최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0389883 (2016-12-23) |
등록번호 | US-9871056 (2018-01-16) |
발명자 / 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 | 피인용 횟수 : 1 인용 특허 : 581 |
A first conductive structure forms gate electrodes of a first transistor of a first transistor type and a first transistor of a second transistor type. A second conductive structure forms a gate electrode of a second transistor of the first transistor type. A third conductive structure forms a gate
A first conductive structure forms gate electrodes of a first transistor of a first transistor type and a first transistor of a second transistor type. A second conductive structure forms a gate electrode of a second transistor of the first transistor type. A third conductive structure forms a gate electrode of a second transistor of the second transistor type. A fourth conductive structure forms a gate electrode of a third transistor of the first transistor type. A fifth conductive structure forms a gate electrode of a third transistor of the second transistor type. A sixth conductive structure forms gate electrodes of a fourth transistor of the first transistor type and a fourth transistor of the second transistor type. The second and third transistors of the first transistor type and the second and third transistors of the second transistor type are electrically connected to form a cross-coupled transistor configuration.
1. A semiconductor chip, comprising: a region including a plurality of transistors, each of the plurality of transistors in the region forming part of circuitry associated with execution of one or more logic functions, the region including at least nine conductive structures formed within the semico
1. A semiconductor chip, comprising: a region including a plurality of transistors, each of the plurality of transistors in the region forming part of circuitry associated with execution of one or more logic functions, the region including at least nine conductive structures formed within the semiconductor chip, some of the at least nine conductive structures forming at least one transistor gate electrode,each of the at least nine conductive structures respectively having a corresponding top surface, wherein an entirety of a periphery of the corresponding top surface is defined by a corresponding first end, a corresponding second end, a corresponding first edge, and a corresponding second edge, such that a total distance along the entirety of the periphery of the corresponding top surface is equal to a sum of a total distance along the corresponding first edge and a total distance along the corresponding second edge and a total distance along the corresponding first end and a total distance along the corresponding second end,wherein the total distance along the corresponding first edge is greater than two times the total distance along the corresponding first end,wherein the total distance along the corresponding first edge is greater than two times the total distance along the corresponding second end,wherein the total distance along the corresponding second edge is greater than two times the total distance along the corresponding first end,wherein the total distance along the corresponding second edge is greater than two times the total distance along the corresponding second end,wherein the corresponding first end extends from the corresponding first edge to the corresponding second edge and is located principally within a space between the corresponding first and second edges,wherein the corresponding second end extends from the corresponding first edge to the corresponding second edge and is located principally within the space between the corresponding first and second edges,the top surfaces of the at least nine conductive structures co-planar with each other,each of the at least nine conductive structures having a corresponding lengthwise centerline oriented in a first direction along its top surface and extending from its first end to its second end,each of the at least nine conductive structures having a length as measured along its lengthwise centerline from its first end to its second end,wherein the first edge of each of the at least nine conductive structures is substantially straight,wherein the second edge of each of the at least nine conductive structures is substantially straight,each of the at least nine conductive structures having both its first edge and its second edge oriented substantially parallel to its lengthwise centerline,each of the at least nine conductive structures having a width measured in a second direction perpendicular to the first direction at a midpoint of its lengthwise centerline,each of the first direction and the second direction oriented substantially parallel to the co-planar top surfaces of the at least nine conductive structures,wherein the at least nine conductive structures are positioned in a side-by-side manner such that each of the at least nine conductive structures is positioned to have at least a portion of its length beside at least a portion of the length of another of the at least nine conductive structures,wherein the width of each of the at least nine conductive structures is less than 45 nanometers, each of the at least nine conductive structures positioned such that a distance as measured in the second direction between its lengthwise centerline and the lengthwise centerline of at least one other of the at least nine conductive structures is substantially equal to a first pitch that is less than or equal to about 193 nanometers,wherein the at least nine conductive structures includes a first conductive structure, the first conductive structure including a portion that forms a gate electrode of a first transistor of a first transistor type, the first conductive structure also including a portion that forms a gate electrode of a first transistor of a second transistor type,wherein the at least nine conductive structures includes a second conductive structure, the second conductive structure including a portion that forms a gate electrode of a second transistor of the first transistor type, wherein any transistor having its gate electrode formed by the second conductive structure is of the first transistor type,wherein the at least nine conductive structures includes a third conductive structure, the third conductive structure including a portion that forms a gate electrode of a second transistor of the second transistor type, wherein any transistor having its gate electrode formed by the third conductive structure is of the second transistor type,wherein the at least nine conductive structures includes a fourth conductive structure, the fourth conductive structure including a portion that forms a gate electrode of a third transistor of the first transistor type, wherein any transistor having its gate electrode formed by the fourth conductive structure is of the first transistor type,wherein the at least nine conductive structures includes a fifth conductive structure, the fifth conductive structure including a portion that forms a gate electrode of a third transistor of the second transistor type, wherein any transistor having its gate electrode formed by the fifth conductive structure is of the second transistor type,wherein the at least nine conductive structures includes a sixth conductive structure, the sixth conductive structure including a portion that forms a gate electrode of a fourth transistor of the first transistor type, the sixth conductive structure also including a portion that forms a gate electrode of a fourth transistor of the second transistor type,wherein the first transistor of the first transistor type includes a first diffusion terminal and the second transistor of the first transistor type includes a first diffusion terminal, the first diffusion terminal of the first transistor of the first transistor type electrically connected to the first diffusion terminal of the second transistor of the first transistor type through a first electrical connection,wherein the first transistor of the second transistor type includes a first diffusion terminal, and the second transistor of the second transistor type includes a first diffusion terminal, the first diffusion terminal of the first transistor of the second transistor type electrically connected to the first diffusion terminal of the second transistor of the second transistor type through a second electrical connection,wherein the second transistor of the first transistor type includes a second diffusion terminal, and the third transistor of the first transistor type includes a first diffusion terminal, the second diffusion terminal of the second transistor of the first transistor type electrically connected to the first diffusion terminal of the third transistor of the first transistor type through a third electrical connection,wherein the second transistor of the second transistor type includes a second diffusion terminal, and the third transistor of the second transistor type includes a first diffusion terminal, the second diffusion terminal of the second transistor of the second transistor type electrically connected to the first diffusion terminal of the third transistor of the second transistor type through a fourth electrical connection,wherein the third transistor of the first transistor type includes a second diffusion terminal, and the fourth transistor of the first transistor type includes a first diffusion terminal, the second diffusion terminal of the third transistor of the first transistor type electrically connected to the first diffusion terminal of the fourth transistor of the first transistor type through a fifth electrical connection,wherein the third transistor of the second transistor type includes a second diffusion terminal, and the fourth transistor of the second transistor type includes a first diffusion terminal, the second diffusion terminal of the third transistor of the second transistor type electrically connected to the first diffusion terminal of the fourth transistor of the second transistor type through a sixth electrical connection,wherein the third electrical connection is electrically connected to the fourth electrical connection through a seventh electrical connection,wherein the gate electrode of the second transistor of the first transistor type is electrically connected to the gate electrode of the third transistor of the second transistor type through an eighth electrical connection,wherein the gate electrode of the third transistor of the first transistor type is electrically connected to the gate electrode of the second transistor of the second transistor type through a ninth electrical connection,wherein the lengthwise centerline of the second conductive structure is substantially aligned with the lengthwise centerline of the third conductive structure,wherein the lengthwise centerline of the fourth conductive structure is separated from the lengthwise centerline of the fifth conductive structure by a distance greater than zero as measured in the second direction, andwherein each transistor of the first transistor type having its gate electrode formed by any of the at least nine conductive structures is included in a first collection of transistors, and wherein each transistor of the second transistor type having its gate electrode formed by any of the at least nine conductive structures is included in a second collection of transistors, wherein the first collection of transistors is separated from the second collection of transistors by an inner sub-region of the region, wherein the inner sub-region does not include a source or a drain of any transistor. 2. The semiconductor chip as recited in claim 1, wherein the region includes a first interconnect level counting upward from the at least nine conductive structures, the first interconnect level formed at a vertical position within the semiconductor chip above the at least nine conductive structures, the first interconnect level separated from the co-planar top surfaces of the at least nine conductive structures by at least one dielectric material, and wherein the region includes a third interconnect level counting upward from the at least nine conductive structures, and wherein the region includes at least one other interconnect level vertically adjacent to the third interconnect level and separated from the third interconnect level by at least one dielectric material, wherein the region includes a first interconnect conductive structure positioned within either of the first interconnect level, the third interconnect level, or the at least one other interconnect level vertically adjacent to the third interconnect level,the first interconnect conductive structure having a top surface, an entirety of a periphery of the top surface of the first interconnect conductive structure defined by a first end of the first interconnect conductive structure, a second end of the first interconnect conductive structure, a first edge of the first interconnect conductive structure, and a second edge of the first interconnect conductive structure, such that a total distance along the entirety of the periphery of the top surface of the first interconnect conductive structure is equal to a sum of a total distance along the first edge of the first interconnect conductive structure and a total distance along the second edge of the first interconnect conductive structure and a total distance along the first end of the first interconnect conductive structure and a total distance along the second end of the first interconnect conductive structure,wherein the total distance along the first edge of the first interconnect conductive structure is greater than two times the total distance along the first end of the first interconnect conductive structure,wherein the total distance along the first edge of the first interconnect conductive structure is greater than two times the total distance along the second end of the first interconnect conductive structure,wherein the total distance along the second edge of the first interconnect conductive structure is greater than two times the total distance along the first end of the first interconnect conductive structure,wherein the total distance along the second edge of the first interconnect conductive structure is greater than two times the total distance along the second end of the first interconnect conductive structure,wherein the first end of the first interconnect conductive structure extends from the first edge of the first interconnect conductive structure to the second edge of the first interconnect conductive structure and is located principally within a space between the first and second edges of the first interconnect conductive structure,wherein the second end of the first interconnect conductive structure extends from the first edge of the first interconnect conductive structure to the second edge of the first interconnect conductive structure and is located principally within the space between the first and second edges of the first interconnect conductive structure,the first interconnect conductive structure having a lengthwise centerline oriented in the first direction along its top surface and extending from its first end to its second end,wherein the first edge of the first interconnect conductive structure is substantially straight and is oriented substantially parallel to the lengthwise centerline of the first interconnect conductive structure,wherein the second edge of the first interconnect conductive structure is substantially straight and is oriented substantially parallel to the lengthwise centerline of the first interconnect conductive structure,wherein the first interconnect conductive structure has a length measured along its lengthwise centerline from its first end to its second end,wherein the first interconnect conductive structure has a width measured in the second direction perpendicular to the first direction at a midpoint of the lengthwise centerline of the first interconnect conductive structure. 3. The semiconductor chip as recited in claim 2, wherein the region includes a second interconnect conductive structure positioned next to and spaced apart from the first interconnect conductive structure in a same interconnect level as the first interconnect conductive structure, the second interconnect conductive structure having a top surface, an entirety of a periphery of the top surface of the second interconnect conductive structure defined by a first end of the second interconnect conductive structure, a second end of the second interconnect conductive structure, a first edge of the second interconnect conductive structure, and a second edge of the second interconnect conductive structure, such that a total distance along the entirety of the periphery of the top surface of the second interconnect conductive structure is equal to a sum of a total distance along the first edge of the second interconnect conductive structure and a total distance along the second edge of the second interconnect conductive structure and a total distance along the first end of the second interconnect conductive structure and a total distance along the second end of the second interconnect conductive structure,wherein the total distance along the first edge of the second interconnect conductive structure is greater than two times the total distance along the first end of the second interconnect conductive structure,wherein the total distance along the first edge of the second interconnect conductive structure is greater than two times the total distance along the second end of the second interconnect conductive structure,wherein the total distance along the second edge of the second interconnect conductive structure is greater than two times the total distance along the first end of the second interconnect conductive structure,wherein the total distance along the second edge of the second interconnect conductive structure is greater than two times the total distance along the second end of the second interconnect conductive structure,wherein the first end of the second interconnect conductive structure extends from the first edge of the second interconnect conductive structure to the second edge of the second interconnect conductive structure and is located principally within a space between the first and second edges of the second interconnect conductive structure,wherein the second end of the second interconnect conductive structure extends from the first edge of the second interconnect conductive structure to the second edge of the second interconnect conductive structure and is located principally within the space between the first and second edges of the second interconnect conductive structure,the second interconnect conductive structure having a lengthwise centerline oriented in the first direction along its top surface and extending from its first end to its second end,wherein the first edge of the second interconnect conductive structure is substantially straight and is oriented substantially parallel to the lengthwise centerline of the second interconnect conductive structure,wherein the second edge of the second interconnect conductive structure is substantially straight and is oriented substantially parallel to the lengthwise centerline of the second interconnect conductive structure,wherein the second interconnect conductive structure has a length measured along its lengthwise centerline from its first end to its second end,wherein the second interconnect conductive structure has a width measured in the second direction perpendicular to the first direction at a midpoint of the lengthwise centerline of the second interconnect conductive structure. 4. The semiconductor chip as recited in claim 3, wherein the first and second interconnect conductive structures are positioned such that a distance as measured in the second direction between their lengthwise centerlines is substantially equal to a second pitch, wherein the second pitch is a fractional multiple of the first pitch. 5. The semiconductor chip as recited in claim 4, wherein the second pitch is less than or equal to the first pitch. 6. The semiconductor chip as recited in claim 5, wherein at least one of the at least nine conductive structures within the region is a transistor-free conductive structure that does not form a gate electrode of any transistor, the transistor-free conductive structure positioned such that a distance as measured in the second direction between its lengthwise centerline and each lengthwise centerline of at least two others of the at least nine conductive structures is substantially equal to the first pitch, wherein the length of the transistor-free conductive structure is substantially equal to or greater than the length of any one of the at least nine conductive structures that forms gate electrodes of transistors of each of the first and second transistor types, andwherein either the first end or the second end of the transistor-free conductive structure is located at a given line extending in the second direction, and wherein either the first end or the second end of at least one of the at least nine conductive structures that forms at least one transistor gate electrode is located at the given line extending in the second direction. 7. The semiconductor chip as recited in claim 6, wherein the first and second interconnect conductive structures are positioned within either of the first interconnect level or a second interconnect level located vertically between the first and third interconnect levels. 8. The semiconductor chip as recited in claim 1, wherein the region includes a first interconnect level counting upward from the at least nine conductive structures, the first interconnect level formed at a vertical position within the semiconductor chip above the at least nine conductive structures, the first interconnect level separated from the co-planar top surfaces of the at least nine conductive structures by at least one dielectric material, and wherein the region includes a third interconnect level counting upward from the at least nine conductive structures, and wherein the region includes at least one other interconnect level vertically adjacent to the third interconnect level and separated from the third interconnect level by at least one dielectric material, wherein the region includes a first interconnect conductive structure positioned within either of the first interconnect level, the third interconnect level, or the at least one other interconnect level vertically adjacent to the third interconnect level,the first interconnect conductive structure having a top surface, an entirety of a periphery of the top surface of the first interconnect conductive structure defined by a first end of the first interconnect conductive structure, a second end of the first interconnect conductive structure, a first edge of the first interconnect conductive structure, and a second edge of the first interconnect conductive structure, such that a total distance along the entirety of the periphery of the top surface of the first interconnect conductive structure is equal to a sum of a total distance along the first edge of the first interconnect conductive structure and a total distance along the second edge of the first interconnect conductive structure and a total distance along the first end of the first interconnect conductive structure and a total distance along the second end of the first interconnect conductive structure,wherein the total distance along the first edge of the first interconnect conductive structure is greater than two times the total distance along the first end of the first interconnect conductive structure,wherein the total distance along the first edge of the first interconnect conductive structure is greater than two times the total distance along the second end of the first interconnect conductive structure,wherein the total distance along the second edge of the first interconnect conductive structure is greater than two times the total distance along the first end of the first interconnect conductive structure,wherein the total distance along the second edge of the first interconnect conductive structure is greater than two times the total distance along the second end of the first interconnect conductive structure,wherein the first end of the first interconnect conductive structure extends from the first edge of the first interconnect conductive structure to the second edge of the first interconnect conductive structure and is located principally within a space between the first and second edges of the first interconnect conductive structure,wherein the second end of the first interconnect conductive structure extends from the first edge of the first interconnect conductive structure to the second edge of the first interconnect conductive structure and is located principally within the space between the first and second edges of the first interconnect conductive structure,the first interconnect conductive structure having a lengthwise centerline oriented in the second direction along its top surface and extending from its first end to its second end,wherein the first edge of the first interconnect conductive structure is substantially straight and is oriented substantially parallel to the lengthwise centerline of the first interconnect conductive structure,wherein the second edge of the first interconnect conductive structure is substantially straight and is oriented substantially parallel to the lengthwise centerline of the first interconnect conductive structure,wherein the first interconnect conductive structure has a length measured along its lengthwise centerline from its first end to its second end,wherein the first interconnect conductive structure has a width measured in the first direction perpendicular to the second direction at a midpoint of the lengthwise centerline of the first interconnect conductive structure. 9. The semiconductor chip as recited in claim 8, wherein the region includes a second interconnect conductive structure positioned in a same interconnect level as the first interconnect conductive structure, the second interconnect conductive structure having a top surface, an entirety of a periphery of the top surface of the second interconnect conductive structure defined by a first end of the second interconnect conductive structure, a second end of the second interconnect conductive structure, a first edge of the second interconnect conductive structure, and a second edge of the second interconnect conductive structure, such that a total distance along the entirety of the periphery of the top surface of the second interconnect conductive structure is equal to a sum of a total distance along the first edge of the second interconnect conductive structure and a total distance along the second edge of the second interconnect conductive structure and a total distance along the first end of the second interconnect conductive structure and a total distance along the second end of the second interconnect conductive structure,wherein the total distance along the first edge of the second interconnect conductive structure is greater than two times the total distance along the first end of the second interconnect conductive structure,wherein the total distance along the first edge of the second interconnect conductive structure is greater than two times the total distance along the second end of the second interconnect conductive structure,wherein the total distance along the second edge of the second interconnect conductive structure is greater than two times the total distance along the first end of the second interconnect conductive structure,wherein the total distance along the second edge of the second interconnect conductive structure is greater than two times the total distance along the second end of the second interconnect conductive structure,wherein the first end of the second interconnect conductive structure extends from the first edge of the second interconnect conductive structure to the second edge of the second interconnect conductive structure and is located principally within a space between the first and second edges of the second interconnect conductive structure,wherein the second end of the second interconnect conductive structure extends from the first edge of the second interconnect conductive structure to the second edge of the second interconnect conductive structure and is located principally within the space between the first and second edges of the second interconnect conductive structure,the second interconnect conductive structure having a lengthwise centerline oriented in the second direction along its top surface and extending from its first end to its second end,wherein the first edge of the second interconnect conductive structure is substantially straight and is oriented substantially parallel to the lengthwise centerline of the second interconnect conductive structure,wherein the second edge of the second interconnect conductive structure is substantially straight and is oriented substantially parallel to the lengthwise centerline of the second interconnect conductive structure,wherein the second interconnect conductive structure has a length measured along its lengthwise centerline from its first end to its second end,wherein the second interconnect conductive structure has a width measured in the first direction perpendicular to the second direction at a midpoint of the lengthwise centerline of the second interconnect conductive structure,wherein the first and second interconnect conductive structures are positioned next to and spaced apart from each other such that a distance as measured in the first direction between their lengthwise centerlines is substantially equal to a second pitch. 10. The semiconductor chip as recited in claim 9, wherein the region includes a third interconnect conductive structure positioned in the same interconnect level as the first and second interconnect conductive structures, the third interconnect conductive structure having a top surface, an entirety of a periphery of the top surface of the third interconnect conductive structure defined by a first end of the third interconnect conductive structure, a second end of the third interconnect conductive structure, a first edge of the third interconnect conductive structure, and a second edge of the third interconnect conductive structure, such that a total distance along the entirety of the periphery of the top surface of the third interconnect conductive structure is equal to a sum of a total distance along the first edge of the third interconnect conductive structure and a total distance along the second edge of the third interconnect conductive structure and a total distance along the first end of the third interconnect conductive structure and a total distance along the second end of the third interconnect conductive structure,wherein the total distance along the first edge of the third interconnect conductive structure is greater than two times the total distance along the first end of the third interconnect conductive structure,wherein the total distance along the first edge of the third interconnect conductive structure is greater than two times the total distance along the second end of the third interconnect conductive structure,wherein the total distance along the second edge of the third interconnect conductive structure is greater than two times the total distance along the first end of the third interconnect conductive structure,wherein the total distance along the second edge of the third interconnect conductive structure is greater than two times the total distance along the second end of the third interconnect conductive structure,wherein the first end of the third interconnect conductive structure extends from the first edge of the third interconnect conductive structure to the second edge of the third interconnect conductive structure and is located principally within a space between the first and second edges of the third interconnect conductive structure,wherein the second end of the third interconnect conductive structure extends from the first edge of the third interconnect conductive structure to the second edge of the third interconnect conductive structure and is located principally within the space between the first and second edges of the third interconnect conductive structure,the third interconnect conductive structure having a lengthwise centerline oriented in the second direction along its top surface and extending from its first end to its second end,wherein the first edge of the third interconnect conductive structure is substantially straight and is oriented substantially parallel to the lengthwise centerline of the third interconnect conductive structure,wherein the second edge of the third interconnect conductive structure is substantially straight and is oriented substantially parallel to the lengthwise centerline of the third interconnect conductive structure,wherein the third interconnect conductive structure has a length measured along its lengthwise centerline from its first end to its second end,wherein the third interconnect conductive structure has a width measured in the first direction perpendicular to the second direction at a midpoint of the lengthwise centerline of the third interconnect conductive structure,wherein the region includes a fourth interconnect conductive structure positioned in the same interconnect level as the first, second, and third interconnect conductive structures,the fourth interconnect conductive structure having a top surface, an entirety of a periphery of the top surface of the fourth interconnect conductive structure defined by a first end of the fourth interconnect conductive structure, a second end of the fourth interconnect conductive structure, a first edge of the fourth interconnect conductive structure, and a second edge of the fourth interconnect conductive structure, such that a total distance along the entirety of the periphery of the top surface of the fourth interconnect conductive structure is equal to a sum of a total distance along the first edge of the fourth interconnect conductive structure and a total distance along the second edge of the fourth interconnect conductive structure and a total distance along the first end of the fourth interconnect conductive structure and a total distance along the second end of the fourth interconnect conductive structure,wherein the total distance along the first edge of the fourth interconnect conductive structure is greater than two times the total distance along the first end of the fourth interconnect conductive structure,wherein the total distance along the first edge of the fourth interconnect conductive structure is greater than two times the total distance along the second end of the fourth interconnect conductive structure,wherein the total distance along the second edge of the fourth interconnect conductive structure is greater than two times the total distance along the first end of the fourth interconnect conductive structure,wherein the total distance along the second edge of the fourth interconnect conductive structure is greater than two times the total distance along the second end of the fourth interconnect conductive structure,wherein the first end of the fourth interconnect conductive structure extends from the first edge of the fourth interconnect conductive structure to the second edge of the fourth interconnect conductive structure and is located principally within a space between the first and second edges of the fourth interconnect conductive structure,wherein the second end of the fourth interconnect conductive structure extends from the first edge of the fourth interconnect conductive structure to the second edge of the fourth interconnect conductive structure and is located principally within the space between the first and second edges of the fourth interconnect conductive structure,the fourth interconnect conductive structure having a lengthwise centerline oriented in the second direction along its top surface and extending from its first end to its second end,wherein the first edge of the fourth interconnect conductive structure is substantially straight and is oriented substantially parallel to the lengthwise centerline of the fourth interconnect conductive structure,wherein the second edge of the fourth interconnect conductive structure is substantially straight and is oriented substantially parallel to the lengthwise centerline of the fourth interconnect conductive structure,wherein the fourth interconnect conductive structure has a length measured along its lengthwise centerline from its first end to its second end,wherein the fourth interconnect conductive structure has a width measured in the first direction perpendicular to the second direction at a midpoint of the lengthwise centerline of the fourth interconnect conductive structure,wherein the third and fourth interconnect conductive structures are positioned next to and spaced apart from each other such that a distance as measured in the first direction between their lengthwise centerlines is substantially equal to the second pitch. 11. The semiconductor chip as recited in claim 10, wherein at least one of the at least nine conductive structures within the region is a transistor-free conductive structure that does not form a gate electrode of any transistor, the transistor-free conductive structure positioned such that a distance as measured in the second direction between its lengthwise centerline and each lengthwise centerline of at least two others of the at least nine conductive structures is substantially equal to the first pitch, wherein the length of the transistor-free conductive structure is substantially equal to or greater than the length of any one of the at least nine conductive structures that forms gate electrodes of transistors of each of the first and second transistor types, andwherein either the first end or the second end of the transistor-free conductive structure is located at a given line extending in the second direction, and wherein either the first end or the second end of at least one of the at least nine conductive structures that forms at least one transistor gate electrode is located at the given line extending in the second direction. 12. The semiconductor chip as recited in claim 11, wherein the first, second, and third interconnect conductive structures are positioned within either of the first interconnect level, the third interconnect level, or a second interconnect level located vertically between the first and third interconnect levels. 13. The semiconductor chip as recited in claim 1, wherein the eighth electrical connection includes one or more overlying interconnect conductive structures, or the ninth electrical connection includes one or more overlying interconnect conductive structures, or both the eighth and the ninth electrical connections include one or more overlying electrical connections, wherein each overlying interconnect conductive structure is formed at a respective vertical position within the semiconductor chip overlying some of the at least nine conductive structures so as to be separated from the co-planar top surfaces of the at least nine conductive structures by at least one dielectric material, wherein each overlying interconnect conductive structure that is part of the eighth or ninth electrical connection has a respective top surface with an entirety of a periphery of the respective top surface defined by a corresponding first end, a corresponding second end, a corresponding first edge, and a corresponding second edge, such that a total distance along the entirety of the periphery of the respective top surface is equal to a sum of a total distance along the corresponding first edge and a total distance along the corresponding second edge and a total distance along the corresponding first end and a total distance along the corresponding second end,wherein the total distance along the corresponding first edge is greater than two times the total distance along the corresponding first end and is greater than two times the total distance along the corresponding second end, wherein the total distance along the corresponding second edge is greater than two times the total distance along the corresponding first end and is greater than two times the total distance along the corresponding second end,wherein the corresponding first end extends from the corresponding first edge to the corresponding second edge and is located principally within a space between the corresponding first edge and the corresponding second edge, wherein the corresponding second end extends from the corresponding first edge to the corresponding second edge and is located principally within a space between the corresponding first edge and the corresponding second edge,wherein each overlying interconnect conductive structure that is part of the eighth or ninth electrical connection has a respective lengthwise centerline oriented along its respective top surface to extend from its corresponding first end to its corresponding second end, with each of the corresponding first edge and the corresponding second edge being substantially straight and oriented substantially parallel to its respective lengthwise centerline. 14. The semiconductor chip as recited in claim 1, wherein the distance separating the lengthwise centerline of the fourth conductive structure from the lengthwise centerline of the fifth conductive structure is substantially equal to the first pitch. 15. The semiconductor chip as recited in claim 14, wherein the fourth conductive structure includes a non-gate portion extending in the first direction away from the portion of the fourth conductive structure that forms the gate electrode of the third transistor of the first transistor type, wherein a size as measured in the first direction of the non-gate portion of the fourth conductive structure is greater than a size as measured in the first direction of the portion of the fourth conductive structure that forms the gate electrode of the third transistor of the first transistor type, or wherein the fifth conductive structure includes a non-gate portion extending in the first direction away from the portion of the fifth conductive structure that forms the gate electrode of the third transistor of the second transistor type, wherein a size as measured in the first direction of the non-gate portion of the fifth conductive structure is greater than a size as measured in the first direction of the portion of the fifth conductive structure that forms the gate electrode of the third transistor of the second transistor type, orwherein the size as measured in the first direction of the non-gate portion of the fourth conductive structure is greater than the size as measured in the first direction of the portion of the fourth conductive structure that forms the gate electrode of the third transistor of the first transistor type, and the size as measured in the first direction of the non-gate portion of the fifth conductive structure is greater than the size as measured in the first direction of the portion of the fifth conductive structure that forms the gate electrode of the third transistor of the second transistor type. 16. The semiconductor chip as recited in claim 15, wherein at least one of the at least nine conductive structures within the region is a transistor-free conductive structure that does not form a gate electrode of any transistor, the transistor-free conductive structure positioned such that a distance as measured in the second direction between its lengthwise centerline and each lengthwise centerline of at least two others of the at least nine conductive structures is substantially equal to the first pitch, wherein the length of the transistor-free conductive structure is substantially equal to or greater than the length of any one of the at least nine conductive structures that forms gate electrodes of transistors of each of the first and second transistor types, andwherein either the first end or the second end of the transistor-free conductive structure is located at a given line extending in the second direction, and wherein either the first end or the second end of at least one of the at least nine conductive structures that forms at least one transistor gate electrode is located at the given line extending in the second direction. 17. The semiconductor chip as recited in claim 16, wherein the region includes a first connection forming conductive structure positioned to physically join to the top surface of the second conductive structure, wherein the first connection forming conductive structure is positioned a first connection distance away from a nearest gate electrode forming portion of the second conductive structure, the first connection distance measured in the first direction between closest located portions of the first connection forming conductive structure and the nearest gate electrode forming portion of the second conductive structure, wherein the region includes a second connection forming conductive structure positioned to physically join to the top surface of the third conductive structure, wherein the second connection forming conductive structure is positioned a second connection distance away from a nearest gate electrode forming portion of the third conductive structure, the second connection distance measured in the first direction between closest located portions of the second connection forming conductive structure and the nearest gate electrode forming portion of the third conductive structure,wherein the region includes a third connection forming conductive structure positioned to physically join to the top surface of the fourth conductive structure, wherein the third connection forming conductive structure is positioned a third connection distance away from a nearest gate electrode forming portion of the fourth conductive structure, the third connection distance measured in the first direction between closest located portions of the third connection forming conductive structure and the nearest gate electrode forming portion of the fourth conductive structure,wherein the region includes a fourth connection forming conductive structure positioned to physically join to the top surface of the fifth conductive structure, wherein the fourth connection forming conductive structure is positioned a fourth connection distance away from a nearest gate electrode forming portion of the fifth conductive structure, the fourth connection distance measured in the first direction between closest located portions of the fourth connection forming conductive structure and the nearest gate electrode forming portion of the fifth conductive structure,wherein at least two of the first, second, third, and fourth connection distances are different. 18. The semiconductor chip as recited in claim 17, wherein the eighth electrical connection includes one or more overlying interconnect conductive structures formed at a respective vertical position within the semiconductor chip overlying some of the at least nine conductive structures so as to be separated from the co-planar top surfaces of the at least nine conductive structures by at least one dielectric material, wherein the ninth electrical connection includes one or more overlying interconnect conductive structures formed at a respective vertical position within the semiconductor chip overlying some of the at least nine conductive structures so as to be separated from the co-planar top surfaces of the at least nine conductive structures by at least one dielectric material,wherein each overlying interconnect conductive structure that is part of at least one of the eighth and ninth electrical connections has a respective top surface with an entirety of a periphery of the respective top surface defined by a corresponding first end, a corresponding second end, a corresponding first edge, and a corresponding second edge, such that a total distance along the entirety of the periphery of the respective top surface is equal to a sum of a total distance along the corresponding first edge and a total distance along the corresponding second edge and a total distance along the corresponding first end and a total distance along the corresponding second end,wherein the total distance along the corresponding first edge is greater than two times the total distance along the corresponding first end and is greater than two times the total distance along the corresponding second end, wherein the total distance along the corresponding second edge is greater than two times the total distance along the corresponding first end and is greater than two times the total distance along the corresponding second end,wherein the corresponding first end extends from the corresponding first edge to the corresponding second edge and is located principally within a space between the corresponding first edge and the corresponding second edge, wherein the corresponding second end extends from the corresponding first edge to the corresponding second edge and is located principally within a space between the corresponding first edge and the corresponding second edge,wherein each overlying interconnect conductive structure that is part of at least one of the eighth and ninth electrical connections has a respective lengthwise centerline oriented along its respective top surface to extend from its corresponding first end to its corresponding second end, with each of the corresponding first edge and the corresponding second edge being substantially straight and oriented substantially parallel to its respective lengthwise centerline. 19. The semiconductor chip as recited in claim 14, wherein the eighth electrical connection includes one or more overlying interconnect conductive structures formed at a respective vertical position within the semiconductor chip overlying some of the at least nine conductive structures so as to be separated from the co-planar top surfaces of the at least nine conductive structures by at least one dielectric material, wherein the ninth electrical connection includes one or more overlying interconnect conductive structures formed at a respective vertical position within the semiconductor chip overlying some of the at least nine conductive structures so as to be separated from the co-planar top surfaces of the at least nine conductive structures by at least one dielectric material,wherein each overlying interconnect conductive structure that is part of at least one of the eighth and ninth electrical connections has a respective top surface with an entirety of a periphery of the respective top surface defined by a corresponding first end, a corresponding second end, a corresponding first edge, and a corresponding second edge, such that a total distance along the entirety of the periphery of the respective top surface is equal to a sum of a total distance along the corresponding first edge and a total distance along the corresponding second edge and a total distance along the corresponding first end and a total distance along the corresponding second end,wherein the total distance along the corresponding first edge is greater than two times the total distance along the corresponding first end and is greater than two times the total distance along the corresponding second end, wherein the total distance along the corresponding second edge is greater than two times the total distance along the corresponding first end and is greater than two times the total distance along the corresponding second end,wherein the corresponding first end extends from the corresponding first edge to the corresponding second edge and is located principally within a space between the corresponding first edge and the corresponding second edge, wherein the corresponding second end extends from the corresponding first edge to the corresponding second edge and is located principally within a space between the corresponding first edge and the corresponding second edge,wherein each overlying interconnect conductive structure that is part of at least one of the eighth and ninth electrical connections has a respective lengthwise centerline oriented along its respective top surface to extend from its corresponding first end to its corresponding second end, with each of the corresponding first edge and the corresponding second edge being substantially straight and oriented substantially parallel to its respective lengthwise centerline. 20. The semiconductor chip as recited in claim 14, wherein at least two of the first conductive structure, the second conductive structure, the third conductive structure, the fourth conductive structure, and the fifth conductive structure have different lengths. 21. The semiconductor chip as recited in claim 20, wherein the region includes a first connection forming conductive structure positioned to physically join to the top surface of the second conductive structure, wherein the first connection forming conductive structure is positioned a first connection distance away from a nearest gate electrode forming portion of the second conductive structure, the first connection distance measured in the first direction between closest located portions of the first connection forming conductive structure and the nearest gate electrode forming portion of the second conductive structure, wherein the region includes a second connection forming conductive structure positioned to physically join to the top surface of the third conductive structure, wherein the second connection forming conductive structure is positioned a second connection distance away from a nearest gate electrode forming portion of the third conductive structure, the second connection distance measured in the first direction between closest located portions of the second connection forming conductive structure and the nearest gate electrode forming portion of the third conductive structure,wherein the region includes a third connection forming conductive structure positioned to physically join to the top surface of the fourth conductive structure, wherein the third connection forming conductive structure is positioned a third connection distance away from a nearest gate electrode forming portion of the fourth conductive structure, the third connection distance measured in the first direction between closest located portions of the third connection forming conductive structure and the nearest gate electrode forming portion of the fourth conductive structure,wherein the region includes a fourth connection forming conductive structure positioned to physically join to the top surface of the fifth conductive structure, wherein the fourth connection forming conductive structure is positioned a fourth connection distance away from a nearest gate electrode forming portion of the fifth conductive structure, the fourth connection distance measured in the first direction between closest located portions of the fourth connection forming conductive structure and the nearest gate electrode forming portion of the fifth conductive structure,wherein at least two of the first, second, third, and fourth connection distances are different. 22. The semiconductor chip as recited in claim 21, wherein the first connection forming conductive structure is positioned a first extension distance away from an extension end of the second conductive structure, wherein the extension end of the second conductive structure is either the first end or the second end of the second conductive structure, the first extension distance measured in the first direction pointing away from the gate electrode of the second transistor of the first transistor type from a location on the first connection forming conductive structure closest to the extension end of the second conductive structure, wherein the second connection forming conductive structure is positioned a second extension distance away from an extension end of the third conductive structure, wherein the extension end of the third conductive structure is either the first end or the second end of the third conductive structure, the second extension distance measured in the first direction pointing away from the gate electrode of the second transistor of the second transistor type from a location on the second connection forming conductive structure closest to the extension end of the third conductive structure,wherein the third connection forming conductive structure is positioned a third extension distance away from an extension end of the fourth conductive structure, wherein the extension end of the fourth conductive structure is either the first end or the second end of the fourth conductive structure, the third extension distance measured in the first direction pointing away from the gate electrode of the third transistor of the first transistor type from a location on the third connection forming conductive structure closest to the extension end of the fourth conductive structure,wherein the fourth connection forming conductive structure is positioned a fourth extension distance away from an extension end of the fifth conductive structure, wherein the extension end of the fifth conductive structure is either the first end or the second end of the fifth conductive structure, the fourth extension distance measured in the first direction pointing away from the gate electrode of the third transistor of the second transistor type from a location on the fourth connection forming conductive structure closest to the extension end of the fifth conductive structure, andwherein at least two of the first, second, third, and fourth extension distances are different. 23. The semiconductor chip as recited in claim 22, wherein the fourth conductive structure includes a non-gate portion extending in the first direction away from the portion of the fourth conductive structure that forms the gate electrode of the third transistor of the first transistor type, wherein a size as measured in the first direction of the non-gate portion of the fourth conductive structure is greater than a size as measured in the first direction of the portion of the fourth conductive structure that forms the gate electrode of the third transistor of the first transistor type, or wherein the fifth conductive structure includes a non-gate portion extending in the first direction away from the portion of the fifth conductive structure that forms the gate electrode of the third transistor of the second transistor type, wherein a size as measured in the first direction of the non-gate portion of the fifth conductive structure is greater than a size as measured in the first direction of the portion of the fifth conductive structure that forms the gate electrode of the third transistor of the second transistor type, orwherein the size as measured in the first direction of the non-gate portion of the fourth conductive structure is greater than the size as measured in the first direction of the portion of the fourth conductive structure that forms the gate electrode of the third transistor of the first transistor type, and the size as measured in the first direction of the non-gate portion of the fifth conductive structure is greater than the size as measured in the first direction of the portion of the fifth conductive structure that forms the gate electrode of the third transistor of the second transistor type. 24. The semiconductor chip as recited in claim 23, wherein at least one of the first, second, third, and fourth connection forming conductive structures is positioned at a respective location that is not directly above any gate electrode of any transistor of the first collection of transistors and that is not directly above any gate electrode of any transistor of the second collection of transistors and that is not directly above the inner sub-region of the region. 25. The semiconductor chip as recited in claim 21, wherein at least one of the at least nine conductive structures within the region is a transistor-free conductive structure that does not form a gate electrode of any transistor, the transistor-free conductive structure positioned such that a distance as measured in the second direction between its lengthwise centerline and each lengthwise centerline of at least two others of the at least nine conductive structures is substantially equal to the first pitch, wherein the length of the transistor-free conductive structure is substantially equal to or greater than the length of any one of the at least nine conductive structures that forms gate electrodes of transistors of each of the first and second transistor types, andwherein either the first end or the second end of the transistor-free conductive structure is located at a given line extending in the second direction, and wherein either the first end or the second end of at least one of the at least nine conductive structures that forms at least one transistor gate electrode is located at the given line extending in the second direction. 26. The semiconductor chip as recited in claim 25, wherein the first connection forming conductive structure is positioned a first extension distance away from an extension end of the second conductive structure, wherein the extension end of the second conductive structure is either the first end or the second end of the second conductive structure, the first extension distance measured in the first direction pointing away from the gate electrode of the second transistor of the first transistor type from a location on the first connection forming conductive structure closest to the extension end of the second conductive structure, wherein the second connection forming conductive structure is positioned a second extension distance away from an extension end of the third conductive structure, wherein the extension end of the third conductive structure is either the first end or the second end of the third conductive structure, the second extension distance measured in the first direction pointing away from the gate electrode of the second transistor of the second transistor type from a location on the second connection forming conductive structure closest to the extension end of the third conductive structure,wherein the third connection forming conductive structure is positioned a third extension distance away from an extension end of the fourth conductive structure, wherein the extension end of the fourth conductive structure is either the first end or the second end of the fourth conductive structure, the third extension distance measured in the first direction pointing away from the gate electrode of the third transistor of the first transistor type from a location on the third connection forming conductive structure closest to the extension end of the fourth conductive structure,wherein the fourth connection forming conductive structure is positioned a fourth extension distance away from an extension end of the fifth conductive structure, wherein the extension end of the fifth conductive structure is either the first end or the second end of the fifth conductive structure, the fourth extension distance measured in the first direction pointing away from the gate electrode of the third transistor of the second transistor type from a location on the fourth connection forming conductive structure closest to the extension end of the fifth conductive structure, andwherein at least two of the first, second, third, and fourth extension distances are different. 27. The semiconductor chip as recited in claim 26, wherein at least one of the first, second, third, and fourth connection forming conductive structures is positioned at a respective location that is not directly above any gate electrode of any transistor of the first collection of transistors and that is not directly above any gate electrode of any transistor of the second collection of transistors and that is not directly above the inner sub-region of the region. 28. The semiconductor chip as recited in claim 26, wherein the first connection forming conductive structure is formed to extend in a vertical direction substantially perpendicular to a substrate of the semiconductor chip from the top surface of the second conductive structure through a dielectric material to contact at least one interconnect conductive structure, wherein the second connection forming conductive structure is formed to extend in the vertical direction substantially perpendicular to the substrate of the semiconductor chip from the top surface of the third conductive structure through a dielectric material to contact at least one interconnect conductive structure,wherein the third connection forming conductive structure is formed to extend in the vertical direction substantially perpendicular to the substrate of the semiconductor chip from the top surface of the fourth conductive structure through a dielectric material to contact at least one interconnect conductive structure,wherein the fourth connection forming conductive structure is formed to extend in the vertical direction substantially perpendicular to the substrate of the semiconductor chip from the top surface of the fifth conductive structure through a dielectric material to contact at least one interconnect conductive structure,wherein the region includes a fifth connection forming conductive structure positioned to physically join to the top surface of the first conductive structure, wherein the fifth connection forming conductive structure is formed to extend in the vertical direction substantially perpendicular to the substrate of the semiconductor chip from the top surface of the first conductive structure through a dielectric material to contact at least one interconnect conductive structure, andwherein the region includes a sixth connection forming conductive structure positioned to physically join to the top surface of the sixth conductive structure, wherein the sixth connection forming conductive structure is formed to extend in the vertical direction substantially perpendicular to the substrate of the semiconductor chip from the top surface of the sixth conductive structure through a dielectric material to contact at least one interconnect conductive structure. 29. The semiconductor chip as recited in claim 28, wherein the first connection forming conductive structure is substantially centered in the second direction upon the second conductive structure, wherein the second connection forming conductive structure is substantially centered in the second direction upon the third conductive structure,wherein the third connection forming conductive structure is substantially centered in the second direction upon the fourth conductive structure,wherein the fourth connection forming conductive structure is substantially centered in the second direction upon the fifth conductive structure, andwherein the fifth connection forming conductive structure is substantially centered in the second direction upon the first conductive structure. 30. A method for manufacturing an integrated circuit within a semiconductor chip, comprising: forming a plurality of transistors within a region of the semiconductor chip, each of the plurality of transistors in the region forming part of circuitry associated with execution of one or more logic functions, the plurality of transistors having respective gate electrodes formed by some of at least nine conductive structures present within the region,wherein forming the plurality of transistors includes forming each of the at least nine conductive structures to respectively have a corresponding top surface, wherein an entirety of a periphery of the corresponding top surface is defined by a corresponding first end, a corresponding second end, a corresponding first edge, and a corresponding second edge, such that a total distance along the entirety of the periphery of the corresponding top surface is equal to a sum of a total distance along the corresponding first edge and a total distance along the corresponding second edge and a total distance along the corresponding first end and a total distance along the corresponding second end,wherein the total distance along the corresponding first edge is greater than two times the total distance along the corresponding first end,wherein the total distance along the corresponding first edge is greater than two times the total distance along the corresponding second end,wherein the total distance along the corresponding second edge is greater than two times the total distance along the corresponding first end,wherein the total distance along the corresponding second edge is greater than two times the total distance along the corresponding second end,wherein the corresponding first end extends from the corresponding first edge to the corresponding second edge and is located principally within a space between the corresponding first and second edges,wherein the corresponding second end extends from the corresponding first edge to the corresponding second edge and is located principally within the space between the corresponding first and second edges,the top surfaces of the at least nine conductive structures co-planar with each other,each of the at least nine conductive structures having a corresponding lengthwise centerline oriented in a first direction along its top surface and extending from its first end to its second end,each of the at least nine conductive structures having a length as measured along its lengthwise centerline from its first end to its second end,wherein the first edge of each of the at least nine conductive structures is substantially straight,wherein the second edge of each of the at least nine conductive structures is substantially straight,each of the at least nine conductive structures having both its first edge and its second edge oriented substantially parallel to its lengthwise centerline,each of the at least nine conductive structures having a width measured in a second direction perpendicular to the first direction at a midpoint of its lengthwise centerline,each of the first direction and the second direction oriented substantially parallel to the co-planar top surfaces of the at least nine conductive structures,wherein forming the plurality of transistors includes positioning the at least nine conductive structures in a side-by-side manner such that each of the at least nine conductive structures is positioned to have at least a portion of its length beside at least a portion of the length of another of the at least nine conductive structures,wherein the width of each of the at least nine conductive structures is less than 45 nanometers, each of the at least nine conductive structures positioned such that a distance as measured in the second direction between its lengthwise centerline and the lengthwise centerline of at least one other of the at least nine conductive structures is substantially equal to a first pitch that is less than or equal to about 193 nanometers,wherein the at least nine conductive structures includes a first conductive structure, the first conductive structure including a portion that forms a gate electrode of a first transistor of a first transistor type, the first conductive structure also including a portion that forms a gate electrode of a first transistor of a second transistor type,wherein the at least nine conductive structures includes a second conductive structure, the second conductive structure including a portion that forms a gate electrode of a second transistor of the first transistor type, wherein any transistor having its gate electrode formed by the second conductive structure is of the first transistor type,wherein the at least nine conductive structures includes a third conductive structure, the third conductive structure including a portion that forms a gate electrode of a second transistor of the second transistor type, wherein any transistor having its gate electrode formed by the third conductive structure is of the second transistor type,wherein the at least nine conductive structures includes a fourth conductive structure, the fourth conductive structure including a portion that forms a gate electrode of a third transistor of the first transistor type, wherein any transistor having its gate electrode formed by the fourth conductive structure is of the first transistor type,wherein the at least nine conductive structures includes a fifth conductive structure, the fifth conductive structure including a portion that forms a gate electrode of a third transistor of the second transistor type, wherein any transistor having its gate electrode formed by the fifth conductive structure is of the second transistor type,wherein the at least nine conductive structures includes a sixth conductive structure, the sixth conductive structure including a portion that forms a gate electrode of a fourth transistor of the first transistor type, the sixth conductive structure also including a portion that forms a gate electrode of a fourth transistor of the second transistor type,wherein the first transistor of the first transistor type includes a first diffusion terminal and the second transistor of the first transistor type includes a first diffusion terminal, the first diffusion terminal of the first transistor of the first transistor type electrically connected to the first diffusion terminal of the second transistor of the first transistor type through a first electrical connection,wherein the first transistor of the second transistor type includes a first diffusion terminal, and the second transistor of the second transistor type includes a first diffusion terminal, the first diffusion terminal of the first transistor of the second transistor type electrically connected to the first diffusion terminal of the second transistor of the second transistor type through a second electrical connection,wherein the second transistor of the first transistor type includes a second diffusion terminal, and the third transistor of the first transistor type includes a first diffusion terminal, the second diffusion terminal of the second transistor of the first transistor type electrically connected to the first diffusion terminal of the third transistor of the first transistor type through a third electrical connection,wherein the second transistor of the second transistor type includes a second diffusion terminal, and the third transistor of the second transistor type includes a first diffusion terminal, the second diffusion terminal of the second transistor of the second transistor type electrically connected to the first diffusion terminal of the third transistor of the second transistor type through a fourth electrical connection,wherein the third transistor of the first transistor type includes a second diffusion terminal, and the fourth transistor of the first transistor type includes a first diffusion terminal, the second diffusion terminal of the third transistor of the first transistor type electrically connected to the first diffusion terminal of the fourth transistor of the first transistor type through a fifth electrical connection,wherein the third transistor of the second transistor type includes a second diffusion terminal, and the fourth transistor of the second transistor type includes a first diffusion terminal, the second diffusion terminal of the third transistor of the second transistor type electrically connected to the first diffusion terminal of the fourth transistor of the second transistor type through a sixth electrical connection,wherein the third electrical connection is electrically connected to the fourth electrical connection through a seventh electrical connection,wherein the gate electrode of the second transistor of the first transistor type is electrically connected to the gate electrode of the third transistor of the second transistor type through an eighth electrical connection,wherein the gate electrode of the third transistor of the first transistor type is electrically connected to the gate electrode of the second transistor of the second transistor type through a ninth electrical connection,wherein the lengthwise centerline of the second conductive structure is substantially aligned with the lengthwise centerline of the third conductive structure,wherein the lengthwise centerline of the fourth conductive structure is separated from the lengthwise centerline of the fifth conductive structure by a distance greater than zero as measured in the second direction, andwherein each transistor of the first transistor type having its gate electrode formed by any of the at least nine conductive structures is included in a first collection of transistors, and wherein each transistor of the second transistor type having its gate electrode formed by any of the at least nine conductive structures is included in a second collection of transistors, wherein the first collection of transistors is separated from the second collection of transistors by an inner sub-region of the region, wherein the inner sub-region does not include a source or a drain of any transistor.
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