Pressed and self sintered polymer derived SiC materials, applications and devices
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C08L-083/04
C04B-035/571
C01B-031/36
C04B-035/56
C04B-035/80
C08G-077/20
C08G-077/50
C08G-077/12
C08G-077/00
출원번호
US-0864498
(2015-09-24)
등록번호
US-9919972
(2018-03-20)
발명자
/ 주소
Land, Mark S.
Diwanji, Ashish P.
Hopkins, Andrew R.
Sherwood, Walter J.
Dukes, Douglas M.
Sandgren, Glenn
Benac, Brian L.
출원인 / 주소
Melior Innovations, Inc.
대리인 / 주소
Belvis, Glen P.
인용정보
피인용 횟수 :
0인용 특허 :
49
초록
Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
대표청구항▼
1. An article, the article comprising: a. a monolithic self sintered polysilocarb derived silicon carbide composition;b. the self sintered polysilocarb derived silicon carbide composition comprising a plurality of submicron size silicon carbide particles sintered together, thereby forming a monolith
1. An article, the article comprising: a. a monolithic self sintered polysilocarb derived silicon carbide composition;b. the self sintered polysilocarb derived silicon carbide composition comprising a plurality of submicron size silicon carbide particles sintered together, thereby forming a monolithic SiC structure, wherein the structure is free from sintering aids. 2. The article of claim 1, wherein the polysilocarb is solvent free and has a molar ratio of about 30% to 85% carbon, about 5% to 40% oxygen, and about 5% to 35% silicon. 3. The article of claim 1, wherein the polysilocarb has a molar ratio of about 50% to 65% carbon, about 20% to 30% oxygen, and about 15% to 20% silicon. 4. The article of claim 1, wherein the silicon carbide particles have total impurities of less than 0.1 ppm and less than about 0.1 ppm in total of the elements selected from the group consisting of Al, Fe, B, P, Pt, Ca, Mg, Li, Na, Ni, V, Pr, Ce, Cr, S and As. 5. The article of claim 1, wherein the silicon carbide particles have total impurities of less 0.1 ppm and less than about 0.1 ppm in total of the elements selected from the group consisting of Al, Fe, B, P, and Ti. 6. The article of claim 1, wherein the silicon carbide particles have total impurities of less than 0.1 ppm and less than about 0.1 ppm in total of the elements selected from the group consisting of Al, Fe, B, Ti and P. 7. The article of claim 1, wherein the silicon carbide particles are at least 99.99999% pure. 8. The article of claim 1, 2, 5, or 7, wherein the article is selected from the group consisting of armor, ballistic materials, blast shields, penetration resistant materials, windows, lenses, fibers, internal reflection optical articles, total internal reflection optical articles, optical articles, brake rotors, brake assemblies, brake disks, brake pads, gemstones, semiprecious stones, and jewelry. 9. The article of claim 1, 2, 5, or 7, having a layer of material, the layer comprising the self sintered polysilocarb derived silicon carbide composition.
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