[특허]Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing

Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/31 H01L-021/3105 H01L-021/316 H01L-021/02 H01L-021/027 H01L-021/308 C23C-016/40 C23C-016/56
출원번호	US-0280049 (2016-09-29)
등록번호	US-9847221 (2017-12-19)
발명자 / 주소	McLaughlin, Kevin M. Pharkya, Amit Reddy, Kapu Sirish
출원인 / 주소	Lam Research Corporation
대리인 / 주소	Weaver Austin Villeneuve & Sampson LLP
인용정보	피인용 횟수 : 0 인용 특허 : 206

초록 ▼

Silicon oxide layer is deposited on a semiconductor substrate by PECVD at a temperature of less than about 200° C. and is treated with helium plasma to reduce stress of the deposited layer to an absolute value of less than about 80 MPa. Plasma treatment reduces hydrogen content in the silicon oxide layer, and leads to low stress films that can also have high density and low roughness. In some embodiments, the film is deposited on a semiconductor substrate that contains one or more temperature-sensitive layers, such as layers of organic material or spin-on dielectric that cannot withstand temperatures of greater than 250° C. In some embodiments the silicon oxide film is deposited to a thickness of between about 100-200 Å, and is used as a hardmask layer during etching of other layers on a semiconductor substrate.

대표청구항 ▼

1. A method for processing a semiconductor substrate, the method comprising: (a) providing a semiconductor substrate to a PECVD process chamber;(b) depositing a layer of silicon oxide on the semiconductor substrate by PECVD at a temperature of less than about 200° C., wherein the depositing comprises flowing a silicon-containing precursor and an oxygen-containing reactant into the PECVD process chamber and forming a plasma;(c) stopping flow of the silicon-containing precursor after deposition; and(d) treating the deposited layer of silicon oxide with a plasma at a temperature of less than about 200° C. to thereby modify the deposited layer and to reduce the stress of the deposited layer to an absolute value of less than about 80 MPa. 2. The method of claim 1, wherein the method comprises increasing power that is used for plasma generation from a first power level used in (b) to a second, greater power level used in (d). 3. The method of claim 1, wherein (d) comprises treating the deposited layer of silicon oxide with a plasma formed in a process gas consisting essentially of helium. 4. The method of claim 1, wherein the semiconductor substrate provided in (a) comprises one or more layers of temperature-sensitive material that is sensitive to temperatures of 250° C. and higher. 5. The method of claim 4, wherein the temperature-sensitive material is an organic material. 6. The method of claim 4, wherein the temperature-sensitive material is a spin-on dielectric. 7. The method of claim 1, wherein the deposition of the layer of silicon oxide is performed at a temperature of less than about 180° C. 8. The method of claim 1, wherein the absolute value of stress of the silicon oxide layer obtained after (d) is less than about 50 MPa. 9. The method of claim 1, wherein the absolute value of stress of the silicon oxide layer obtained after (d) is less than about 10 MPa. 10. The method of claim 1, wherein the plasma treatment of the layer of silicon oxide in (d) reduces the content of hydrogen in the layer of silicon oxide. 11. The method of claim 1, wherein the silicon oxide obtained after plasma treatment in (d) does not have a Si—H peak at 2200-2300 cm−1 on an IR spectrum. 12. The method of claim 1, wherein the method comprises maintaining the plasma after (b) and before (c). 13. The method of claim 1, further comprising purging the PECVD process chamber after (b) and before (d) to remove the silicon-containing precursor from the process chamber. 14. The method of claim 1, wherein (b) further comprises flowing an inert gas into the PECVD process chamber. 15. The method of claim 14, wherein the silicon-containing precursor is SiH4, the oxygen-containing reactant is CO2 and the inert gas is He. 16. The method of claim 1, wherein (b) is performed at a pressure of between about 1.5-5 Torr. 17. The method of claim 1, wherein (b) and (d) are performed in the same PECVD process chamber at substantially the same pressure and temperature. 18. The method of claim 1, wherein (b)-(d) are performed at a first station of a multi-station PECVD apparatus, wherein the method further comprises transferring the semiconductor substrate to a second station of a multi-station PECVD apparatus after (d), and repeating (b)-(d) in the second station of the multi-station PECVD apparatus. 19. The method of claim 1, further comprising: applying photoresist to the semiconductor substrate; exposing the photoresist to light;patterning the photoresist and transferring the pattern to the semiconductor substrate; andselectively removing the photoresist from the semiconductor substrate. 20. A method for processing a semiconductor substrate, the method comprising: (a) providing a semiconductor substrate to a PECVD process chamber;(b) depositing a layer of silicon oxide on the semiconductor substrate by PECVD at a temperature of less than about 200° C.;(c) stopping flow of the silicon-containing precursor after deposition; and(d) treating the deposited layer of silicon oxide with UV light having a wavelength of 180 nm or less at a temperature of less than about 200° C. to modify the deposited layer and to reduce the stress of the deposited layer to an absolute value of less than about 80 MPa.

이 특허에 인용된 특허 (206)

Li,Lihua; Huang,Tzu Fang; Sugiarto, legal representative,Jerry; Xia,Li Qun; Lee,Peter Wai Man; M'Saad,Hichem; Cui,Zhenjiang; Park,Sohyun; Sugiarto, deceased,Dian, Adhesion improvement for low k dielectrics.
상세보기
Wheatly John A. (Midland MI) Motter Gregg A. (Midland MI), All-polymeric cold mirror.
상세보기
Lee Yong-Kwan,KRX ; Yoon Nam-Sik,KRX ; Kim Sung-Sik,KRX ; Lee Pyung-Woo,KRX ; Chang Hong-Young,KRX, Antenna device for generating inductively coupled plasma.
상세보기
Shrinivasan, Krishnan; Banerjee, Souvik; Juarez, Francisco; Reinhardt, Karen A.; Gopinath, Sanjay, Apparatus and methods for processing semiconductor substrates using supercritical fluids.
상세보기
Iwasaki Masanobu (Hyogo JPX) Itoh Hiromi (Hyogo JPX) Tokui Akira (Hyogo JPX) Mitsui Katsuyoshi (Hyogo JPX) Tsukamoto Katsuhiro (Hyogo JPX), Apparatus for forming a thin film on surface of semiconductor substrate.
상세보기
Maeda Kazuo (Tokyo JPX) Tokumasu Noboru (Tokyo JPX) Nishimoto Yuhko (Tokyo JPX), Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device.
상세보기
Yagi Takayuki (Machida JPX) Komatsu Toshiyuki (Hiratsuka JPX) Sato Yasue (Kawasaki JPX) Kawate Shinichi (Machida JPX), Apparatus for preparing a semiconductor device, photo treatment apparatus, pattern forming apparatus and fabrication app.
상세보기
Yamazaki,Shunpei; Takenouchi,Akira; Takemura,Yasuhiko, Apparatus for processing a semiconductor.
상세보기
Butterbaugh,Jeffery W.; Gray,David C.; Fayfield,Robert T.; Siefering,Kevin; Heitzinger,John; Hiatt,Fred C., Apparatus for surface conditioning.
상세보기
Keane Anthony R. A. (Webster NY) Hauer Steven E. (Berlin NJ), Automatic impedance matching apparatus and method.
상세보기
Janakiraman, Karthik; Suarez, Edwin C., Blocker plate by-pass for remote plasma clean.
상세보기
Zhao Jun (Milpitas CA) Cho Tom (San Francisco CA) Dornfest Charles (Fremont CA) Wolff Stefan (Sunnyvale CA) Fairbairn Kevin (Saratoga CA) Guo Xin S (Mountain View CA) Schreiber Alex (Santa Clara CA) , CVD Processing chamber.
상세보기
Weidman, Timothy; Nault, Michael P; Chang, Josephine J, Capping layer for extreme low dielectric constant films.
상세보기
Varadarajan, Bhadri N.; McLaughlin, Kevin M.; van Schravendijk, Bart, Carbon containing low-k dielectric constant recovery using UV treatment.
상세보기
Andideh, Ebrahim; Peterson, Kevin L.; Bielefeld, Jeffery D., Carbon doped oxide deposition.
상세보기
Conti, Richard A.; Dev, Prakash Chimanlal; Dobuzinsky, David M.; Edelstein, Daniel C.; Lee, Gill Y.; Low, Kia-Seng; Shafer, Padraic C.; Simpson, Alexander; Wrschka, Peter, Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates.
상세보기
Varadarajan, Bhadri; Jiang, Gengwei; Reddy, Sirish K.; Sims, James S., Cascaded cure approach to fabricate highly tensile silicon nitride films.
상세보기
Varadarajan, Bhadri; Jiang, Gengwei; Reddy, Sirish K.; Sims, James S., Cascaded cure approach to fabricate highly tensile silicon nitride films.
상세보기
Shrinivasan,Krishnan; Gentile,Stephen; Woytowitz,Peter; Roham,Sassan; Kamian,George, Cast pedestal with heating element and coaxial heat exchanger.
상세보기
McDaniel Max P. (Bartlesville OK), Chemical dehydroxylation of silica.
상세보기
Ting Chiu H. (Saratoga CA) Rucker Thomas G. (Palo Alto CA) Sobczak Zbigniew P. (Andover NJ), Chemical modification of spin-on glass for improved performance in IC fabrication.
상세보기
Russell Kathleen (Santa Clara CA) Robles Stuardo (Sunnyvale CA) Nguyen Bang C. (Fremont CA) Sivaramakrishnan Visweswaren (Cupertino CA), Chemical vapor deposition reactor system and integrated circuit.
상세보기
Naritoshi Ozawa JP; Xiaoming Qiu JP; Satoshi Ohkawara JP, Cleaning apparatus.
상세보기
Lee, Chung J.; Kumar, Atul, Composite polymer dielectric film.
상세보기
Chyi Chern ; Michal Danek ; Marvin Liao SG; Roderick C. Mosely ; Karl Littau ; Ivo Raaijmakers ; David C. Smith, Construction of a film on a semiconductor wafer.
상세보기
Draeger, Nerissa S.; Ray, Gary William, Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles.
상세보기
Draeger,Nerissa S.; Gray,Gary William, Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles.
상세보기
James H. Glownia ; Robert J. von Gutfeld, Curing of sealants using multiple frequencies of radiation.
상세보기
Zheng Bo ; Chen Ling ; Mak Alfred ; Chang Mei, Deposition of copper with increased adhesion.
상세보기
Stern,Lewis; Albright,John, Deposition of tensile and compressive stressed materials.
상세보기
Gaynor Justin F., Dielectric layer including silicalite crystals and binder and method for producing same for microelectronic circuits.
상세보기
Kloster, Grant M.; Staines, David W.; Leu, Jihperng, Dielectric material treatment.
상세보기
Retschke, Wolfgang; Senf, Wolfgang; Katzir, Yigal, Direct pattern writer.
상세보기
Pu, Bryan Y.; Shan, Hongching; Bjorkman, Claes; Doan, Kenny; Welch, Mike; Mett, Richard Raymond, Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply.
상세보기
Buazza Omar M., El apparatus for eyeglass lens curing using ultraviolet light.
상세보기
Gallagher, Michael K.; You, Yujian, Electronic device manufacture.
상세보기
Patrick Roger (Santa Clara CA) Bose Frank (Wettingen CHX), End-point detection in plasma etching by monitoring radio frequency matching network.
상세보기
Yoshimi Shioya JP; Kouichi Ohira JP; Kazuo Maeda JP; Tomomi Suzuki JP; Hiroshi Ikakura JP; Youichi Yamamoto JP; Yuichiro Kotake JP; Shoji Ohgawara JP; Makoto Kurotobi JP, Fabrication of a semiconductor device with an interlayer insulating film formed from a plasma devoid of an oxidizing agent.
상세보기
Konishi, Nobuo; Iwashita, Mitsuaki; Ohno, Hiroki; Kawamura, Shigeru; Sugiura, Masahito, Film forming method by radiating a plasma on a surface of a low dielectric constant film.
상세보기
Gupta Anand ; Bhan Mohan ; Subrahmanyam Sudhakar, Film to tie up loose fluorine in the chamber after a clean process.
상세보기
Ohmi, Tadahiro; Hirayama, Masaki, Fluorine-containing carbon film forming method.
상세보기
Bayman, Atiye; Rahman, Md Sazzadur; Zhang, Weijie; van Schravendijk, Bart; Gauri, Vishal; Papasoulitotis, George D.; Singh, Vikram, Gap fill for high aspect ratio structures.
상세보기
Rangarajan, Vishwanathan; Antonelli, George Andrew; Banerji, Ananda; Van Schravendijk, Bart, Hardmask materials.
상세보기
Rangarajan, Vishwanathan; Antonelli, George Andrew; Banerji, Ananda; van Schravendijk, Bart, Hardmask materials.
상세보기
Rangarajan, Vishwanathan; Antonelli, George Andrew; van Schravendijk, Bart, Hardmask materials.
상세보기
Bornhorst James M. (DeSoto TX) Stacy Timothy D. (Rowlett TX) Hutton Richard W. (Irving TX), High intensity lighting projectors.
상세보기
Berry, III, Ivan Louis; Chung, Kyuha; Han, Qingyuan; Liu, Youfan; Moyer, Eric Scott; Spaulding, Michael John, High modulus, low dielectric constant coatings.
상세보기
Kotake, Ryo; Oikawa, Yuji, Imaging apparatus having a movable barrier and a movable barrier opening/closing member.
상세보기
Parke Vijay, In situ cleaning of the surface inside a vacuum processing chamber.
상세보기
Hsia Shaw-Tzeng,TWX ; Lee Ching-Ying,TWX ; Liao Chih-Cheng,TWX, In-situ SOG etchback and deposition for IMD process.
상세보기
Xia,Li Qun; Xu,Huiwen; Witty,Derek R.; M'Saad,Hichem, In-situ oxide capping after CVD low k deposition.
상세보기
Sakai Naomichi (Ayase JPX) Kikusawa Masanaga (Ichikawa JPX) Kubota Yoshitaka (Sagamihara JPX) Yamamura Hiroshi (Yokohama JPX) Nagata Hiroya (Yokohama JPX), Laminated silicon oxide film capacitors and method for their production.
상세보기
Demos, Alexandros T.; Ponnekanti, Hari K.; Zhao, Jun; Armer, Helen R.; Livesay, William R.; Woods, Scott C., Large area source for uniform electron beam generation.
상세보기
Shyama Mukherjee ; Roger Leung ; Kreisler Lau, Low dielectric materials and methods of producing same.
상세보기
Bourassa Roger J. (Kent WA), Low temperature plasma generator with minimal RF emissions.
상세보기
Fonash, Stephen J.; Lin, Xin; Reber, Douglas M., Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications.
상세보기
Lee Gil S. (Baton Rouge LA) Song Joho (Baton Rouge LA), Low-temperature plasma-enhanced chemical vapor deposition of silicon oxide films and fluorinated silicon oxide films usi.
상세보기
Asai, Masayuki; Kitayama, Kanako, Manufacturing method of semiconductor device and substrate processing apparatus.
상세보기
Shrinivasan, Krishnan; Shimanovich, Arkadiy; Gadgil, Prasad N., Measurement of substrate temperature in a process chamber using non-contact filtered infrared pyrometry.
상세보기
Bohr Mark T. ; Greason Jeffrey K., Memory cell design with vertically stacked crossovers.
상세보기
James Edward MacDougall ; Kevin Ray Heier ; Scott Jeffrey Weigel, Mesoporous films having reduced dielectric constants.
상세보기
Liu Jun ; Domansky Karel ; Li Xiaohong ; Fryxell Glen E. ; Baskaran Suresh ; Kohler Nathan J. ; Thevuthasan Suntharampillai ; Coyle Christopher A. ; Birnbaum Jerome C., Mesoporous silica film from a solution containing a surfactant and methods of making same.
상세보기
Schaeffer William R. (Mt. Airy MD), Method and apparatus for UV curing thick pigmented coatings.
상세보기
Cho,Seon Mee; Srinivasan,Easwar; Lu,Brian G.; Mordo,David, Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties.
상세보기
Troue Harden Henry (Plainfield IN), Method and apparatus for operating a mercury vapor lamp.
상세보기
Shepherd, Jr.,Robert A.; Caughran,James, Method and apparatus for plasma optimization in water processing.
상세보기
Hardikar,Vishwas V.; Schlueter,James A.; Chen,Guangshun, Method and apparatus for post-CMP cleaning of a semiconductor work piece.
상세보기
Matthews John C. (Columbia MD) Couch Robert W. (Frederick MD), Method and apparatus for providing low gloss and gloss controlled radiation-cured coatings.
상세보기
Starov Vladimir ; Basha Syed S. ; Shrinivasan Krishnan ; Reinhardt Karen A. ; Kabansky Aleksandr, Method and apparatus for removing post-etch residues and other adherent matrices.
상세보기
Starov Vladimir ; Erez Shmuel ; Basha Syed S. ; Shimanovich Arkadiy I. ; Vellanki Ravi ; Shrinivasan Krishnan ; Reinhardt Karen A. ; Kabansky Aleksandr, Method and apparatus for removing post-etch residues and other adherent matrices.
상세보기
Butterbaugh Jeffery W. ; Gray David C. ; Fayfield Robert T. ; Siefering Kevin ; Heitzinger John ; Hiatt Fred C., Method and apparatus for surface conditioning.
상세보기
Swanson Paul A. (3585 Millet Ct. San Jose CA 95127) Gibson John A. (655 Oneida Dr. Sunnyvale CA 94087) Knirck Jeffrey G. (868 Jasmine Dr. Sunnyvale CA 94086), Method and apparatus for transfer of a reticle pattern onto a substrate by scanning.
상세보기
Wada, Kenya; Kinoshita, Kazuto; Gommori, Kazuhiko, Method and apparatus for treating surface of substrate plate.
상세보기
Humayun, Raashina; Joyce, Patrick Christopher, Method and apparatus to remove additives and contaminants from a supercritical processing solution.
상세보기
Saenger, Annette; Sell, Bernhard; Seidl, Harald; Hecht, Thomas; Gutsche, Martin, Method and device for depositing thin layers via ALD/CVD processes in combination with rapid thermal processes.
상세보기
Liu, Junjun; Toma, Dorel I.; Lee, Eric M., Method for curing a porous low dielectric constant dielectric film.
상세보기
Livesay William R. ; Ross Matthew F. ; Rubiales Anthony L., Method for curing spin-on-glass film utilizing electron beam radiation.
상세보기
Harvey, Keith R.; Lim, Tian-Hoe; Xia, Li-Qun, Method for densification of CVD carbon-doped silicon oxide films through UV irradiation.
상세보기
Mak,Cecilia Y.; Law,Kam S., Method for depositing porous films.
상세보기
Furukawa, Toshiharu; Hakey, Mark C.; Holmes, Steven J.; Horak, David V.; Ma, William H-L., Method for etching a semiconductor substrate using germanium hard mask.
상세보기
Kim, Kyong-Min; Song, Han-Sang, Method for forming Ta2O5 dielectric layer by using in situ N2O plasma treatment.
상세보기
Bao, Tien-I; Ko, Chung-Chi; Li, Lih-Ping; Jang, Syun-Ming, Method for forming a carbon doped oxide low-k insulating layer.
상세보기
Lu, Hsin-Hsien; Song, Aaron; Bao, Tien-I; Jang, Syun-Ming, Method for forming a hydrophilic surface on low-k dielectric insulating layers for improved adhesion.
상세보기
Pheng, Soo Choi; Chan, Lap; Yang, Wang Cui; Kong, Siew Yong; See, Alex, Method for forming a region of low dielectric constant nanoporous material using a microemulsion technique.
상세보기
Ohno, Keiichi, Method for forming a semiconductor device having a DRAM region and a logic region on the substrate.
상세보기
Won,Seok jun; Park,Young wook; Hyung,Yong woo, Method for forming a thin film.
상세보기
Tsukamoto Katsuhiro (Hyogo JPX) Tokui Akira (Hyogo JPX), Method for forming a thin layer on a semiconductor substrate.
상세보기
Tsukamoto Katsuhiro (Hyogo JPX) Tokui Akira (Hyogo JPX), Method for forming a thin layer on a semiconductor substrate and apparatus therefor.
상세보기
Tien-I Bao TW; Syun-Ming Jang TW, Method for forming damascene structure employing bi-layer carbon doped silicon nitride/carbon doped silicon oxide etch stop layer.
상세보기
Liu Chih-Chien,TWX ; Wu Juan-Yuan,TWX ; Lur Water,TWX, Method for forming dielectric layers.
상세보기
Fox, Keith; Srinivasan, Easwar; Mordo, David; Wu, Qingguo, Method for improving mechanical properties of low dielectric constant materials.
상세보기
Liu Chung-Shi,TWX ; Yu Chen-Hua,TWX, Method for making metal plug contacts and metal lines in an insulating layer by chemical/mechanical polishing that reduces polishing-induced damage.
상세보기
C. Jeffrey Brinker ; Yunfeng Lu ; Hongyou Fan, Method for making surfactant-templated thin films.
상세보기
Brinker C. Jeffrey ; Lu Yunfeng ; Fan Hongyou, Method for making surfactant-templated, high-porosity thin films.
상세보기
Chiang, Kang-Lie; Dahimene, Mahmoud; Zhao, Xiaoye; Ye, Yan; Delgadino, Gerardo A.; Hung, Hoiman; Xia, Li-Qun; Conti, Giuseppina R., Method for modifying dielectric characteristics of dielectric layers.
상세보기
Yamazaki Shunpei,JPX ; Sakama Mitsunori,JPX ; Takemura Yasuhiko,JPX, Method for producing semiconductor device and apparatus for treating semiconductor device.
상세보기
Nguyen,Son Van; Shaw,Thomas M., Method for reducing film stress for SiCOH low-k dielectric materials.
상세보기
Kelman, Maxim; Shrinivasan, Krishnan; Wang, Feng; Lu, Victor; Chang, Sean; Lu, Guangquan, Method for reducing stress in porous dielectric films.
상세보기
Watkins James J. ; McCarthy Thomas J., Method of chemically depositing material onto a substrate.
상세보기
San, Nelson Loke Chou; Kagami, Kenichi; Satoh, Kiyoshi, Method of cleaning a CVD reaction chamber using an active oxygen species.
상세보기
Hutter ; III Charles G. (4110 County Line Carson City NV 89701), Method of curing adhesive.
상세보기
Karel Domansky ; Glen E. Fryxell ; Jun Liu ; Nathan J. Kohler ; Suresh Baskaran, Method of dehydroxylating a hydroxylated material and method of making a mesoporous film.
상세보기
Lee, Ju-Hyung; Xu, Ping; Venkataraman, Shankar; Xia, Li-Qun; Han, Fei; Yieh, Ellie; Nemani, Srinivas D.; Yim, Kangsub; Moghadam, Farhad K.; Sinha, Ashok K.; Zheng, Yi, Method of depositing dielectric materials in damascene applications.
상세보기
Tamura Muneo,JPX ; Yamauchi Takeshi,JPX ; Niwa Katuhide,JPX ; Fukazawa Takeshi,JPX ; Kuroyanagi Akira,JPX, Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen.
상세보기
Possin George E. (Schenectady NY) Kwasnick Robert F. (Schenectady NY) Giambattista Brian W. (Scotia NY), Method of fabricating a thin film transistor using hydrogen plasma treatment of the intrinsic silicon/doped layer interf.
상세보기
Gonsiorawski Ronald C. (Danvers MA) Czernienko George (Lowell MA), Method of fabricating solar cells with silicon nitride coating.
상세보기
Vassiliev Vladislav Y.,SGX, Method of fluorinated silicon oxide film deposition.
상세보기
Dougan, James N.; Smith, Lesley A., Method of forming a low K dielectric in a semiconductor manufacturing process.
상세보기
Kloster,Grant M.; O'brien,Kevin P.; Goodner,Michael D.; Leu,Jihperng; Gracias,David H.; Rockford,Lee D.; Moon,Peter K.; Barns,Chris E., Method of forming a selectively converted inter-layer dielectric using a porogen material.
상세보기
Werkhoven, Christiaan J.; Raaijmakers, Ivo; Haukka, Suvi P., Method of forming graded thin films using alternating pulses of vapor phase reactants.
상세보기
Hendriks, Menso; Tsuji, Naoto; Takahashi, Satoshi, Method of forming low-dielectric constant film on semiconductor substrate by plasma reaction using high-RF power.
상세보기
Pravin K. Narwankar ; Annabel Nickles ; Xiaoliang Jin ; Deepak Upadhyaya ; Yaxin Wang, Method of forming metal electrodes.
상세보기
Klaus Jason ; Sneh Ofer ; George Steven M., Method of growing films on substrates at room temperatures using catalyzed binary reaction sequence chemistry.
상세보기
Sanganeria, Mahesh; van Schravendijk, Bart, Method of improving adhesion between two dielectric films.
상세보기
Holler Mark A. (Palo Alto CA) Tam Simon M. (Redwood City CA), Method of increasing the accuracy of an analog circuit employing floating gate memory devices.
상세보기
Andideh, Ebrahim; Peterson, Kevin L., Method of making a semiconductor device by converting a hydrophobic surface of a dielectric layer to a hydrophilic surface.
상세보기
Lebens, John A., Method of manufacturing a thermally actuated liquid control device.
상세보기
Takaaki Ioka JP; Tsuneaki Tanabe JP; Ichiro Doi JP, Method of manufacturing interconnection structural body.
상세보기
Mochizuki Chiori (Zama JPX) Mizutani Hidemasa (Sagamihara JPX) Shoji Tatsumi (Hiratsuka JPX) Tashiro Kazuaki (Hadano JPX), Method of manufacturing non-single crystal film and non-single crystal semiconductor device.
상세보기
Paton, Eric; Besser, Paul Raymond; Chan, Simon S.; Hause, Fred, Method of manufacturing semiconductor device having nickel silicide with reduced interface roughness.
상세보기
Goundar,Kamal Kishore; Satoh,Kiyoshi, Method of manufacturing silicon carbide film.
상세보기
Tipton,Adrianne K.; Lu,Brian G.; Van Cleemput,Patrick A.; Schulberg,Michelle T.; Wu,Qingguo; Fu,Haiying; Wang,Feng, Method of porogen removal from porous low-k films using UV radiation.
상세보기
Asano Akihiko (Kanagawa JPX), Method of producing carbon-doped amorphous silicon thin film.
상세보기
Patrick A. Van Cleemput ; Ravi Kumar Laxman ; Jen Shu ; Michelle T. Schulberg ; Bunsen Nie, Method to deposit SiOCH films with dielectric constant below 3.0.
상세보기
Subhash Gupta SG; Yi Xu CA; Simon Chooi SG; Mei Sheng Zhou SG, Method to improve adhesion of organic dielectrics in dual damascene interconnects.
상세보기
Bandyopadhyay, Ananda K.; Cho, Seon Mee; Fu, Haiying; Srinivasan, Easwar; Mordo, David, Method to improve mechanical strength of low-K dielectric film using modulated UV exposure.
상세보기
Bandyopadhyay, Ananda K.; Cho, Seon-Mee; Fu, Haiying; Srinivasan, Easwar; Mordo, David, Method to improve mechanical strength of low-K dielectric film using modulated UV exposure.
상세보기
Bandyopadhyay, Ananda K.; Cho, Seon-Mee; Fu, Haiying; Srinivasan, Easwar; Mordo, David, Method to improve mechanical strength of low-K dielectric film using modulated UV exposure.
상세보기
Bandyopadhyay,Ananda K.; Cho,Seon Mee; Fu,Haiying; Srinivasan,Easwar; Mordo,David, Method to improve mechanical strength of low-k dielectric film using modulated UV exposure.
상세보기
Chun-Ching Tsan TW; Ying-Lang Wang TW; Hui-Ling Wang TW; Chin Kun Lan TW, Method to solve the delamination of a silicon nitride layer from an underlying spin on glass layer.
상세보기
Fong Gary ; Xia Li-Qun ; Nemani Srinivas ; Yieh Ellie, Methods and apparatus for cleaning surfaces in a substrate processing system.
상세보기
Xia, Li-Qun; Gaillard, Frederic; Yieh, Ellie; Lim, Tian H., Methods and apparatus to enhance properties of Si-O-C low K films.
상세보기
LaVoie, Adrien; Varadarajan, Bhadri; Henri, Jon; Hausmann, Dennis, Methods for UV-assisted conformal film deposition.
상세보기
Wu,Qingguo; Niu,Dong; Wang,Honghong; Fu,Haiying, Methods for improving integration performance of low stress CDO films.
상세보기
Niu,Dong; Fu,Haiying; Lu,Brian; Wang,Feng, Methods for improving the cracking resistance of low-k dielectric materials.
상세보기
Niu,Dong; Fu,Haiying; Lu,Brian; Wang,Feng, Methods for improving the cracking resistance of low-k dielectric materials.
상세보기
Wu,Qingguo; Fu,Haiying; Smith,David C.; Mordo,David, Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups.
상세보기
Wu,Qingguo; Fu,Haiying; Tang,Xingyuan, Methods for producing low-k CDO films.
상세보기
Wu,Qingguo; Niu,Dong; Fu,Haiying, Methods for producing low-k CDO films with low residual stress.
상세보기
Lin,Shun Li, Methods of code programming a mask ROM device.
상세보기
Sandhu,Gurtej S., Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry.
상세보기
Lai Jane-Bai,TWX ; Liu Chung-Shi,TWX ; Bao Tien-I,TWX ; Jang Syun-Ming,TWX ; Chang Chung-Long,TWX ; Wang Hui-Ling,TWX ; Wu Szu-An,TWX ; Cheng Wen-Kung,TWX ; Tsan Chun-Ching,TWX ; Wang Ying-Lang,TWX, Methods to improve copper-fluorinated silica glass interconnects.
상세보기
Fauver, Mark E.; Seibel, Eric J.; Brown, Chris M.; Reinhall, Per G.; Smithwick, Quinn Y. J., Micro-fabricated optical waveguide for use in scanning fiber displays and scanned fiber image acquisition.
상세보기
Haverkamp, Jason; Hausmann, Dennis; McLaughlin, Kevin; Shrinivasan, Krishnan; Rivkin, Michael; Smargiassi, Eugene; Sabri, Mohamed, Multi-station sequential curing of dielectric films.
상세보기
Shrinivasan, Krishnan; Rivkin, Michael; Smargiassi, Eugene; Sabri, Mohamed, Multi-station sequential curing of dielectric films.
상세보기
Shrinivasan, Krishnan; Rivkin, Michael; Smargiassi, Eugene; Sabri, Mohamed, Multi-station sequential curing of dielectric films.
상세보기
Fujiwara Shigetoshi (Hachioji JPX) Kishima Yoshio (Kasukabe JPX) Inoue Tadasu (Matsudo JPX), Optical filter structure.
상세보기
Antonelli, George Andrew; Hollister, Alice; Reddy, Sirish, Oxygen-containing ceramic hard masks and associated wet-cleans.
상세보기
Wu, Qingguo; Srinivasan, Easwar; Vitkavage, Dan, PECVD methods for producing ultra low-k dielectric films using UV treatment.
상세보기
Ramaswamy Chandrashekar, Parasitic helminth DiAg2 proteins and uses thereof.
상세보기
Rhieu Ji H. (Mesa AZ), Photo-assisted chemical vapor deposition method.
상세보기
Yamazaki Shunpei (Tokyo JPX) Imatoh Shinji (Kanagawa JPX) Hayashi Shigenori (Kanagawa JPX), Photochemical vapor phase reaction apparatus and method of causing a photochemical vapor phase reaction.
상세보기
Lai,Chien Hsin; Lin,San An; Yen,Kuo En; Huang,Kuo Uei, Plasma apparatus and method capable of adaptive impedance matching.
상세보기
Han, Qingyuan; Waldfried, Carlo; Escorcia, Orlando; Albano, Ralph; Berry, III, Ivan L.; Jang, Jeff; Ball, Ian, Plasma curing of MSQ-based porous low-k film materials.
상세보기
Berry, III, Ivan L.; Bridgewater, Todd; Chen, Wei; Han, Qingyuan; Moyer, Eric S.; Spaulding, Michael J.; Waldfried, Carlo, Plasma curing process for porous silica thin film.
상세보기
Wang,Feng; Schulberg,Michelle T.; Sun,Jianing; Humayun,Raashina; Van Cleemput,Patrick A., Plasma detemplating and silanol capping of porous dielectric films.
상세보기
Rocha-Alvarez, Juan Carlos; Zhao, Maosheng; Yu, Ying; Venkataraman, Shankar; Nemani, Srinivas D.; Xia, Li-Qun, Plasma enhanced CVD low k carbon-doped silicon oxide film deposition using VHF-RF power.
상세보기
Dhindsa,Raj; Kozakevich,Felix; Trussell,David Douglas, Plasma processor with electrode responsive to multiple RF frequencies.
상세보기
Hautala John J. ; Westendorp Johannes F. M., Plasma treated thermal CVD of TaN films from tantalum halide precursors.
상세보기
Huang,Judy, Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers.
상세보기
Tolles Robert D., Polishing pad with a partial adhesive coating.
상세보기
Kartik Ramaswamy ; Kwok Manus Wong ; Ashish Bhatnagar ; Mehran Moalem ; Tony S. Kaushal ; Shamouil Shamouilian, Porous ceramic liner for a plasma source.
상세보기
Cho Chi-Chen (Richardson TX) Gnade Bruce E. (Dallas TX) Smith Douglas M. (Albuquerque NM), Porous dielectric material with improved pore surface properties for electronics applications.
상세보기
Cho Chih-Chen ; Gnade Bruce E. ; Smith Douglas M. ; Changming Jin ; Ackerman William C. ; Johnston Gregory C., Porous dielectric material with improved pore surface properties for electronics applications.
상세보기
Lukas,Aaron Scott; O'Neill,Mark Leonard; Karwacki, Jr.,Eugene Joseph; Vrtis,Raymond Nicholas; Vincent,Jean Louise, Porous low dielectric constant compositions and methods for making and using same.
상세보기
Craig S. Allen ; Nikoi Annan ; Robert M. Blankenship ; Michael K. Gallagher ; Robert H. Gore ; Angelo A. Lamola ; Yujian You, Porous materials.
상세보기
Robert H. Gore ; Michael K. Gallagher ; Scott A. Ibbitson, Porous materials.
상세보기
You Yujian ; Lamola Angelo A. ; Gore Robert H. ; Gallagher Michael K. ; Annan Nikoi, Porous materials.
상세보기
Patrick Roger (Santa Clara CA) Bose Frank A. (Wettingen CHX), Power control and delivery in plasma processing equipment.
상세보기
Lopatin,Sergey; Shanmugasundram,Arulkumar; Emami,Ramin; Fang,Hongbin, Pretreatment for electroless deposition.
상세보기
Boitnott Charles A. (Half Moon Bay CA) Caughran James W. (Lodi CA) Egbert Steve (Palo Alto CA), Process chamber sleeve with ring seals for isolating individual process modules in a common cluster.
상세보기
Hedrick Jeffrey Curtis (Park Ridge NJ) Hedrick James Lupton (Pleasanton CA) Liao Yun-Hsin (W. Nyack NY) Miller Robert Dennis (San Jose CA) Shih Da-Yuan (Poughkeepsie NY), Process for making a foamed polymer.
상세보기
Shiraiwa, Hidehiko; Park, Jaeyong; Cheung, Fred T K; Halliyal, Arvind, Process for reducing hydrogen contamination in dielectric materials in memory devices.
상세보기
Nishida Shoji (Nagahama JPX), Process for the formation of a silicon-containing semiconductor thin film by chemically reacting active hydrogen atoms w.
상세보기
Barthel Herbert (Emmerting DEX) Heinemann Mario (Burghausen DEX) Herrmann Franz (Emmerting DEX) Altenbuchner August (St. Radegund DEX), Process for the silylation of inorganic oxides.
상세보기
Barthel Herbert,DEX ; Heinemann Mario,DEX ; Herrmann Franz,DEX ; Altenbuchner August,ATX, Process for the silylation of inorganic oxides.
상세보기
Brinker C. Jeffrey ; Anderson Mark T. ; Ganguli Rahul ; Lu Yunfeng, Process to form mesostructured films.
상세보기
Masahito Sugiura JP; Hiroshi Shinriki JP; Hideki Kiryu JP; Shintaro Aoyama JP, Processing apparatus and processing method.
상세보기
Varadarajan, Bhadri N., Progressive UV cure.
상세보기
RamachandraRao,Vijayakumar S.; Gracias,David H., Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials.
상세보기
Nguyen,Huong Thanh; Barnes,Michael Scott; Xia,Li Qun; Naik,Mehul, Selective etching of organosilicate films over silicon oxide stop etch layers.
상세보기
Yamazaki,Shunpei; Isobe,Atsuo; Yamaguchi,Tetsuji; Godo,Hiromichi, Semiconductor device with a floating gate electrode that includes a plurality of particles.
상세보기
Tarafdar, Raihan M.; Papasouliotis, George D.; Rulkens, Ron; Hausmann, Dennis M.; Tobin, Jeff; Tipton, Adrianne K.; Nie, Bunsen, Sequential deposition/anneal film densification method.
상세보기
Tarafdar,Raihan M.; Papasouliotis,George D.; Rulkens,Ron; Hausmann,Dennis M.; Tobin,Jeff; Tipton,Adrianne K.; Nie,Bunsen, Sequential deposition/anneal film densification method.
상세보기
Yasuto Sakai JP; Yasuhiro Saito JP; Hiroyuki Inomata JP, Silicon dioxide-coated polyolefin resin and process for its production.
상세보기
Nobuo Matsuki JP; Yuichi Naito JP; Yoshinori Morisada JP; Aya Matsunoshita JP, Silicone polymer insulation film on semiconductor substrate and method for forming the film.
상세보기
Shrinivasan, Krishna; Wang, Feng; Kamian, George; Gentile, Steve; Yam, Mark, Single-chamber sequential curing of semiconductor wafers.
상세보기
Shinriki Hiroshi,JPX ; Sugiura Masahito,JPX, Single-substrate-heat-processing method for performing reformation and crystallization.
상세보기
Clevenger,Lawrence A.; Chiras,Stefanie R.; Dalton,Timothy; Demarest,James J.; Dunn,Derren N.; Dziobkowski,Chester T.; Flaitz,Philip L.; Lane,Michael W.; Lloyd,James R.; Restaino,Darryl D.; Shaw,Thomas M.; Wang,Yun Yu; Yang,Chih Chao, Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer.
상세보기
Masakazu Sugaya JP; Fumio Murai JP; Yutaka Kaneko JP; Masafumi Kanetomo JP; Shigeki Hirasawa JP; Tomoji Watanabe JP; Tatuharu Yamamoto JP; Katsuhiro Kuroda JP, Substrate temperature control system and method for controlling temperature of substrate.
상세보기
Meder Martin G., System and method for flash photolysis cleaning of a semiconductor processing chamber.
상세보기
Rangarajan, Bharath; Singh, Bhanwar; Phan, Khoi A.; Choo, Bryan K.; Subramanian, Ramkumar, System and method for illuminating a semiconductor processing system.
상세보기
Soltz,David; Wieczorek,Paul; Zuo,Aaron; Toth,Gabor, Systems and methods for reducing alteration of a specimen during analysis for charged particle based and other measurement systems.
상세보기
Nunan,Peter; Nasser Ghodsi,Muhran; Borowicz,Mark; Garcia,Rudy F.; Chuang,Tzu Chin; Marchman,Herschel; Soltz,David, Systems configured to reduce distortion of a resist during a metrology process and systems and methods for reducing alteration of a specimen during analysis.
상세보기
Varadarajan, Bhadri; Chang, Sean; Sims, James S.; Lu, Guangquan; Mordo, David; Ilcisin, Kevin; Pandit, Mandar; Carris, Michael, Tensile dielectric films using UV curing.
상세보기
Angelopoulos Marie ; Babich Katherina ; Grill Alfred ; Halle Scott David ; Mahorowala Arpan Pravin ; Patel Vishnubhai Vitthalbhai, Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof.
상세보기
Chen,I I; Bao,Tien I; Cheug,Shwang Ming; Yu,Chen Hua, UV curing of low-k porous dielectrics.
상세보기
Shi Jianou ; Mitchener James C., UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition.
상세보기
van Schravendijk, Bart; Crew, William, UV treatment for carbon-containing low-k dielectric repair in semiconductor processing.
상세보기
van Schravendijk, Bart; Cho, Seon Mee, UV treatment of STI films for increasing tensile stress.
상세보기
van Schravendijk, Bart; Denisse, Christian, UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement.
상세보기
Mueller Karl F. (New York NY) Harisiades Paul (Hastings-on-Hudson NY), UV- and heat curable terminal polyvinyl functional macromers and polymers thereof.
상세보기
Scheffer Herbert D. (R.D. 2 ; Box 180A Glen Gardner NJ 08826), Ultraviolet curing lamp device.
상세보기
Waldfried, Carlo; Han, Qingyuan; Escorcia, Orlando; Berry, III, Ivan L., Ultraviolet curing processes for advanced low-k materials.
상세보기
van den Hoek,Willibrordus Gerardus Maria; Draeger,Nerissa S.; Humayun,Raashina; Hill,Richard S.; Sun,Jianing; Ray,Gary William, VLSI fabrication processes for introducing pores into dielectric materials.
상세보기
Birnbaum, Jerome; Maupin, Gary; Dunham, Glen; Fryxell, Glen; Baskaran, Suresh, Vacuum/gas phase reactor for dehydroxylation and alkylation of porous silica.
상세보기

IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 공고번호, 공고일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표출원인, 출원인국적, 출원인주소, 발명자, 발명자E, 발명자코드, 발명자주소, 발명자 우편번호, 발명자국적, 대표IPC, IPC코드, 요약, 미국특허분류, 대리인주소, 대리인코드, 대리인(한글), 대리인(영문), 국제공개일자, 국제공개번호, 국제출원일자, 국제출원번호, 우선권, 우선권주장일, 우선권국가, 우선권출원번호, 원출원일자, 원출원번호, 지정국, Citing Patents, Cited Patents
저장형식	Text(ASCII format) Excel format PIAS분석(.xls)
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	총 건의 자료가 검색되었습니다. 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오. ~ Text(ASCII format) Excel format

연합인증

Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

이 특허에 인용된 특허 (206)

관련 콘텐츠

특허 원문 보기

IPC 상위 출원인

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

선택된 텍스트

연합인증

Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

전체(0) 논문(0) 특허(0) 보고서(0)

전체(0) 논문(0) 특허(0) 보고서(0)

이 특허에 인용된 특허 (206)

관련 콘텐츠

특허 원문 보기

IPC 상위 출원인

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

선택된 텍스트