[특허]Semiconductor device having subthreshold operating circuits including a back body bias potential based on temperature range

Semiconductor device having subthreshold operating circuits including a back body bias potential based on temperature range 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	G01K-007/16 G11C-007/00 G01K-007/00 G01K-013/00 H03K-003/012 H03K-017/14 H03K-017/687 G11C-007/04 G11C-011/406 H03K-017/22 H03K-021/10 G11C-011/4074 G11C-011/4093 G11C-011/4096 G11C-011/407 G01K-007/01 G01K-003/00
출원번호	US-0265668 (2014-04-30)
등록번호	US-9939330 (2018-04-10)
발명자 / 주소	Walker, Darryl G.
출원인 / 주소	Walker, Darryl G.
인용정보	피인용 횟수 : 0 인용 특허 : 92

초록 ▼

A semiconductor device that may include at least one temperature sensing circuit is disclosed. The temperature sensing circuits may be used to control various operating parameters to improve the operation of the semiconductor device over a wide temperature range. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at other operating temperatures. The temperature sensing circuit may provide a plurality of temperature ranges for setting the operational parameters. Each temperature range can include a temperature range upper limit value and a temperature range lower limit value and adjacent temperature ranges may overlap. The temperature ranges may be set in accordance with a count value that can incrementally change in response to the at least one temperature sensing circuit.

대표청구항 ▼

1. A device that operates over a plurality of predetermined temperature ranges, comprising: at least one subthreshold operating circuit including at least one first insulated gate field effect device (IGFET) having a first conductivity type;wherein the at least one first IGFET having the first conductivity type is coupled to receive a first back body bias potential that changes according to the temperature range in which the device is operating; whereinthe at least one subthreshold operating circuit operates at a power supply potential below threshold voltages of transistors included in the at least one subthreshold operating circuit. 2. The device of claim 1, further including: a first back bias voltage generating circuit coupled to receive at least one of a plurality of performance parameters and provide the first back body bias potential. 3. The device of claim 2, wherein: the at least one subthreshold operating circuit further includes at least one second IGFET having a second conductivity type; andthe at least one second IGFET having the second conductivity type is coupled to receive a second back body bias potential that changes according to the temperature range in which the device is operating. 4. The device of claim 3, further including: a second back bias voltage generating circuit coupled to receive at least one of the plurality of performance parameters and provide the second back body bias potential. 5. The device of claim 4, wherein: the at least one subthreshold operating circuit is coupled to receive a first power supply potential that changes according to the temperature range in which the device is operating. 6. The device of claim 5, further including: a first power supply generating circuit coupled to receive at least one of the plurality of performance parameters and provide the first power supply potential. 7. The device, of claim 1, further including: at least one above subthreshold operating circuit including at least one third IGFET having the first conductivity type;wherein the at least one third IGFET having the first conductivity type is coupled to receive a third back body bias potential that changes according to the temperature range in which the device is operating; whereinthe at least one above subthreshold operating circuit operates at a power supply potential above threshold voltages of transistors included in the at least one above subthreshold operating circuit. 8. The device of claim 7, wherein: a third back bias voltage generating circuit coupled to receive at least one of the plurality of performance parameters and provide the third back body bias potential. 9. The device of claim 8, further including: the at least one above subthreshold operating circuit including at least one fourth IGFET having the second conductivity type;wherein the at least one fourth IGFET having the second conductivity type is coupled to receive a fourth back body bias potential that changes according to the temperature range in which the device is operating. 10. The device of claim 9, further including: a fourth back bias voltage generating circuit coupled to receive at least one of the plurality of performance parameters and provide the fourth back body bias potential. 11. The device of claim 10, further including: the at least one above subthreshold operating circuit is coupled to receive a second power supply potential that changes according to the temperature range in which the device is operating. 12. The device, of claim 11, further including: a second power supply generating circuit coupled to receive at least one of the plurality of performance parameters and provide the second power supply potential. 13. The device of claim 1, wherein the device is a semiconductor device. 14. A device, comprising: at least one subthreshold operating circuit including at least one first insulated gate field effect device (IGFET) having a first conductivity type whereinthe at least one first IGFET is coupled to receive a first back body bias potential having a first potential when the device is operating within a first temperature range and a second potential when the device is operating within a second temperature range; whereinthe at least one subthreshold operating circuit operates at a power supply potential below threshold voltages of transistors included in the at least one subthreshold operating circuit. 15. The device of claim 14, further including: a first back bias voltage generating circuit coupled to receive at least one of a plurality of performance parameters and provide the first back body bias potential. 16. The device of claim 14, wherein: the at least one subthreshold operating circuit further includes at least one second IGFET having a second conductivity type; andthe at least one second IGFET having the second conductivity type is coupled to receive a second back body bias potential having a third potential when the device is operating within the first temperature range and a fourth potential when the device is operating within the second temperature range. 17. The device of claim 14, further including: a temperature circuit coupled to receive a value that sets the first temperature range and the second temperature range. 18. The device of claim 17, further including: the value is a count value; anda counter circuit coupled to provide the count value. 19. The device of claim 18, further including: a performance parameter table coupled to receive the count value and provide a plurality of performance parameters; anda first back bias voltage generating circuit coupled to receive at least one of the plurality of performance parameters and provide the first back body bias potential. 20. The device of claim 14, wherein: the device is a semiconductor device.

이 특허에 인용된 특허 (92)

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Walker, Darryl G., Semiconductor device having variable parameter selection based on temperature and test method.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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연합인증

Semiconductor device having subthreshold operating circuits including a back body bias potential based on temperature range 원문보기

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Semiconductor device having subthreshold operating circuits including a back body bias potential based on temperature range 원문보기

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연구과제 타임라인

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