초록 ▼

It is an object to carry out a chemical treatment for a peripheral edge part of a substrate while suppressing an amount of consumption of a processing liquid and a time required for processing. In order to achieve the object, a substrate processing device injects heating steam to a peripheral edge p

It is an object to carry out a chemical treatment for a peripheral edge part of a substrate while suppressing an amount of consumption of a processing liquid and a time required for processing. In order to achieve the object, a substrate processing device injects heating steam to a peripheral edge part of a substrate to heat the peripheral edge part when carrying out a chemical treatment for the peripheral edge part of the substrate while rotating the substrate in a substantially horizontal posture. Moreover, the substrate processing device injects a gas from above the substrate toward a predetermined injection target region defined within a range surrounded by a rotating track of the peripheral edge part of the substrate in an upper surface of the substrate, thereby generating, on the substrate, a gas flow which flows from the injection target region toward the peripheral edge part of the substrate.

대표청구항 ▼

1. A substrate processing device for carrying out a chemical treatment for a substrate by using a processing liquid having a chemical activity varied depending on a temperature, the device comprising: a substrate holding portion for holding a substrate in a substantially horizontal posture;a rotatin

1. A substrate processing device for carrying out a chemical treatment for a substrate by using a processing liquid having a chemical activity varied depending on a temperature, the device comprising: a substrate holding portion for holding a substrate in a substantially horizontal posture;a rotating portion for rotating said substrate held in said substrate holding portion in a substantially horizontal plane;a steam supply source;at least one steam injection nozzle connected to said steam supply source for injecting heating steam to a peripheral edge part of the surface of said substrate so as to partially apply said heating steam to said peripheral edge part thereby spatially exposing said peripheral edge part to a part of said heating steam to heat said peripheral edge part; anda peripheral edge processing portion positioned above said peripheral edge part heated by said heating steam for supplying a processing liquid for a chemical treatment from above to said peripheral edge part of the surface of said substrate heated by said heating steam, while said at least one steam injection nozzle is injecting said heating steam, thereby carrying out a chemical treatment for said peripheral edge part;wherein said at least one steam injection nozzle injects said heating steam from above toward a target region in a rotating track of said peripheral edge part of said substrate. 2. The substrate processing device according to claim 1, further comprising a gas injecting portion for injecting a gas from above said substrate toward a predetermined injection target region defined within a range surrounded by a rotating track of said peripheral edge part of said substrate in an upper surface of said substrate, while said peripheral edge processing portion is supplying said processing liquid, thereby generating, on the substrate, a gas flow which flows from said injection target region toward said peripheral edge part of said substrate, said gas being a nitrogen gas, a dry air or an inert gas,wherein said target region positioned more outward in a radial direction of said substrate than said injection target region for said gas. 3. The substrate processing device according to claim 1, wherein said at least one steam injection nozzle includes a plurality of steam injection nozzles disposed to be opposed to a plurality of different positions in a rotating track of a peripheral edge part of said substrate respectively, for injecting heating steam in parallel with each other to said peripheral edge part so as to partially apply said heating steam to said peripheral edge part thereby spatially exposing said peripheral edge part to a part of said heating steam, and heating said peripheral edge part in said plurality of positions. 4. The substrate processing device according to claim 3, wherein each of said plurality of steam injection nozzles supplies said heating steam in such a manner that said heating steam hits a corresponding region of a plurality of target regions defined on a plane including said substrate,a part of said corresponding region overlaps with said rotating track of said peripheral edge part, and another part of said corresponding region is outside of said substrate. 5. The substrate processing device according to claim 1, further comprising a lower surface processing portion for supplying a processing liquid to a lower surface of said substrate, thereby carrying out a chemical treatment for the lower surface,said lower surface processing portion including an opposed surface which is opposed to a substantially entire region of the lower surface of said substrate which is rotated by said rotating portion and a processing liquid discharging port formed on said opposed surface, and discharging the processing liquid from said processing liquid discharging port to bring a space between the lower surface of said substrate and said opposed surface to a fluid-tight condition with the processing liquid. 6. The substrate processing device according to claim 5, wherein said opposed surface takes a shape of a funnel in which said processing liquid discharging port portion has a greater interval from the lower surface of said substrate than a portion opposed to said peripheral edge part. 7. The substrate processing device according to claim 1, wherein said at least one steam injection nozzle and said peripheral edge processing portion are provided in a positional relationship in which said steam from said at least one steam injection nozzle is injected to said peripheral edge part in a first position of a rotating track of said peripheral edge part of said substrate, and said processing liquid from said peripheral edge processing portion is supplied to said peripheral edge part in a second position placed downstream from said first position in a direction of rotation of said substrate along said rotating track. 8. The substrate processing device according to claim 1, wherein said steam is superheated steam. 9. The substrate processing device of claim 1, wherein said heating steam is injected onto said peripheral edge part along an injection path in an obliquely downward direction from an inside of said substrate to an outside thereof. 10. The substrate processing device according to claim 9, further comprising a holding member for integrally holding said at least one steam injection nozzle and said peripheral edge processing portion. 11. A substrate processing device for carrying out a chemical treatment for a substrate by using a processing liquid having a chemical activity varied depending on a temperature, the device comprising: a substrate holding portion for holding a substrate in a substantially horizontal posture;a rotating portion for rotating said substrate held in said substrate holding portion in a substantially horizontal plane;a steam supply source;at least one steam injection nozzle connected to said steam supply source and positioned above a peripheral edge part of the surface of said substrate for injecting heating steam to said peripheral edge part of the surface of said substrate; anda peripheral edge processing portion positioned above said peripheral edge part for supplying a processing liquid for a chemical treatment from above to said peripheral edge part of the surface of said substrate heated by said heating steam, while said at least one steam injection nozzle is injecting said heating steam, thereby carrying out a chemical treatment for said peripheral edge part;wherein said at least one steam injection nozzle injects said heating steam from above toward a target region in a rotating track of said peripheral edge part of said substrate.