Peeling method and method of manufacturing semiconductor device
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-051/00
B32B-007/06
B32B-043/00
G02F-001/1368
H01L-021/762
H01L-027/12
H01L-027/32
H01L-029/66
H01L-029/786
H01L-051/56
G02F-001/136
H01L-021/322
H01L-051/52
출원번호
US-0143791
(2016-05-02)
등록번호
US-9842994
(2017-12-12)
우선권정보
JP-2001-251870 (2001-08-22)
발명자
/ 주소
Takayama, Toru
Maruyama, Junya
Yamazaki, Shunpei
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Fish & Richardson P.C.
인용정보
피인용 횟수 :
0인용 특허 :
148
초록▼
There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact proper
There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.
대표청구항▼
1. A method of manufacturing a display device comprising: forming an organic material layer over a first substrate;forming a first insulating film over the organic material layer;forming a thin film transistor over the first insulating film, the thin film transistor comprising a semiconductor layer
1. A method of manufacturing a display device comprising: forming an organic material layer over a first substrate;forming a first insulating film over the organic material layer;forming a thin film transistor over the first insulating film, the thin film transistor comprising a semiconductor layer including a channel forming region, a gate electrode and a gate insulating layer between the gate electrode and the semiconductor layer;forming a second insulating film over the thin film transistor;forming a pixel electrode over the second insulating film, wherein the pixel electrode is electrically connected to the thin film transistor;forming a light emitting layer over the pixel electrode, the light emitting layer comprising an organic material;forming a second electrode over the light emitting layer;forming a third insulating film over the second electrode;attaching a first resin film to the third insulating film by an adhesive layer between the first resin film and the third insulating film;irradiating the organic material layer with a laser light through the first substrate after attaching the first resin film;separating the first substrate from the organic material layer after the irradiating with the laser light; andattaching a second resin film to the organic material layer by a second adhesive layer between the second resin film and the organic material layer. 2. The method according to claim 1, wherein the organic material layer has a compressive stress. 3. The method according to claim 1, further comprising a second material layer over the first substrate before forming the organic material layer, wherein the organic material layer has a compressive stress and the second material layer has a tensile stress. 4. The method according to claim 1, wherein the laser light is directed to a portion of the organic material layer, the portion being distant from an edge of the organic material layer. 5. The method according to claim 1, wherein only a portion of the organic material layer is irradiated with the laser light. 6. A method of manufacturing a display device comprising: forming an organic material layer over a first substrate;forming a first insulating film over the organic material layer;forming a thin film transistor over the first insulating film, the thin film transistor comprising a semiconductor layer including a channel forming region, a gate electrode and a gate insulating layer between the gate electrode and the semiconductor layer;forming a second insulating film over the thin film transistor;forming a pixel electrode over the second insulating film, wherein the pixel electrode is electrically connected to the thin film transistor;irradiating the organic material layer with a linear shape laser light through the first substrate, wherein the organic material layer is scanned with the linear shape laser light along a first direction;separating the first substrate from the organic material layer after the irradiating with the linear shape laser light, wherein the step of separating the first substrate is performed along the first direction; andattaching a resin film to the organic material layer by an adhesive layer between the resin film and the organic material layer. 7. The method according to claim 6, wherein the organic material layer has a compressive stress. 8. The method according to claim 6, further comprising a second material layer over the first substrate before forming the organic material layer, wherein the organic material layer has a compressive stress and the second material layer has a tensile stress. 9. The method according to claim 6, wherein the linear shape laser light is directed to a portion of the organic material layer, the portion being distant from an edge of the organic material layer. 10. A method of manufacturing a display device comprising: forming an organic material layer over a first substrate;forming a first insulating film over the organic material layer;forming a thin film transistor over the first insulating film, the thin film transistor comprising a semiconductor layer including a channel forming region, a gate electrode and a gate insulating layer between the gate electrode and the semiconductor layer;forming a second insulating film over the thin film transistor;forming a pixel electrode over the second insulating film, wherein the pixel electrode is electrically connected to the thin film transistor;forming a light emitting layer over the pixel electrode, the light emitting layer comprising an organic material;forming a second electrode over the light emitting layer;forming a third insulating film over the second electrode, the third insulating film comprising a material selected from the group consisting of aluminum nitride, aluminum nitride oxide, aluminum oxynitride, and aluminum oxide;attaching a first resin film to the third insulating film by an adhesive layer between the first resin film and the third insulating film;irradiating the organic material layer with a laser light through the first substrate after attaching the first resin film;separating the first substrate from the organic material layer after the irradiating with the laser light; andattaching a second resin film to the organic material layer by a second adhesive layer between the second resin film and the organic material layer. 11. The method according to claim 10, wherein the organic material layer has a compressive stress. 12. The method according to claim 10, further comprising a second material layer over the first substrate before forming the organic material layer, wherein the organic material layer has a compressive stress and the second material layer has a tensile stress. 13. The method according to claim 10, wherein the laser light is directed to a portion of the organic material layer, the portion being distant from an edge of the organic material layer. 14. The method according to claim 10, wherein only a portion of the organic material layer is irradiated with the laser light.
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