Bulk diffusion crystal growth of nitride crystal
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C30B-001/02
C30B-023/00
C30B-029/40
C30B-025/00
출원번호
US-0477431
(2014-09-04)
등록번호
US-9856577
(2018-01-02)
발명자
/ 주소
Schmitt, Jason
Lu, Peng
Jones, Jeremy
출원인 / 주소
Nitride Solutions, Inc.
대리인 / 주소
Polsinelli PC
인용정보
피인용 횟수 :
0인용 특허 :
19
초록▼
The present disclosure generally relates to systems and methods for growing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow l
The present disclosure generally relates to systems and methods for growing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals.
대표청구항▼
1. A method of growing group III-V nitride crystal comprising: providing a powder to an annular-shaped cavity of a crucible, the annular shaped cavity defined by an interior surface of the crucible and a packing tube removably disposed in the crucible, and where the powder comprises a distribution o
1. A method of growing group III-V nitride crystal comprising: providing a powder to an annular-shaped cavity of a crucible, the annular shaped cavity defined by an interior surface of the crucible and a packing tube removably disposed in the crucible, and where the powder comprises a distribution of particle sizes of at least one constituent species of the group III-V nitride crystal;compressing the powder to form a charge body;removing the packing tube to form a charge body cavity, the charge body comprising an exterior surface and an interior surface defining the charge body cavity;heating the crucible to sinter the charge body, wherein heating the crucible further induces a driving force across the charge body; andsoaking the crucible and the charge body at a temperature sufficient to diffuse the at least one constituent species of the group III-V nitride crystal from the exterior surface to the interior surface of the charge body, where the at least one constituent species of the group III-V nitride crystal freely-nucleates in the interior surface to grow the group III-V nitride crystal in the interior cavity. 2. The method of claim 1, wherein the group III-V nitride crystal is a single crystal. 3. The method of claim 1, wherein the group III-V nitride crystal comprises nitrogen and at least one species of Al, Ga, and In. 4. The method of claim 3, wherein the group III-V nitride crystal has a formula of AlxInyGa(1-x-y)N, where 0≦x≦1, 0≦y≦1, x+y+(1−x−y)≠1. 5. The method of claim 2, wherein the single crystal is spontaneously grown on the interior surface of the charge body. 6. The method of claim 1, wherein the at least one constituent species of the group III-V nitride crystal is diffused by a concentration differential. 7. The method of claim 1, wherein a source for the at least one constituent species of the group III-V nitride crystal is provided by thermal decomposition of the charge body. 8. The method of claim 1, wherein the charge body comprises at least one of AlN, Al1Ga(1-x)N, Al1In(1-x)N where (0≦x≦1), AlxInyGa(1-x-y)N or a combination thereof. 9. The method of claim 1, wherein the charge body comprises a filler. 10. The method of claim 9, wherein the filler comprises at least one refractory material. 11. The method of claim 10, wherein the at least one refractory metal comprises a carbide of tungsten. 12. The method of claim 9, wherein the filler comprises a complex ceramic material. 13. The method of claim 1, wherein the charge body can be in any shape, with at least one preferable growing surface. 14. The method of claim 1, wherein the charge body comprises a sintered ceramic, wherein the sintered ceramic is sintered in situ from the powder. 15. The method of claim 14, wherein a porosity of the charge body is determined by the distribution of particle sizes of the powder. 16. The method of claim 1, wherein the charge body comprises a solid porous material. 17. The method of claim 16, wherein the solid porous material comprises at least one of a sintered ceramic powder. 18. The method of claim 1, further comprising: diffusing the at least one constituent species of the group III-V nitride crystal through a second charge body, wherein the second charge body is a solid porous material. 19. The method of claim 18, wherein the charge body is devoid of AlN. 20. The method of claim 1, wherein a growth orientation of the group III-V crystal is controlled by one or more of a direction, a magnitude, or a gradient of the driving force.
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