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Sputtering target, method for manufacturing the same, and method for manufacturing semiconductor device

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-014/35
  • H01L-029/49
  • C04B-035/453
  • C04B-035/58
  • C04B-035/645
  • C23C-014/06
  • C23C-014/34
  • H01L-021/02
  • H01L-021/443
출원번호 US-0530872 (2014-11-03)
등록번호 US-9865696 (2018-01-09)
우선권정보 JP-2010-281429 (2010-12-17)
발명자 / 주소
  • Yamazaki, Shunpei
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Fish & Richardson P.C.
인용정보 피인용 횟수 : 0  인용 특허 : 46

초록

A deposition technique for forming an oxynitride film is provided. A highly reliable semiconductor element is manufactured with the use of the oxynitride film. The oxynitride film is formed with the use of a sputtering target including an oxynitride containing indium, gallium, and zinc, which is obt

대표청구항

1. A method for manufacturing a semiconductor device comprising the steps of: forming a gate electrode comprising an oxynitride film over a substrate with the use of a sputtering target; andforming an oxide semiconductor film over the gate electrode,wherein the semiconductor device comprises a trans

이 특허에 인용된 특허 (46)

  1. Hoffman,Randy L.; Mardilovich,Peter P.; Herman,Gregory S., Combined binary oxide semiconductor device.
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  9. Hosono,Hideo; Hirano,Masahiro; Ota,Hiromichi; Orita,Masahiro; Hiramatsu,Hidenori; Ueda,Kazushige, LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film.
  10. Itagaki, Naho; Iwasaki, Tatsuya; Watanabe, Masatoshi; Den, Toru, Metal oxynitride semiconductor containing zinc.
  11. Takeda,Katsutoshi; Isomura,Masao, Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device.
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  14. Kaji,Nobuyuki; Yabuta,Hisato, Method of fabricating oxide semiconductor device.
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  17. Levy,David H.; Scuderi,Andrea C.; Irving,Lyn M., Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby.
  18. Hosono,Hideo; Ota,Hiromichi; Orita,Masahiro; Ueda,Kazushige; Hirano,Masahiro; Kamiya,Toshio, Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film.
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  20. Martin, Michel; Maurin-Perrier, Philippe; Blandenet, Olivier, Oxynitride sputtering target.
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  30. Ito,Yoshihiro; Kadota,Michio, Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device.
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  32. Saito,Keishi; Hosono,Hideo; Kamiya,Toshio; Nomura,Kenji, Sensor and image pickup device.
  33. Hunt Thomas J. ; Gilman Paul S., Sputter target/backing plate assembly and method of making same.
  34. Yamazaki, Shunpei; Takayama, Toru; Sato, Keiji, Sputtering target and manufacturing method thereof, and transistor.
  35. Yano, Koki; Kawashima, Hirokazu; Inoue, Kazuyoshi, Sputtering target, method for forming amorphous oxide thin film using the same, and method for manufacturing thin film transistor.
  36. Inoue, Kazuyoshi; Yano, Koki; Kasami, Masashi, Sputtering target, oxide semiconductor film and semiconductor device.
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  38. Kawasaki, Masashi; Ohno, Hideo; Kobayashi, Kazuki; Sakono, Ikuo, Thin film transistor and matrix display device.
  39. Umeda, Kenichi; Suzuki, Masayuki; Tanaka, Atsushi; Nara, Yuki, Thin film transistor and method of producing thin film transistor.
  40. Ishii,Hiromitsu; Hokari,Hitoshi; Yoshida,Motohiko; Yamaguchi,Ikuhiro, Thin film transistor having an etching protection film and manufacturing method thereof.
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  42. Sakata, Junichiro, Thin-film transistor device including a hydrogen barrier layer selectively formed over an oxide semiconductor layer.
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  45. Hoffman,Randy L.; Herman,Gregory S., Transistor using an isovalent semiconductor oxide as the active channel layer.
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