Sputtering target, method for manufacturing the same, and method for manufacturing semiconductor device
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23C-014/35
H01L-029/49
C04B-035/453
C04B-035/58
C04B-035/645
C23C-014/06
C23C-014/34
H01L-021/02
H01L-021/443
출원번호
US-0530872
(2014-11-03)
등록번호
US-9865696
(2018-01-09)
우선권정보
JP-2010-281429 (2010-12-17)
발명자
/ 주소
Yamazaki, Shunpei
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Fish & Richardson P.C.
인용정보
피인용 횟수 :
0인용 특허 :
46
초록▼
A deposition technique for forming an oxynitride film is provided. A highly reliable semiconductor element is manufactured with the use of the oxynitride film. The oxynitride film is formed with the use of a sputtering target including an oxynitride containing indium, gallium, and zinc, which is obt
A deposition technique for forming an oxynitride film is provided. A highly reliable semiconductor element is manufactured with the use of the oxynitride film. The oxynitride film is formed with the use of a sputtering target including an oxynitride containing indium, gallium, and zinc, which is obtained by sintering a mixture of at least one of indium nitride, gallium nitride, and zinc nitride as a raw material and at least one of indium oxide, gallium oxide, and zinc oxide in a nitrogen atmosphere. In this manner, the oxynitride film can contain nitrogen at a necessary concentration. The oxynitride film can be used for a gate, a source electrode, a drain electrode, or the like of a transistor.
대표청구항▼
1. A method for manufacturing a semiconductor device comprising the steps of: forming a gate electrode comprising an oxynitride film over a substrate with the use of a sputtering target; andforming an oxide semiconductor film over the gate electrode,wherein the semiconductor device comprises a trans
1. A method for manufacturing a semiconductor device comprising the steps of: forming a gate electrode comprising an oxynitride film over a substrate with the use of a sputtering target; andforming an oxide semiconductor film over the gate electrode,wherein the semiconductor device comprises a transistor,wherein the oxide semiconductor film comprises a channel formation region of the transistor,wherein the oxide semiconductor film is formed in an argon atmosphere, an oxygen atmosphere, or a mixed atmosphere containing argon and oxygen,wherein the sputtering target includes a sintered body of an oxynitride comprising at least two elements selected from indium, gallium, zinc, and tin, andwherein a concentration of nitrogen in the sintered body of the oxynitride is 4 atomic % or more. 2. The method for manufacturing a semiconductor device according to claim 1, wherein a total percentage of argon, krypton, and xenon in a sputtering gas used in the step of forming the oxynitride film over the substrate is 80% or more. 3. The method for manufacturing a semiconductor device according to claim 1, wherein the concentration of nitrogen in the sintered body of the oxynitride is 20 atomic % or more. 4. The method for manufacturing a semiconductor device according to claim 1, wherein a concentration of an alkali metal in the sintered body of the oxynitride is 5×1016 atoms/cm3 or lower. 5. The method for manufacturing a semiconductor device according to claim 1, wherein a concentration of hydrogen in the sintered body of the oxynitride is 1×1016 atoms/cm3 or lower. 6. The method for manufacturing a semiconductor device according to claim 1, wherein the oxynitride is an In—Ga—Zn—O—N-based compound. 7. A method for manufacturing a semiconductor device comprising the steps of: forming an oxide semiconductor film over a substrate; andforming a gate electrode comprising an oxynitride film over the oxide semiconductor film with the use of a sputtering target,wherein the semiconductor device comprises a transistor,wherein the oxide semiconductor film comprises a channel formation region of the transistor,wherein the oxide semiconductor film is formed in an argon atmosphere, an oxygen atmosphere, or a mixed atmosphere containing argon and oxygen,wherein the sputtering target includes a sintered body of an oxynitride comprising at least two elements selected from indium, gallium, zinc, and tin, andwherein a concentration of nitrogen in the sintered body of the oxynitride is 4 atomic % or more. 8. The method for manufacturing a semiconductor device according to claim 7, wherein a total percentage of argon, krypton, and xenon in a sputtering gas used in the step of forming the oxynitride film over the substrate is 80% or more. 9. The method for manufacturing a semiconductor device according to claim 7, wherein the concentration of nitrogen in the sintered body of the oxynitride is 20 atomic % or more. 10. The method for manufacturing a semiconductor device according to claim 7, wherein a concentration of an alkali metal in the sintered body of the oxynitride is 5×1016 atoms/cm3 or lower. 11. The method for manufacturing a semiconductor device according to claim 7, wherein a concentration of hydrogen in the sintered body of the oxynitride is 1×1016 atoms/cm3 or lower. 12. The method for manufacturing a semiconductor device according to claim 7, wherein the oxynitride is an In—Ga—Zn—O—N-based compound.
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