Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.
대표청구항▼
1. A structure comprising: a substrate comprising a first crystalline semiconductor material, the substrate having a major top surface and a recess portion, the recess portion including faceted surfaces of the first crystalline semiconductor material;a dielectric layer disposed over the substrate, t
1. A structure comprising: a substrate comprising a first crystalline semiconductor material, the substrate having a major top surface and a recess portion, the recess portion including faceted surfaces of the first crystalline semiconductor material;a dielectric layer disposed over the substrate, the dielectric layer having an opening to the substrate that defines a first portion of the first crystalline semiconductor material, the first portion including faceted surfaces of the first crystalline semiconductor material; anda second semiconductor material disposed in the opening, the second semiconductor material being lattice mismatched to the first crystalline semiconductor material, the second semiconductor material comprising a lattice defect, the lattice defect terminating at a first sidewall of the opening, the first sidewall defining a first angle with at least one of the faceted surfaces of the first crystalline semiconductor material, the first angle being less than 90°, the first sidewall extending above and away from the major top surface of the substrate. 2. The structure of claim 1, wherein the faceted surfaces of the substrate are (111) surfaces of the substrate, the substrate comprising silicon. 3. The structure of claim 1, wherein the second semiconductor material has a top surface coplanar with a top surface of the dielectric layer. 4. A structure comprising: a substrate comprising a first semiconductor material;an insulator layer disposed over a top surface of the substrate and defining a trench having two sidewalls, each of the two sidewalls comprising a sloped sidewall portion extending in a direction away from the other sloped sidewall portion, each of the two sloped sidewall portions having a first angle relative a line perpendicular to a top surface of the substrate, the first angle being from 6° to 12° or from 25° to 40°; anda second semiconductor material disposed in the trench, the second semiconductor material being lattice mismatched to the first semiconductor material, wherein a portion of the second semiconductor material comprises lattice defects, a first plurality of the lattice defects terminating at the sidewall, each of the first plurality of lattice defects terminating at the sidewall at an angle a with the sidewall, the angle being 45° or less. 5. The structure of claim 4, wherein each of the first plurality of lattice defects have a first portion and a second portion, the first portion being in a first direction, the second portion being in a second direction different from the first direction and non-parallel to the top surface of the substrate, the second portions of the first plurality of lattice defects terminating at the two sidewalls. 6. The structure of claim 4, wherein the insulator layer has a height in a direction perpendicular to the top surface of the substrate, the trench having a length in a direction parallel to the top surface of the substrate, the length being greater than the height. 7. The structure of claim 4, wherein the insulator layer has a height in a direction perpendicular to the top surface of the substrate, the trench having a width in a direction parallel to the top surface of the substrate, the width being equal to or less than twice the height. 8. The structure of claim 4, wherein the trench has a length in a direction parallel to the top surface of the substrate, the trench having a width in a direction parallel to the top surface of the substrate, the length being at least twice the width. 9. The structure of claim 4, wherein the second semiconductor material comprises a group IV element or compound, a III-V compound, or a II-VI compound. 10. The structure of claim 9, wherein the substrate comprises germanium and/or silicon. 11. A method comprising: forming a dielectric sidewall on a substrate, the substrate comprising a first crystalline semiconductor material and having a top surface, the dielectric sidewall comprises at least a lower portion that is sloped and an upper portion that is perpendicular to the top surface of the substrate; andepitaxially growing a second crystalline semiconductor material on the substrate and adjoining the dielectric sidewall, the second crystalline semiconductor material being lattice mismatched to the first crystalline semiconductor material, a dislocation in the second crystalline semiconductor material arising from the lattice mismatch, the dislocation being directed to the dielectric sidewall in a direction approximately perpendicular to a growth front of the second crystalline semiconductor material, the dislocation terminating at the dielectric sidewall in the direction, the dislocation defining an angle a with the dielectric sidewall, the angle being 45° or less. 12. The method of claim 11, wherein the direction is within 10° of perpendicular to the growth front. 13. The method of claim 11, wherein the growth front comprises a facet. 14. The method of claim 11, wherein the growth front comprises a convex surface. 15. The method of claim 11 further comprising: forming a dielectric layer over the top surface of the substrate, an opening being defined through the dielectric layer, the dielectric sidewall being a sidewall of the opening. 16. The structure of claim 1, wherein the faceted surfaces are recessed from the major top surface of the substrate. 17. The structure of claim 1, wherein the dielectric layer contacts a bottommost surface of the recess portion of the first crystalline semiconductor material. 18. The method of claim 11, wherein the dislocation terminates at the upper portion the dielectric sidewall. 19. The method of claim 11, wherein the second crystalline semiconductor material comprises a group IV element or compound, a III-V compound, or a II-VI compound. 20. The method of claim 11, wherein the first crystalline semiconductor material comprises germanium and/or silicon.
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