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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0486105 (2014-09-15) |
등록번호 | US-9903020 (2018-02-27) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 17 인용 특허 : 765 |
A process for generating a compact alumina passivation layer on an aluminum component includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to concentrated nitric acid, at a temperature below 10° C., for one to 30 minutes. The p
A process for generating a compact alumina passivation layer on an aluminum component includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to concentrated nitric acid, at a temperature below 10° C., for one to 30 minutes. The process also includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to NH4OH for one second to one minute. The process further includes rinsing the component in deionized water for at least one minute and drying it for at least one minute. A component for use in a plasma processing system includes an aluminum component coated with an AlxOy film having a thickness of 4 to 8 nm and a surface roughness less than 0.05 μm greater than a surface roughness of the component without the AlxOy film.
1. A process for generating a compact alumina passivation layer on an aluminum component, comprising: rinsing the aluminum component in deionized water for at least one minute;drying the aluminum component for at least one minute;exposing the aluminum component to nitric acid (HNO3) having a concent
1. A process for generating a compact alumina passivation layer on an aluminum component, comprising: rinsing the aluminum component in deionized water for at least one minute;drying the aluminum component for at least one minute;exposing the aluminum component to nitric acid (HNO3) having a concentration of at least 30 percent, at a temperature below 10° C., for between one and 30 minutes;rinsing the aluminum component in deionized water for at least one minute;drying the aluminum component for at least one minute;exposing the aluminum component to NH4OH for between one second and one minute;rinsing the aluminum component in deionized water for at least one minute; anddrying the aluminum component for at least one minute. 2. The process of claim 1, wherein the HNO3 has a concentration of at least 60%. 3. The process of claim 1, wherein the HNO3 has a temperature of 5° C. or below. 4. The process of claim 1, wherein exposing comprises soaking the aluminum component in the HNO3 for between one minute and 15 minutes. 5. The process of claim 1, wherein exposing the aluminum component to the NH4OH comprises dipping the aluminum component in the NH4OH for between one and ten seconds.
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