Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the di
Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.
대표청구항▼
1. A method of forming a memory cell, the method comprising: forming an interfacial material of an adhesion-promoter compound comprising adherent atoms and at least one ligand bonded to the adherent atoms on a cell material;removing the at least one ligand to form a discontinuous interfacial materia
1. A method of forming a memory cell, the method comprising: forming an interfacial material of an adhesion-promoter compound comprising adherent atoms and at least one ligand bonded to the adherent atoms on a cell material;removing the at least one ligand to form a discontinuous interfacial material consisting of the adherent atoms on the cell material, each adherent atom separated from an adjacent adherent atom by a distance greater than or equal to a width of the at least one ligand; andforming a metal ion-source material comprising a copper-containing material or a silver-containing material over the discontinuous interfacial material consisting of the adherent atoms, the discontinuous interfacial material adhering the cell material to the metal ion-source material by the adherent atoms. 2. The method of claim 1, wherein removing the at least one ligand comprises exposing the adhesion-promoter compound to a reagent. 3. The method of claim 2, wherein exposing the adhesion-promoter compound to a reagent comprises reacting the reagent with the at least one ligand to disassociate the at least one ligand from the adherent atoms. 4. The method of claim 2, wherein exposing the adhesion-promoter compound to a reagent comprises exposing the adhesion-promoter compound to ammonia. 5. The method of claim 1, wherein removing the at least one ligand comprises forming the discontinuous interfacial material having a thickness of one adherent atom. 6. The method of claim 1, wherein forming an interfacial material of an adhesion-promoter compound comprising adherent atoms and at least one ligand bonded to the adherent atoms comprises forming an interfacial material of an adhesion-promoter compound comprising metal atoms bonded to at least one halide atom. 7. The method of claim 1, wherein forming an interfacial material of an adhesion-promoter compound comprises forming the interfacial material using atomic layer deposition. 8. The method of claim 1, wherein forming an interfacial material of an adhesion-promoter compound comprising adherent atoms and at least one ligand bonded to the adherent atoms on a cell material comprises forming the interfacial material on the cell material comprising a transition metal oxide, a silicate, an oxynitride, a high-k dielectric material, or combinations thereof. 9. A method of forming a memory cell, the method comprising: forming a partial monolayer comprising an adhesion-promoter compound on a surface of a cell material subjected to a vacuum condition, the partial monolayer occupying less than all reaction surface sites of the cell material;forming a saturated film of metal ion-source atoms on the partial monolayer comprising the adhesion-promoter compound; andreleasing the vacuum condition. 10. The method of claim 9, wherein forming a partial monolayer comprises reacting a gas comprising the adhesion-promoter compound with the reaction surface sites to occupy less than about 60% of all the reaction surface sites of the cell material. 11. The method of claim 9, wherein forming a partial monolayer and forming a saturated film of metal ion-source atoms comprises forming the partial monolayer and forming the saturated film of metal ion-source atoms by atomic layer deposition without releasing the vacuum condition. 12. The method of claim 9, wherein forming a partial monolayer and forming a saturated film of metal ion-source atoms comprises moving a substrate comprising the cell material between multiple chambers of a tool without releasing the vacuum condition. 13. The method of claim 9, wherein forming a saturated film of metal ion-source atoms comprises reacting a gas comprising the metal ion-source atoms with reactive sites of the partial monolayer. 14. The method of claim 13, wherein forming a saturated film of metal ion-source atoms comprises bonding a metal ion-source atom with each reactive site of the partial monolayer. 15. A memory cell comprising: a cell material;a partial monolayer of adherent atoms, the adherent atoms occupying less than all reaction sites of the cell material; anda saturated film of metal ion-source atoms over the partial monolayer of adherent atoms, the adherent atoms spaced apart a distance sufficient to enable the metal ion-source atoms to drift through the partial monolayer. 16. The memory cell of claim 15, wherein the partial monolayer of adherent atoms comprises evenly spaced adherent atoms. 17. The memory cell of claim 15, wherein the cell material comprises a dielectric material. 18. The memory cell of claim 15, wherein the cell material is permeable to the metal ion-source atoms. 19. A method of forming a memory cell, the method comprising: forming an adhesion-promoter compound on a cell material, the adhesion-promoter compound comprising adherent atoms bonded to the cell material and at least one ligand bonded to the adherent atoms;removing the at least one ligand from the adhesion-promoter compound so that only the adherent atoms are bonded to the cell material, each adherent atom separated from an adjacent adherent atom by a distance greater than or equal to a width of the at least one ligand; andforming a metal ion-source material comprising ion-source atoms over the adherent atoms to form a discontinuous interfacial material. 20. The method of claim 19, wherein forming a metal ion-source material comprising ion-source atoms over the adherent atoms comprises bonding the adherent atoms and the ion-source atoms. 21. The method of claim 19, wherein forming a metal ion-source material comprising ion-source atoms over the adherent atoms comprises forming the metal ion-source material comprising metal ions. 22. The method of claim 19, wherein forming a metal ion-source material comprising ion-source atoms over the adherent atoms to form a discontinuous interfacial material comprises forming interfacial complexes comprising the adherent atoms and the ion-source atoms, the interfacial complexes spaced apart from one another. 23. The method of claim 19, wherein forming a metal ion-source material comprising ion-source atoms over the adherent atoms to form a discontinuous interfacial material comprises forming the discontinuous interfacial material consisting of a reaction product of the adherent atoms and the ion-source atoms.
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