Method of growing nitride single crystal and method of manufacturing nitride semiconductor device
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-033/00
H01L-021/02
출원번호
US-0594058
(2015-01-09)
등록번호
US-9871162
(2018-01-16)
우선권정보
KR-10-2014-0049984 (2014-04-25)
발명자
/ 주소
Solari, William
Kim, Min Ho
Lee, Heon Ho
출원인 / 주소
SAMSUNG ELECTRONICS CO., LTD.
대리인 / 주소
Lee & Morse, P.C.
인용정보
피인용 횟수 :
0인용 특허 :
39
초록▼
A method of growing a Group-III nitride crystal includes forming a buffer layer on a silicon substrate and growing a Group-III nitride crystal on the buffer layer. The method of growing of a Group-III nitride crystal is executed through metal-organic chemical vapor deposition (MOCVD) during which a
A method of growing a Group-III nitride crystal includes forming a buffer layer on a silicon substrate and growing a Group-III nitride crystal on the buffer layer. The method of growing of a Group-III nitride crystal is executed through metal-organic chemical vapor deposition (MOCVD) during which a Group-III metal source and a nitrogen source gas are provided. The nitrogen source gas includes hydrogen (H2) and at least one of ammonia (NH3) and nitrogen (N2). At least a partial stage of the operation of growing the Group-III nitride crystal can be executed under conditions in which a volume fraction of hydrogen in the nitrogen source gas ranges from 20% to 40% and a temperature of the silicon substrate ranges from 950° C. to 1040° C.
대표청구항▼
1. A method of growing a Group-III nitride semiconductor, the method comprising steps of: forming an AlN nucleation layer on a substrate containing silicon (Si);forming a lattice buffer layer on the AlN nucleation layer, the lattice buffer layer being formed of a nitride crystal containing aluminum
1. A method of growing a Group-III nitride semiconductor, the method comprising steps of: forming an AlN nucleation layer on a substrate containing silicon (Si);forming a lattice buffer layer on the AlN nucleation layer, the lattice buffer layer being formed of a nitride crystal containing aluminum (Al);forming a stress compensation layer on the lattice buffer layer; andforming a light emitting structure on the stress compensation layer by performing steps of: forming a first conductivity-type nitride semiconductor layer on the stress compensation layer;forming an active layer on the first conductivity-type nitride semiconductor layer; andforming a second conductivity-type nitride semiconductor layer on the active layer,wherein the step of forming the lattice buffer layer is performed by providing concurrently with a metal source gas, to an interior of a reaction chamber having the substrate, a nitrogen source gas having a volume fraction of hydrogen in a range of 20% to 40%, while maintaining the substrate at the temperature of 950° C. to 1040° C.,wherein the metal source gas is provided to the substrate via a metal source gas supply line and the nitrogen source gas is provided to the substrate via a nitrogen source gas supply line that is separate from the metal source gas supply line. 2. The method of claim 1, wherein the step of forming the stress compensation layer on the buffer layer comprises: forming, on the lattice buffer layer, a first nitride semiconductor layer having a lattice constant greater than that of the lattice buffer layer;forming, on the first nitride semiconductor layer, an intermediate layer including a nitride crystal having a lattice constant smaller than that of the first nitride semiconductor layer; andforming, on the intermediate layer, a second nitride semiconductor layer having a same composition as the first nitride semiconductor layer. 3. The method of claim 1, further comprising: mounting the light emitting structure on a permanent substrate by bonding the second conductivity-type nitride semiconductor layer to the permanent substrate; andremoving the silicon substrate, the buffer layer, and the stress compensation layer to expose the first conductivity-type nitride semiconductor layer of the light emitting structure. 4. The method of claim 1, wherein the nitrogen source gas has a volume fraction of hydrogen in a range of 20% to 35%, and wherein the substrate is maintained at a temperature of 970° C. to 1035° C. 5. A method of forming a nitride crystal on a substrate, the method comprising steps of: forming, on a surface of a substrate containing silicon, a buffer layer including a nucleation layer and a lattice buffer layer; andforming a stress compensation layer on the lattice buffer layer, the step of forming the stress compensation layer comprising sequentially forming a first nitride semiconductor layer having a lattice constant greater than that of the lattice buffer layer, an intermediate layer having a lattice constant smaller than that of the first nitride semiconductor layer, and a second nitride semiconductor layer on the lattice buffer layer such that the second nitride semiconductor layer is directly on the intermediate layer, andforming a light emitting structure on the second nitride semiconductor layer by performing steps of: forming a first conductivity-type nitride semiconductor layer on the second nitride semiconductor layer;forming an active layer on the first conductivity-type nitride semiconductor layer; andforming a second conductivity-type nitride semiconductor layer on the active layer,wherein at least a portion of the forming of each of the first nitride semiconductor layer, the intermediate layer, and the second nitride semiconductor layer is performed by providing a nitrogen source gas including hydrogen provided at a flow rate of 20000 sccm to 70000 sccmwhile maintaining the substrate at a temperature of 950° C. to 1040° C. 6. The method of claim 1, wherein melt-back defects that occur in the nitride crystal have an average size of 400 μm or less. 7. The method of claim 6, wherein the nitride crystal is formed to have no more than 1% of melt-back defects having a diameter of 400 μm or greater. 8. The method of claim 6, wherein at least a portion of the forming of each of the first nitride semiconductor layer, the intermediate layer, and the second nitride semiconductor layer is performed by concurrently providing, to an interior of a reaction chamber having the substrate, a metal source gas and a nitrogen source gas wherein the nitrogen source gas has a volume fraction of hydrogen in a range of 20% to 40%. 9. The method of claim 5, wherein the lattice buffer layer is formed of a nitride crystal containing aluminum (Al). 10. The method of claim 5, wherein the step of forming the lattice buffer layer is performed by providing concurrently with a metal source gas, to an interior of a reaction chamber having the substrate, a nitrogen source gas having a volume fraction of hydrogen in a range of 20% to 40%, while maintaining the substrate at the temperature of 950° C. to 1040° C.
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