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Densification of silicon carbide film using remote plasma treatment

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/02
  • H01L-029/16
출원번호 US-0382137 (2016-12-16)
등록번호 US-9837270 (2017-12-05)
발명자 / 주소
  • Varadarajan, Bhadri N.
  • Gong, Bo
  • Yuan, Guangbi
  • Gui, Zhe
  • Lai, Fengyuan
출원인 / 주소
  • Lam Research Corporation
대리인 / 주소
    Weaver Austin Villeneuve & Sampson LLP
인용정보 피인용 횟수 : 2  인용 특허 : 87

초록

Provided are methods and apparatuses for densifying a silicon carbide film using remote plasma treatment. Operations of remote plasma deposition and remote plasma treatment of the silicon carbide film alternatingly occur to control film density. A first thickness of silicon carbide film is deposited

대표청구항

1. A method of densifying a silicon carbide film, the method comprising: providing a substrate in a reaction chamber;depositing a first thickness of a silicon carbide material on the substrate in a first step of a process of depositing a silicon carbide film;exposing the first thickness of the silic

이 특허에 인용된 특허 (87)

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이 특허를 인용한 특허 (2)

  1. Chandrashekar, Anand; Jeng, Esther; Humayun, Raashina; Danek, Michal; Gao, Juwen; Wang, Deqi, Feature fill with nucleation inhibition.
  2. Yu, Yongsik; van Schravendijk, Bart J.; Shankar, Nagraj; Varadarajan, Bhadri N., Staircase encapsulation in 3D NAND fabrication.
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