A highly reliable light-emitting device is provided. Damage to an element due to externally applied physical power is suppressed. Alternatively, in a process of pressure-bonding of an FPC, damage to a resin and a wiring which are in contact with a flexible substrate due to heat is suppressed. A neut
A highly reliable light-emitting device is provided. Damage to an element due to externally applied physical power is suppressed. Alternatively, in a process of pressure-bonding of an FPC, damage to a resin and a wiring which are in contact with a flexible substrate due to heat is suppressed. A neutral plane at which stress-strain is not generated when a flexible light-emitting device including an organic EL element is deformed, is positioned in the vicinity of a transistor and the organic EL element. Alternatively, the hardness of the outermost surface of a light-emitting device is high. Alternatively, a substrate having a coefficient of thermal expansion of 10 ppm/K or lower is used as a substrate that overlaps with a terminal portion connected to an FPC.
대표청구항▼
1. A light-emitting device comprising: a first flexible substrate comprising a first surface and a second surface opposite to the first surface;a transistor over the first surface;an insulating layer over the transistor;a light-emitting element over and in contact with an upper surface of the insula
1. A light-emitting device comprising: a first flexible substrate comprising a first surface and a second surface opposite to the first surface;a transistor over the first surface;an insulating layer over the transistor;a light-emitting element over and in contact with an upper surface of the insulating layer, wherein the light-emitting element is electrically connected to the transistor; anda second flexible substrate over the light-emitting element, the second flexible substrate comprising a third surface and a fourth surface opposite to the third surface,wherein the first surface and the third surface face each other, andwherein a first distance from the second surface to the upper surface of the insulating layer is 0.8 to 1.2 times as large as a second distance from the fourth surface to the upper surface of the insulating layer. 2. The light-emitting device according to claim 1, wherein the first distance is 0.9 to 1.1 times as large as the second distance. 3. The light-emitting device according to claim 1, wherein the insulating layer is a planarization layer. 4. The light-emitting device according to claim 3, wherein a portion of one of the transistor, the planarization layer, and the light-emitting element is positioned in a neutral plane. 5. The light-emitting device according to claim 1, further comprising a color filter between the light-emitting element and the second flexible substrate. 6. The light-emitting device according to claim 1, further comprising a color filter between the light-emitting element and the first flexible substrate. 7. The light-emitting device according to claim 1, wherein the light-emitting element comprises a layer containing a light-emitting organic compound between a first electrode and a second electrode over the first electrode, andwherein the first electrode is provided over and in contact with the insulating layer. 8. The light-emitting device according to claim 1, wherein the transistor comprises an oxide semiconductor layer. 9. The light-emitting device according to claim 1, further comprising an FPC affixed to the first flexible substrate. 10. An electronic device comprising the light-emitting device according to claim 9. 11. A light-emitting device comprising: a first flexible substrate comprising a first surface and a second surface opposite to the first surface;a driver circuit over the first flexible substrate;a pixel portion over the first surface, the pixel portion comprising: a transistor over the first surface;an insulating layer over the transistor;a light-emitting element over the transistor and in contact with an upper surface of the insulating layer, wherein the light-emitting element is electrically connected to the transistor; anda second flexible substrate comprising a third surface and a fourth surface opposite to the third surface,wherein the first surface and the third surface face each other with the pixel portion provided therebetween, andwherein a first distance from the second surface to the upper surface of the insulating layer is 0.8 to 1.2 times as large as a second distance from the fourth surface to the upper surface of the insulating layer. 12. The light-emitting device according to claim 11, wherein the first distance is 0.9 to 1.1 times as large as the second distance. 13. The light-emitting device according to claim 11, wherein the insulating layer is a planarization layer. 14. The light-emitting device according to claim 13, wherein a portion of one of the transistor, the planarization layer, and the light-emitting element is positioned in a neutral plane. 15. The light-emitting device according to claim 11, further comprising a color filter between the light-emitting element and the second flexible substrate. 16. The light-emitting device according to claim 11, further comprising a color filter between the light-emitting element and the first flexible substrate. 17. The light-emitting device according to claim 11, wherein the light-emitting element comprises a layer containing a light-emitting organic compound between a first electrode and a second electrode over the first electrode, and over and in contact with the insulating layer. 18. The light-emitting device according to claim 11, wherein the transistor comprises an oxide semiconductor layer. 19. The light-emitting device according to claim 11, further comprising an FPC affixed to the first flexible substrate. 20. An electronic device comprising the light-emitting device according to claim 19.
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