[특허]Temperature sensor circuit and semiconductor device including temperature sensor circuit

Temperature sensor circuit and semiconductor device including temperature sensor circuit 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	G01K-007/01
출원번호	US-0232120 (2016-08-09)
등록번호	US-10001414 (2018-06-19)
우선권정보	JP-2012-105460 (2012-05-02)
발명자 / 주소	Koyama, Jun Yamazaki, Shunpei
출원인 / 주소	Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소	Robinson Intellectual Property Law Office
인용정보	피인용 횟수 : 0 인용 특허 : 44

초록 ▼

To provide a highly accurate temperature sensor circuit. The temperature sensor circuit includes a first constant current circuit; a first diode in which a first voltage reflecting the temperature of an object to be detected is generated between an anode and a cathode in accordance with a first current supplied from the first constant current circuit; a second constant current circuit; a second diode which includes an oxide semiconductor and in which a second voltage is generated between an anode and a cathode in accordance with a second current supplied from the second constant current circuit; and an amplifier circuit which amplifies a difference between the first voltage and the second voltage.

대표청구항 ▼

1. A temperature sensor circuit comprising: a first constant voltage circuit;a first semiconductor element where a first current flows between a pair of terminals in accordance with a first voltage applied from the first constant voltage circuit;a first load where a second voltage is generated between terminals by supply of the first current;a second constant voltage circuit;a second semiconductor element where a second current flows between a pair of terminals in accordance with a third voltage applied from the second constant voltage circuit;a second load where a fourth voltage is generated between terminals by supply of the second current; andan amplifier circuit which amplifies a difference between the second voltage and the fourth voltage,wherein a rate of change in the first current with a first temperature of the first semiconductor element is greater than a rate of change in the second current with a second temperature of the second semiconductor element,wherein a value of the first temperature is same as a value of the second temperature,wherein the second semiconductor element comprises an oxide semiconductor layer in a second channel formation region, andwherein the first semiconductor element comprises a semiconductor layer other than an oxide semiconductor layer in a first channel formation region. 2. The temperature sensor circuit according to claim 1, wherein the oxide semiconductor comprises In, Ga, and Zn. 3. The temperature sensor circuit according to claim 1, wherein at least one of the first semiconductor element and the second semiconductor element is a diode. 4. The temperature sensor circuit according to claim 1, wherein a value of the third voltage is equal to or substantially equal to a value of the fourth voltage. 5. A semiconductor device comprising: the temperature sensor circuit according to claim 1;an output device; anda signal processing circuit which controls operation of the output device using a signal. 6. A semiconductor device comprising: a temperature sensor circuit which generates a signal;an output device; anda signal processing circuit which controls operation of the output device using the signal,wherein the temperature sensor circuit comprises: a first constant voltage circuit;a first semiconductor element where a first current flows between a pair of terminals in accordance with a first voltage applied from the first constant voltage circuit;a first load where a second voltage is generated between terminals by supply of the first current;a second constant voltage circuit;a second semiconductor element where a second current flows between a pair of terminals in accordance with a third voltage applied from the second constant voltage circuit;a second load where a fourth voltage is generated between terminals by supply of the second current; andan amplifier circuit which amplifies a difference between the second voltage and the fourth voltage, andwherein a rate of change in the first current with a first temperature of the first semiconductor element is greater than a rate of change in the second current with a second temperature of the second semiconductor element,wherein a value of the first temperature is same as a value of the second temperature,wherein the second semiconductor element comprises an oxide semiconductor layer in a second channel formation region, andwherein the first semiconductor element comprises a semiconductor layer other than an oxide semiconductor layer in a first channel formation region. 7. The semiconductor device according to claim 6, wherein the output device is a liquid crystal display device. 8. The semiconductor device according to claim 7, wherein each pixel of the liquid crystal display device includes a liquid crystal element, and wherein the temperature depends on a temperature of a liquid crystal layer included in the liquid crystal element. 9. The semiconductor device according to claim 8, wherein the signal processing circuit is configured to adjust a voltage applied to the liquid crystal element using the signal to control operation of the output device. 10. The semiconductor device according to claim 6, wherein the oxide semiconductor comprises In, Ga, and Zn. 11. The semiconductor device according to claim 6, wherein at least one of the first semiconductor element and the second semiconductor element is a diode. 12. A semiconductor device comprising: a temperature sensor circuit which generates a signal;an output device; anda signal processing circuit which controls operation of the output device using the signal,wherein the temperature sensor circuit comprises: a first constant voltage circuit;a first semiconductor element where a first current flows between a pair of terminals in accordance with a first voltage applied from the first constant voltage circuit;a first load where a second voltage is generated between terminals by supply of the first current;a second constant voltage circuit;a second semiconductor element where a second current flows between a pair of terminals in accordance with a third voltage applied from the second constant voltage circuit;a second load where a fourth voltage is generated between terminals by supply of the second current; andan amplifier circuit which amplifies a difference between the second voltage and the fourth voltage,wherein a rate of change in the first current of the first semiconductor element is greater than a rate of change in the second current of the second semiconductor element,wherein the second semiconductor element comprises an oxide semiconductor layer in a second channel formation region, andwherein the first semiconductor element comprises a semiconductor layer other than an oxide semiconductor layer in a first channel formation region. 13. The semiconductor device according to claim 12, wherein the output device is a liquid crystal display device. 14. The semiconductor device according to claim 12, wherein the signal processing circuit is configured to adjust a voltage applied to a liquid crystal element using the signal to control operation of the output device. 15. The semiconductor device according to claim 12, wherein the oxide semiconductor comprises In, Ga, and Zn. 16. The semiconductor device according to claim 12, wherein at least one of the first semiconductor element and the second semiconductor element is a diode.

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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Temperature sensor circuit and semiconductor device including temperature sensor circuit 원문보기

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