR TWO MEMORY ARRAY ELEMENTS AND ONE BIPOLAR BASE CONTA.
  12. Lin,Xi Wei; Pramanik,Dipankar; Moroz,Victor, Managing integrated circuit stress using dummy diffusion regions.
  13. Kang,Hee Soo; Lee,Chul; Kim,Tae Yong; Park,Dong Gun; Ahn,Young Joon; Lee,Choong Ho; Han,Sang Yeon, Method for forming a FinFET by a damascene process.
  14. Yu, Bin; An, Judy Xilin; Tabery, Cyrus E.; Wang, Haihong, Method for forming multiple structures in a semiconductor device.
  15. Hughes,Peter William; Morton,Shannon Vance; Monk,Trevor Kenneth, Method for optimising transistor performance in integrated circuits.
  16. Lin, Xi Wei; Moroz, Victor; Pramanik, Dipankar, Method of correlating silicon stress to device instance parameters for circuit simulation.
  17. Fitzgerald, Eugene A.; Gerrish, Nicole, Method of fabricating CMOS inverter and integrated circuits utilizing strained surface channel MOSFETS.
  18. Chidambarrao,Dureseti; Jordan,Donald L.; McCullen,Judith H.; Onsongo,David M.; Wagner,Tina; Williams,Richard Q., Methodology for layout-based modulation and optimization of nitride liner stress effect in compact models.
  19. King, Tsu-Jae; Moroz, Victor, Methods of designing an integrated circuit on corrugated substrate.
  20. Morrow, Patrick; List, R. Scott; Kim, Sarah E., Methods of forming backside connections on a wafer stack.
  21. Bhattacharyya,Arup, Methods of forming transistor constructions.
  22. Eliyahou Harari ; Jack H. Yuan ; George Samachisa, Processing techniques for making a dual floating gate EEPROM cell array.
  23. Hieda,Katsuhiko; Hagishima,Daisuke, Semiconductor device and method of manufacture thereof.
  24. Rahman, Arifur; Trimberger, Stephen M., Semiconductor device having structures for reducing substrate noise coupled from through die vias.
  25. Currie, Matthew; Lochtefeld, Anthony; Hammond, Richard; Fitzgerald, Eugene, Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same.
  26. Fukumi, Masayuki, Semiconductor substrate and method for fabricating the same.
  27. Li, Chou H., Solid state device.
  28. Bhuwalka, Krishna Kumar; Doornbos, Gerben; Passlack, Matthias, Split-channel transistor and methods for forming the same.
  29. Ito, Sachiyo; Hasunuma, Masahiko; Kaneko, Hisashi, Stress analysis method, wiring structure design method, program, and semiconductor device production method.
  30. Fang Hao (Cupertino CA) Fang Peng (Milpitas CA) Yue John T. (Los Altos CA), Test method for predicting hot-carrier induced leakage over time in short-channel IGFETS and products designed in accord.
  31. Fang Hao (Cupertino CA) Fang Peng (Milpitas CA) Yue John T. (Los Altos CA), Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accord.
  32. Han, Kwon Whan, Through-silicon via and method for forming the same.
  33. Chau,Robert S.; Doyle,Brian S.; Kavalieros,Jack; Barlage,Douglas; Datta,Suman, Tri-gate devices and methods of fabrication.
  34. Hareland, Scott A.; Chau, Robert S.; Doyle, Brian S.; Datta, Suman; Jin, Been-Yih, Tri-gate transistor device with stress incorporation layer and method of fabrication.
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