Three-dimensional photovoltaic devices including cavity-containing cores and methods of manufacture
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-031/0352
H01L-031/18
H01L-031/0236
H01L-031/0392
H01L-031/068
H01L-031/075
H01L-031/056
H02S-020/23
H01L-031/054
출원번호
US-0872580
(2015-10-01)
등록번호
US-9954126
(2018-04-24)
발명자
/ 주소
Smith, Robert
Bawden, Larry
Bohland, John
출원인 / 주소
Q1 NANOSYSTEMS CORPORATION
대리인 / 주소
The Marbury Law Group, PLLC
인용정보
피인용 횟수 :
0인용 특허 :
52
초록▼
Various stamping methods may reduce defects and increase throughput for manufacturing metamaterial devices. Metamaterial devices with an array of photovoltaic bristles, and/or vias, may enable each photovoltaic bristle to have a high probability of photon absorption. The high probability of photon a
Various stamping methods may reduce defects and increase throughput for manufacturing metamaterial devices. Metamaterial devices with an array of photovoltaic bristles, and/or vias, may enable each photovoltaic bristle to have a high probability of photon absorption. The high probability of photon absorption may lead to increased efficiency and more power generation from an array of photovoltaic bristles. Reduced defects in the metamaterial device may decrease manufacturing cost, increase reliability of the metamaterial device, and increase the probability of photon absorption for a metamaterial device. The increase in manufacturing throughput and reduced defects may reduce manufacturing costs to enable the embodiment metamaterial devices to reach grid parity.
대표청구항▼
1. A method of forming a photovoltaic structure, comprising: forming a pattern of trenches extending downward from a top surface of an optically transparent layer; andsequentially depositing a transparent conductive material layer, a photovoltaic material layer, and a core conductive material layer
1. A method of forming a photovoltaic structure, comprising: forming a pattern of trenches extending downward from a top surface of an optically transparent layer; andsequentially depositing a transparent conductive material layer, a photovoltaic material layer, and a core conductive material layer within the pattern of trenches in the moldable material layer, wherein a via cavity laterally bound by a surface of the core conductive material layer is formed within, or above, each trench. 2. The method of claim 1, further comprising disposing a passivation substrate having a planar bottom surface directly on a physically exposed planar surface of the core conductive material layer, wherein a plurality of via cavities is laterally surrounded by the core conductive material layer and is vertically bounded by the passivation substrate. 3. The method of claim 2, wherein each of the plurality of via cavities is a three-dimensional closed shape defined by a portion of the planar bottom surface of the passivation substrate and a non-planar portion of a contiguous surface of the core conductive material layer. 4. The method of claim 3, wherein the three-dimensional closed shape has a variable horizontal cross-sectional area that decreases strictly with a vertical distance from the planar bottom surface of the passivation substrate. 5. The method of claim 3, wherein a seam of the core conductive material layer extends vertically from an apex of each of the plurality of via cavities. 6. The method of claim 2, wherein the plurality of via cavities is filled with a gas or is in vacuum upon disposition of the passivation substrate. 7. The method of claim 1, wherein the optically transparent layer is formed by: providing a moldable material layer on, or in, a substrate; andimprinting a die including a pattern of protruding structures and incorporated into a web onto the moldable material layer, wherein the patterned moldable material layer is the optically transparent layer including the pattern of trenches. 8. The method of claim 7, wherein the moldable material layer is selected from a material selected from a lacquer, a plastic material, a resin material, a silicone precursor material, a gel derived from a sol, and a glass transition material. 9. The method of claim 7, wherein the moldable material layer is selected from phenylalkyl catechol-based lacquers, nitrocellulose lacquers, acrylic lacquers, and water-based lacquers. 10. The method of claim 7, wherein the moldable material layer comprises silicone. 11. The method of claim 7, further comprising: applying a sol onto the substrate; andinducing transition of the sol into a gel to form the moldable material layer, wherein the moldable material layer is selected from a gel of silicon oxide and a gel of dielectric metal oxide. 12. The method of claim 7, wherein the moldable material layer comprises a glass transition material selected from terephthalate (PET), polypropylene (PP), polyethylene (PE), nylon, polyoxymethylene (POM), polybutylene terephthalate (PBT), polytetrafluoroethylene (PTFE), polyvinylidene fluoride (PVFD), polyethylenechlorotrifluoroethylene (PECTFE), polyethylene tetrafluoroethylene (PETFE), polycarbonate (PC), polymethylmethacrylate (PMMA), polymethacrylate (PMA), cyclic polyolefin, methylmethylacrylic acid, hydroxyethylmethylmethacrylate, fluorofunctinoalized methylmethacrylate, silicone-functionalized methylmethacrylate, soda-lime-silica glass, borophosphosilicate glass, and phosphosilicate glass. 13. The method of claim 7, wherein: the substrate is a transparent substrate; andthe moldable material layer formed on the transparent substrate, and the bottommost portions of the trenches are formed above the interface between the transparent substrate and the moldable material layer. 14. The method of claim 7, wherein the substrate consists of the moldable material layer.
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