[특허]Semiconductor apparatus

FUJI ELECTRIC CO., LTD.

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특허 상세정보

MyON담기

내보내기 페이스북 공유 트위터 공유 카카오톡 공유

Semiconductor apparatus

특허상세정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01T-015/00 H01L-029/739 H01L-027/06
출원번호	US-0364259 (2016-11-30)
등록번호	US-10008835 (2018-06-26)
우선권정보	JP-2016-003866 (2016-01-12)
발명자 / 주소	Miyazawa, Shigemi
출원인 / 주소	FUJI ELECTRIC CO., LTD.
인용정보	피인용 횟수 : 0 인용 특허 : 15

초록
▼

A semiconductor apparatus including a power semiconductor element connected between a first terminal on a high potential side and a second terminal on a low potential side, and controlled to be ON or OFF according to a gate potential thereof; a switch element connected between a control terminal that inputs a control signal for controlling the power semiconductor element and a gate of the power semiconductor element, and controlled to be ON or OFF according to a gate potential thereof; an ON potential supplying section connected between the first terminal and a gate of the switch element, that supplies an ON potential to the gate of the switch element; and an OFF potential supplying section connected between a reference potential and the gate of the switch element, that sets the gate potential of the switch element to an OFF potential in response to a predetermined cutoff condition being satisfied.

대표
청구항
▼

1. A semiconductor apparatus comprising: a power semiconductor element that is connected between a first terminal on a high potential side and a second terminal on a low potential side, and is controlled to be ON or OFF according to a gate potential thereof;a switch element that is connected between a control terminal that inputs a control signal for controlling the power semiconductor element and a gate of the power semiconductor element, and is controlled to be ON or OFF according to a gate potential thereof;an ON potential supplying section that is connected between the first terminal and a gate of the switch element, and supplies an ON potential to the gate of the switch element;an OFF potential supplying section that is connected between a reference potential and the gate of the switch element, and sets the gate potential of the switch element to an OFF potential in response to a predetermined cutoff condition being satisfied;wherein the ON potential supplying section includes: a pullup circuit that includes a rectifying element connected between the first terminal and the gate of the switch element, and pulls up the gate of the switch element with a voltage from the first terminal; anda capacitor that is provided between the gate of the switch element and a reference potential or the control terminal. 2. The semiconductor apparatus according to claim 1, wherein the ON potential supplying section pulls up the gate of the switch element, andthe OFF potential supplying section connects the gate of the switch element to the reference potential, in response to the predetermined cutoff condition being satisfied. 3. The semiconductor apparatus according to claim 1, wherein the pullup circuit includes a resistor connected in series with the rectifying element, closer to the first terminal than the rectifying element, between the first terminal and the gate of the switch element. 4. The semiconductor apparatus according to claim 1, comprising: a discharge circuit that is connected between the gate of the power semiconductor element and the reference potential, and discharges a charge that has been accumulated in the gate of the power semiconductor element. 5. The semiconductor apparatus according to claim 1, wherein the power semiconductor element includes a collector terminal on the first terminal side provided on a first surface side of a substrate, a gate terminal provided on a second surface side of the substrate, and an emitter terminal on the second terminal side provided on the second surface side of the substrate,the second surface side of the substrate has n-type conductivity, andthe switch element is an n-channel MOSFET formed on the second surface side of the substrate. 6. The semiconductor apparatus according to claim 1, wherein the semiconductor apparatus is an ignitor that controls a current flowing through an ignition coil according to a control signal from outside. 7. A semiconductor apparatus comprising: a power semiconductor element that is connected between a first terminal on a high potential side and a second terminal on a low potential side, and is controlled to be ON or OFF according to a gate potential thereof;a switch element that is connected between a control terminal that inputs a control signal for controlling the power semiconductor element and a gate of the power semiconductor element, and is controlled to be ON or OFF according to a gate potential thereof;an ON potential supplying section that is connected between the first terminal and a gate of the switch element, and supplies an ON potential to the gate of the switch element;an OFF potential supplying section that is connected between a reference potential and the gate of the switch element, and sets the gate potential of the switch element to an OFF potential in response to a predetermined cutoff condition being satisfied;a cutoff condition detecting section that detects whether the predetermined cutoff condition has been satisfied; anda latch section that latches affirmative detection of the cutoff condition, whereinthe OFF potential supplying section sets the gate potential of the switch element to the OFF potential, in response to the latch section having latched the cutoff condition as being satisfied. 8. The semiconductor apparatus according to claim 7, wherein the latch section receives a power source supply from the first terminal and holds a latched value. 9. The semiconductor apparatus according to claim 8, wherein the latch section receives the power source supply from the control terminal and the first terminal, and holds the latched value. 10. A semiconductor apparatus comprising: a power semiconductor element that is connected between a first terminal on a high potential side and a second terminal on a low potential side, and is controlled to be ON or OFF according to a gate potential thereof;a cutoff condition detecting section that detects whether a predetermined cutoff condition has been satisfied;a latch section that latches affirmative detection of the cutoff condition; anda cutoff section for setting the gate potential of the power semiconductor element to an OFF potential, in response to the latch section having latched the affirmative detection of the cutoff condition, whereinthe latch section receives a power source supply from the first terminal and holds a latched value. 11. The semiconductor apparatus according to claim 10, wherein the latch section receives the power source supply from the first terminal and a control terminal that inputs a control signal for controlling the power semiconductor element. 12. The semiconductor apparatus according to claim 11, wherein the latch section receives the power source supply from the control terminal via a first rectifying element, and receives the power source supply from the first terminal via a second rectifying element. 13. The semiconductor apparatus according to claim 10, further comprising: a switch element that is connected between a control terminal that inputs a control signal for controlling the power semiconductor element and a gate of the power semiconductor element, and is controlled to be ON or OFF according to a gate potential thereof; andan ON potential supplying section that is connected between the first terminal and the gate of the switch element, and supplies an ON potential to the gate of the switch element, whereinthe cutoff section includes an OFF potential supplying section that is connected between a reference potential and the gate of the switch element, and sets the gate potential of the switch element to the OFF potential in response to a predetermined cutoff condition being satisfied. 14. The semiconductor apparatus according to claim 10, wherein the power semiconductor element includes a collector terminal on the first terminal side provided on a first surface side of a substrate, a gate terminal provided on a second surface side of the substrate, and an emitter terminal on the second terminal side provided on the second surface side of the substrate,the semiconductor apparatus includes a semiconductor element having a collector terminal shared with the collector terminal of the power semiconductor element and provided on the first surface side of the substrate and an emitter terminal and a gate terminal that are electrically connected to each other and provided on the second surface side of the substrate, andthe latch section receives the power source supply via the semiconductor element from the first terminal.

이 특허에 인용된 특허 (15)

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내보내기

상세정보
내보내기 구분	파일저장 인쇄 메일전송
구성항목	관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 공고번호, 공고일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표출원인, 출원인국적, 출원인주소, 발명자, 발명자E, 발명자코드, 발명자주소, 발명자 우편번호, 발명자국적, 대표IPC, IPC코드, 요약, 미국특허분류, 대리인주소, 대리인코드, 대리인(한글), 대리인(영문), 국제공개일자, 국제공개번호, 국제출원일자, 국제출원번호, 우선권, 우선권주장일, 우선권국가, 우선권출원번호, 원출원일자, 원출원번호, 지정국, Citing Patents, Cited Patents
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특허 상세정보

Semiconductor apparatus

초록
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이 특허에 인용된 특허 (15)

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Semiconductor apparatus

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이 특허에 인용된 특허 (15)

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과제정보

상세정보조회

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IPC 상세정보(version : 201201)

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