To provide a sputtering target which enables an oxide film containing a plurality of metal elements and having high crystallinity. A plurality of raw materials are mixed and first baking is performed thereon, whereby a crystalline oxide is formed. The crystalline oxide is ground to form a crystallin
To provide a sputtering target which enables an oxide film containing a plurality of metal elements and having high crystallinity. A plurality of raw materials are mixed and first baking is performed thereon, whereby a crystalline oxide is formed. The crystalline oxide is ground to form a crystalline oxide powder. The crystalline oxide powder is mixed with water and an organic substance to make slurry, and the slurry is poured into a mold provided with a filter. The water and the organic substance are removed from the slurry through the filter, so that a molded body is formed. The residual water and the residual organic substance in the molded body are removed, and then second baking is performed.
대표청구항▼
1. A method for forming a sputtering target comprising the steps of: mixing raw materials;forming a crystalline oxide by performing a first baking of the raw materials;forming a crystalline oxide powder by grinding the crystalline oxide;uniformizing particle sizes of the crystalline oxide powder by
1. A method for forming a sputtering target comprising the steps of: mixing raw materials;forming a crystalline oxide by performing a first baking of the raw materials;forming a crystalline oxide powder by grinding the crystalline oxide;uniformizing particle sizes of the crystalline oxide powder by using a first sieve through which a particle with a size less than or equal to 1 μm passes and a second sieve through which a particle with a size less than 0.01 μm passes; and thenobtaining slurry by mixing the crystalline oxide powder with water and an organic substance;pouring the slurry into a mold provided with a filter;removing the water and the organic substance from the slurry through the filter, thereby forming a molded body;removing residual water and residual organic substance in the molded body by performing a heat treatment;pressing the molded body after the heat treatment; and thenperforming a second baking of the molded body,wherein a first step of the first baking is performed in an inert atmosphere and a second step of the first baking is performed in an oxidation atmosphere, andwherein the second baking is performed at a higher temperature than a temperature of the heat treatment. 2. The method for forming a sputtering target according to claim 1, wherein the first baking is performed at a temperature from 1200° C. to 1700° C. for a period from 1 hour to 72 hours. 3. The method for forming a sputtering target according to claim 1, wherein the second baking is performed at a temperature from 1200° C. to 1400° C. for a period from 1 hour to 72 hours in an inert atmosphere or an oxidation atmosphere. 4. The method for forming a sputtering target according to claim 1, wherein the particle sizes of the crystalline oxide powder is made to be greater than or equal to 0.01 μm and less than or equal to 1 μm. 5. The method for forming a sputtering target according to claim 1, wherein the raw materials are an indium oxide, a gallium oxide, and a zinc oxide. 6. The method for forming a sputtering target according to claim 1, wherein the heat treatment is performed at a temperature from 300° C. to 700° C. 7. A method for forming a sputtering target comprising the steps of: mixing raw materials;forming a crystalline oxide by performing a first baking of the raw materials;forming a crystalline oxide powder by grinding the crystalline oxide;uniformizing particle sizes of the crystalline oxide powder by using a first sieve through which a particle with a size less than or equal to 1 μm passes and a second sieve through which a particle with a size less than 0.01 μm passes; and thenobtaining slurry by mixing the crystalline oxide powder with water and an organic substance;pouring the slurry into a mold provided with a filter;removing the water and the organic substance from the slurry through the filter, thereby forming a molded body;removing residual water and residual organic substance in the molded body, thereby providing voids in the molded body;pressing the molded body to reduce the voids in the molded body; and thenperforming a second baking of the molded body,wherein a first step of the first baking is performed in an inert atmosphere and a second step of the first baking is performed in an oxidation atmosphere, andwherein the second baking is performed at a lower temperature than a temperature of the first baking. 8. The method for forming a sputtering target according to claim 7, wherein the first baking is performed at a temperature from 1200° C. to 1700° C. for a period from 1 hour to 72 hours. 9. The method for forming a sputtering target according to claim 7, wherein the second baking is performed at a temperature from 1200° C. to 1400° C. for a period from 1 hour to 72 hours in an inert atmosphere or an oxidation atmosphere. 10. The method for forming a sputtering target according to claim 7, wherein the particle sizes of the crystalline oxide powder is made to be greater than or equal to 0.01 μm and less than or equal to 1 μm. 11. The method for forming a sputtering target according to claim 7, wherein the raw materials are an indium oxide, a gallium oxide, and a zinc oxide. 12. The method for forming a sputtering target according to claim 7, wherein in the step of pressing, the molded body is pressed using a weight or compressed air. 13. A method for forming a sputtering target comprising the steps of: mixing raw materials;forming a crystalline oxide by performing a first baking of the raw materials;forming a crystalline oxide powder by grinding the crystalline oxide;uniformizing particle sizes of the crystalline oxide powder by using a first sieve through which a particle with a size less than or equal to 1 μm passes and a second sieve through which a particle with a size less than 0.01 μm passes; and thenobtaining slurry by mixing the crystalline oxide powder with water and an organic substance;pouring the slurry into a mold provided with a filter;removing the water and the organic substance from the slurry through the filter, thereby forming a molded body;removing residual water and residual organic substance in the molded body; andpressing the molded body while performing a second baking,wherein a first step of the first baking is performed in an inert atmosphere and a second step of the first baking is performed in an oxidation atmosphere, andwherein the second baking is performed at a lower temperature than a temperature of the first baking. 14. The method for forming a sputtering target according to claim 13, wherein the first baking is performed at a temperature from 1200° C. to 1700° C. for a period from 1 hour to 72 hours. 15. The method for forming a sputtering target according to claim 13, wherein the second baking is performed at a temperature from 1200° C. to 1400° C. for a period from 1 hour to 72 hours in an inert atmosphere or an oxidation atmosphere. 16. The method for forming a sputtering target according to claim 13, wherein the particle sizes of the crystalline oxide powder is made to be greater than or equal to 0.01 μm and less than or equal to 1 μm. 17. The method for forming a sputtering target according to claim 13, wherein the raw materials are an indium oxide, a gallium oxide, and a zinc oxide. 18. The method for forming a sputtering target according to claim 13, wherein in the step of pressing, the molded body is pressed using a weight or compressed air.
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