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Superhydrophobic compositions and coating process for the internal surface of tubular structures 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C09D-183/04
  • F16L-058/10
  • E21B-017/00
  • B05D-007/22
  • C23C-016/40
  • C23C-016/507
  • B05D-001/00
  • C23C-016/04
  • H01J-037/32
  • B05D-005/08
출원번호 US-0644236 (2017-07-07)
등록번호 US-9926467 (2018-03-27)
발명자 / 주소
  • Miller, Michael A.
  • Wei, Ronghua
  • Hatton, Gregory J.
출원인 / 주소
  • SOUTHWEST RESEARCH INSTITUTE
대리인 / 주소
    Grossman, Tucker et al.
인용정보 피인용 횟수 : 0  인용 특허 : 34

초록

A method for depositing a coating includes creating a vacuum within an interior volume of a tubular structure, wherein the tubular structure also includes an internal surface. Gas is supplied to the interior volume of the tubular structure, wherein the gas includes a plasma precursor in the gas phas

대표청구항

1. A system for forming a conformal coating on a tubular structure, comprising: a tubular structure including an internal surface defining an interior volume and at least two opposing ends, wherein each opposing end includes an opening;at least two vacuum pumping stations, wherein each vacuum pumpin

이 특허에 인용된 특허 (34)

  1. Dearnaley Geoffrey ; Lankford ; Jr. James ; Arps James H., Application of diamond-like carbon coatings to cutting surfaces of metal cutting tools.
  2. Zega Bogdan (Geneva CHX), Cathodic sputtering target including means for detecting target piercing.
  3. Maydan, Dan; Thakur, Randir P. S.; Collins, Kenneth S.; Al-Bayati, Amir; Hanawa, Hiroji; Ramaswamy, Kartik; Gallo, Biagio; Nguyen, Andrew, Fabrication of silicon-on-insulator structure using plasma immersion ion implantation.
  4. Nastasi, Michael A.; Walter, Kevin C.; Rej, Donald J., Forming adherent coatings using plasma processing.
  5. Yamasaki George K. (Horseheads NY), Hollow cathode discharge device with front shield.
  6. Henshaw William F. (Street MD) White John R. (Darlington MD) Niiler Andrus (Bel Air MD), Hollow cathode discharge source of metal vapor.
  7. Okagaki Hiroshi (Mito JPX) Kameya Takayuki (Ohmiya JPX) Ishizaki Hiroshi (Urawa JPX) Abe Kazuya (Sashima JPX), Hollow cathode discharge tube.
  8. Muller Rolf H. (Berkeley CA) Zhang Shengtao (Berkeley CA), Ion implantation of highly corrosive electrolyte battery components.
  9. Geoffrey Dearnaley ; Mark Van Dyke, Lubricious diamond-like carbon coatings.
  10. Wei, Ronghua, Magnetron sputtering apparatus and method for depositing a coating using same.
  11. Dearnaley Geoffrey ; Lankford ; Jr. James, Medical implants made of metal alloys bearing cohesive diamond like carbon coatings.
  12. Xu Zhong (Columbia SC), Method and apparatus for introducing normally solid material into substrate surfaces.
  13. Xu Zhong (Columbia SC), Method and apparatus for introducing normally solid materials into substrate surfaces.
  14. Conrad John R. (Madison WI), Method and apparatus for plasma source ion implantation.
  15. Barankova, Hana; Bardos, Ladislav, Method and apparatus for plasma treatment of gas.
  16. Wei, Ronghua, Method and apparatus of plasma-enhanced coaxial magnetron for sputter-coating interior surfaces.
  17. Boardman,William John; Tudhope,Andrew William; Mercado,Raul Donate, Method and system for coating internal surfaces of prefabricated process piping in the field.
  18. Wei,Ronghua; Rincon,Christopher; Arps,James, Method for depositing coatings on the interior surfaces of tubular structures.
  19. Wei, Ronghua; Rincon, Christopher; Arps, James, Method for depositing coatings on the interior surfaces of tubular walls.
  20. Chiang, Kuang-Tsan Kenneth; Wei, Ronghua; Langa, Edward, Method for magnetron sputter deposition.
  21. Dearnaley, Geoffrey; Van Dyke, Mark, Method for producing a lubricious amorphous carbon film.
  22. Veerasamy, Vijayen S.; Thomsen, Scott V., Method of depositing DLC on substrate.
  23. Sagoi Masayuki (Yokohama JPX) Nishikawa Reiji (Yokohama JPX), Method of manufacturing perpendicular magnetic recording floppy disk.
  24. Hershcovitch, Ady; Prelec, Krsto, Negative ion source with hollow cathode discharge plasma.
  25. Murata Masayoshi (Nagasaki JPX) Takeuchi Yoshiaki (Nagasaki JPX), Plasma CVD apparatus including rotating magnetic field generation means.
  26. Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Nguyen,Andrew; Al Bayati,Amir; Gallo,Biagio, Plasma immersion ion implantation process.
  27. Sheng, Terry Tienyu, Plasma immersion ion implantation process.
  28. Wei, Ronghua; Rincon, Christopher; Arps, James H., Plasma immersion ion processing for coating of hollow substrates.
  29. Murzin Ivan Herman ; Zhang Yanwei, Plasma immersion ion processor for fabricating semiconductor integrated circuits.
  30. Yokogawa, Ken'etsu; Momonoi, Yoshinori; Negishi, Nobuyuki; Izawa, Masaru; Tachi, Shinichi, Plasma processing system and method for manufacturing a semiconductor device by using the same.
  31. Malaczynski Gerard W. (Bloomfield Hills MI) Qiu Xiaohong (Sterling Heights MI) Mantese Joseph V. (Troy MI) Elmoursi Alaa A. (Troy MI) Hamdi Aboud H. (Warren MI) Wood Blake P. (Los Alamos NM) Walter K, Process for the formation of wear- and scuff-resistant carbon coatings.
  32. Chu Paul K.,HKX ; Chan Chung, Removable liner design for plasma immersion ion implantation.
  33. Dearnaley Geoffrey (San Antonio TX) Lankford ; Jr. James (San Antonio TX), Treatments to reduce thrombogeneticity in heart valves made from titanium and its alloys.
  34. David A. Glocker ; Mark M. Romach, Unbalanced plasma generating apparatus having cylindrical symmetry.
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