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A method for estimating a temperature of a substrate includes generating plasma in a plasma processing system. The substrate is arranged on a substrate support structure in the plasma processing system. The plasma generates electromagnetic radiation that is incident upon a first surface of the subst

A method for estimating a temperature of a substrate includes generating plasma in a plasma processing system. The substrate is arranged on a substrate support structure in the plasma processing system. The plasma generates electromagnetic radiation that is incident upon a first surface of the substrate. The method further includes arranging a detector adjacent to a second surface of the substrate and in-situ the plasma processing system and measuring a signal intensity of electromagnetic radiation passing through the second surface of the substrate at N frequencies. The method includes selecting each of the N frequencies at which the signal intensity is measured by the detector to correspond to a phonon-generating frequency of a material in the substrate. The method includes converting the signal intensity at the N frequencies to N absorbance values and estimating a temperature of the substrate based on the N absorbance values.

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1. A method for estimating a temperature of a substrate, comprising: generating plasma in a plasma processing system,wherein the substrate is arranged on a substrate support structure in the plasma processing system, andwherein the plasma generates electromagnetic radiation that is incident upon a f

1. A method for estimating a temperature of a substrate, comprising: generating plasma in a plasma processing system,wherein the substrate is arranged on a substrate support structure in the plasma processing system, andwherein the plasma generates electromagnetic radiation that is incident upon a first surface of the substrate;arranging a detector adjacent to a second surface of the substrate and in-situ the plasma processing system,selecting each of N frequencies at which to measure a signal intensity of electromagnetic radiation passing through the second surface of the substrate using the detector, wherein each of the selected N frequencies corresponds to a phonon-generating frequency of a material in the substrate, and wherein each of the N frequencies is selected, based on known absorbance characteristics of the material in the substrate, to correspond to a respective predetermined frequency at which said substrate has a desired absorption coefficient in the presence of plasma;measuring the signal intensity at the selected N frequencies while the plasma is present in the plasma processing system, wherein N is greater than or equal to one;converting the signal intensity of the electromagnetic radiation as measured at the N frequencies to N absorbance values of the material in the substrate; andestimating a temperature of the substrate based on the N absorbance values. 2. The method of claim 1, further comprising varying at least one of: an operating parameter of a chiller for cooling the substrate based on the estimated temperature of the substrate; anda gas pressure of helium supplied between the substrate and the substrate support structure based on the estimated temperature of the substrate. 3. The method of claim 2, further comprising varying both the operating parameter of the chiller and the gas pressure of the helium supplied between the substrate and the substrate support structure based on the estimated temperature of the substrate. 4. The method of claim 1, wherein the detector comprises a multilayer dielectric interference filter. 5. The method of claim 1, wherein the detector comprises a prism. 6. The method of claim 1, further comprising generating the estimated temperature of the substrate based on Planck's radiation law for blackbody radiation. 7. The method of claim 1, wherein the detector comprises a photoconductive device. 8. The method of claim 1, wherein the detector comprises a photovoltaic detector. 9. The method of claim 1, wherein the detector includes an optical dispersing element. 10. The method of claim 9, wherein the optical dispersing element comprises a grating. 11. The method of claim 9, wherein the optical dispersing element comprises a Fabry-Perot interferometer. 12. The method of claim 1, wherein the substrate is a silicon wafer. 13. The method of claim 1, wherein the substrate is a glass panel. 14. The method of claim 1, wherein the N frequencies are selected in a range from 6 μm to 50 μm. 15. A method for estimating a temperature of a substrate, comprising: generating plasma in a plasma processing system,wherein the substrate is arranged on a substrate support structure in the plasma processing system, andwherein the plasma generates electromagnetic radiation that is incident upon a first surface of the substrate;arranging a detector adjacent to a second surface of the substrate and in-situ the plasma processing system,selecting each of N frequencies at which to measure a signal intensity of electromagnetic radiation passing through the second surface of the substrate using the detector, wherein each of the selected N frequencies corresponds to a phonon-generating frequency of a material in the substrate, wherein the N frequencies are selected in a range from 6 μm to 50 μm, and wherein each of the N frequencies is selected, based on known absorbance characteristics of the material in the substrate, to correspond to a respective predetermined frequency at which said substrate has a desired absorption coefficient in the presence of plasma;measuring the signal intensity at the N frequencies while the plasma is present in the plasma processing system, wherein N is greater than or equal to one;converting the signal intensity of the electromagnetic radiation as measured at the N frequencies to N absorbance values of the material in the substrate;estimating a temperature of the substrate based on the N absorbance values; andvarying at least one of: an operating parameter of a chiller for cooling the substrate based on the estimated temperature of the substrate; anda gas pressure of helium supplied between the substrate and the substrate support structure based on the estimated temperature of the substrate.