The Research Foundation for The State University of New York
대리인 / 주소
The Farrell Law Firm, P.C.
인용정보
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2
초록▼
Provided is a detector that includes a scintillator, a common electrode, a pixel electrode, and a plurality of insulating layers, with a plurality of nano-pillars formed in the plurality of insulating layers, a nano-scale well structure between adjacent nano-pillars, with a-Se separating the adjacen
Provided is a detector that includes a scintillator, a common electrode, a pixel electrode, and a plurality of insulating layers, with a plurality of nano-pillars formed in the plurality of insulating layers, a nano-scale well structure between adjacent nano-pillars, with a-Se separating the adjacent nano-pillars, and a method for operation thereof.
대표청구항▼
1. A detector comprising: a plurality of electrodes; anda plurality of insulating layers, with a plurality of nano-pillars formed therein,wherein amorphous selenium (a-Se) separates adjacent nano-pillars. 2. The detector of claim 1, wherein the a-Se fills a nanoscale well structure between adjacent
1. A detector comprising: a plurality of electrodes; anda plurality of insulating layers, with a plurality of nano-pillars formed therein,wherein amorphous selenium (a-Se) separates adjacent nano-pillars. 2. The detector of claim 1, wherein the a-Se fills a nanoscale well structure between adjacent nano-pillars. 3. The detector of claim 2, wherein an avalanche transport region separates the nano-pillars from a common electrode of the plurality of electrodes. 4. The detector of claim 2, further comprising an electron blocking layer separating the nano-pillars and the nanoscale well structure from the a-Se. 5. The detector of claim 4, wherein the electron blocking layer defines a detection region. 6. The detector of claim 1, further comprising a scintillator. 7. The detector of claim 6, wherein the scintillator is adjacent to a common electrode, opposite the plurality of insulating layers. 8. The detector of claim 1, further comprising a nano-electric Frisch grid embedded within each nano-pillar of the plurality of nano-pillars. 9. The detector of claim 1, further comprising a hole blocking layer between a common electrode and the a-Se. 10. A detection method comprising: detecting movement of holes in a detection region of a detector that includes a plurality of electrodes, a plurality of insulating layers, and a substrate,wherein a plurality of nano-pillars are formed in the plurality of insulating layers. 11. The method of claim 10, wherein a nanoscale well structure is formed between nano-pillars. 12. The method of claim 10, wherein amorphous selenium (a-Se) separates adjacent nano-pillars. 13. The method of claim 10, wherein an avalanche transport region separates at least two nano-pillars of the plurality of nano-pillars from a common electrode of the plurality of electrodes. 14. The method of claim 13, wherein an electron blocking layer separates the at least two nano-pillars and a nanoscale well structure from amorphous selenium (a-Se). 15. The method of claim 14, wherein the electron blocking layer defines the detection region. 16. The method of claim 15, wherein avalanche gain occurs above the electron blocking layer, outside of the detection region. 17. The method of claim 10, wherein a nano-electric grid is embedded within each nano-pillar of the plurality of nano-pillars. 18. The method of claim 17, wherein the nano-electric grid forms a Frisch grid. 19. The method of claim 17, wherein the nano-electric grid is configured to mask detection of electrons within the detection region. 20. A method of manufacture of a detector that comprises at least two electrodes and a plurality of insulating layers, the method comprising: forming a nanoscale well structure between adjacent nano-pillars of a plurality of nano-pillars in the plurality of insulating layers, andinjecting amorphous selenium (a-Se) between the adjacent nano-pillars.
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이 특허에 인용된 특허 (2)
Elabd Hammam, Broadband multicolor photon counter for low light detection and imaging.
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