초록 ▼

The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigm

The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors.

대표청구항 ▼

1. A detector of visible and near-infrared radiation comprising: a layer of a material optimized for near-infrared detection,a near-infrared photosensitive element formed in the layer of the material optimized for near-infrared detection,a silicon substrate having a frontside covered with the layer

1. A detector of visible and near-infrared radiation comprising: a layer of a material optimized for near-infrared detection,a near-infrared photosensitive element formed in the layer of the material optimized for near-infrared detection,a silicon substrate having a frontside covered with the layer of the material optimized for near-infrared detection,a readout circuit for reading the near-infrared photosensitive element, formed on the frontside of the silicon substrate,metal tracks arranged so as to electrically connect the near-infrared photosensitive element and the readout circuit, and so as to be offset towards an edge of the near-infrared photosensitive element,four visible photosensitive elements formed in the silicon substrate, one of the visible photosensitive elements being arranged in front of the near-infrared photosensitive element,four pigmented resin filters arranged at a backside of the silicon substrate to define a pixel quadruplet, one resin filter being opaque to visible radiation and the three other resin filters being respectively associated with three elementary colors,wherein a first pixel of the pixel quadruplet, comprising the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with the resin filter opaque to visible radiation, and the three other pixels of the pixel quadruplet, respectively comprising the three other visible photosensitive elements, are respectively provided with the three other resin filters. 2. The detector according to claim 1, wherein the near-infrared photosensitive element of the first pixel extends over the three other pixels. 3. The detector according to claim 1, comprising four near-infrared photosensitive elements formed in the layer of the material optimized for near-infrared detection, respectively facing the four visible photosensitive elements, whereby each pixel of the pixel quadruplet comprises one visible photosensitive element and one near-infrared photosensitive element. 4. The detector according to claim 1, wherein the resin of the filter opaque to visible radiation comprises a polymer and at least one pigment capable of blocking visible radiation. 5. The detector according to claim 4, wherein the polymer is selected from among acrylics, polyparaphenylenes vinylenes, polyanilines, polyazines, polythiophenes, polyparaphenylenes, polyfurannes, and polypyrroles. 6. The detector according to claim 4, wherein the pigment is a black fluorinated carbon. 7. The detector according to claim 4, wherein the resin of the filter opaque to visible radiation comprises a mixture of blue, purple, and yellow pigments or a mixture of purple and yellow pigments. 8. The detector according to claim 1, wherein the near-infrared photosensitive element comprises a material configured to optimize sensitivity to near-infrared radiation. 9. The detector according to claim 8, wherein the material configured to optimize sensitivity to near-infrared radiation has a bandgap in the range of less than 0.8 eV. 10. The detector according to claim 1, wherein the near-infrared photosensitive element comprises at least one of an n-type doped InP layer, an intrinsic InGaAs absorption layer, and a p-type doped InP layer. 11. The detector according to claim 10, wherein the near-infrared photosensitive element comprises the intrinsic InGaAs absorption layer. 12. The detector according to claim 1, wherein each pixel of the pixel quadruplet is arranged at a same level of the silicon substrate with respect to an incident electromagnetic radiation direction. 13. The detector according to claim 1, wherein the near-infrared photosensitive element is formed of a different material than the four visible photosensitive elements. 14. The detector according to claim 1, wherein the one of the visible photosensitive elements is arranged in front of the near-infrared photosensitive element with respect to an incident electromagnetic radiation direction. 15. The detector according to claim 1, wherein the four pigmented resin filters, the silicon substrate, the metal tracks and the near-infrared photosensitive element are arranged in sequential order with respect to an incident electromagnetic radiation direction. 16. A detector of visible and near-infrared radiation comprising: a layer of a material optimized for near-infrared detection,a near-infrared photosensitive element formed in the layer of the material optimized for near-infrared detection,a silicon substrate having a frontside covered with the layer of the material optimized for near-infrared detection,a readout circuit for reading the near-infrared photosensitive element, formed on the frontside of the silicon substrate,metal tracks arranged so as to electrically connect the near-infrared photosensitive element and the readout circuit so as to collect and transport photogenerated charges from the near-infrared photosensitive element to the readout circuit, and so as to be offset towards an edge of the near-infrared photosensitive element,four visible photosensitive elements formed in the silicon substrate, one of the visible photosensitive elements being arranged in front of the near-infrared photosensitive element,four pigmented resin filters arranged at a backside of the silicon substrate to define a pixel quadruplet, one resin filter being opaque to visible radiation and the three other resin filters being respectively associated with three elementary colors,wherein a first pixel of the pixel quadruplet, comprising the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with the resin filter opaque to visible radiation, and the three other pixels of the pixel quadruplet, respectively comprising the three other visible photosensitive elements, are respectively provided with the three other resin filters. 17. A detector of visible and near-infrared radiation comprising: a layer of a material optimized for near-infrared detection,a near-infrared photosensitive element formed in the layer of the material optimized for near-infrared detection,a silicon substrate having a frontside covered with the layer of the material optimized for near-infrared detection,a readout circuit for reading the near-infrared photosensitive element, formed on the frontside of the silicon substrate,metal tracks arranged so as to electrically connect the near-infrared photosensitive element and the readout circuit so as to add photogenerated charges in the near-infrared photosensitive element to photogenerated charges in visible photosensitive elements being arranged in front of the near-infrared photosensitive element, and so as to be offset towards an edge of the near-infrared photosensitive element,four pigmented resin filters arranged at a backside of the silicon substrate to define a pixel quadruplet, one resin filter being opaque to visible radiation and the three other resin filters being respectively associated with three elementary colors,wherein a first pixel of the pixel quadruplet, comprising the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with the resin filter opaque to visible radiation, and the three other pixels of the pixel quadruplet, respectively comprising the three other visible photosensitive elements, are respectively provided with the three other resin filters.