Method for implanting a piezoelectric material
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-041/22
H01L-041/313
H03H-009/13
H03H-003/02
출원번호
US-0808703
(2011-07-05)
등록번호
US-9991439
(2018-06-05)
우선권정보
FR-10 55478 (2010-07-06)
국제출원번호
PCT/EP2011/061290
(2011-07-05)
§371/§102 date
20130107
(20130107)
국제공개번호
WO2012/004250
(2012-01-12)
발명자
/ 주소
Deguet, Chrystel
Blanc, Nicolas
Imbert, Bruno
Moulet, Jean-Sebastien
출원인 / 주소
Commissariat à l'énergie atomique et aux énergies alternatives
대리인 / 주소
Oblon, McClelland, Maier & Neustadt, L.L.P.
인용정보
피인용 횟수 :
0인용 특허 :
3
초록▼
A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive la
A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive layer and a metal element outside the stack; b) an ionic and/or atomic implantation, through the conductive layer and the metal layer; c) transfer of the substrate onto a transfer substrate, followed by fracturing of the transferred piezoelectric substrate, in an embrittlement area.
대표청구항▼
1. A method for producing a structure made of a piezoelectric material, the method comprising: producing a stack including at least one buried metal layer and at least one electrically conductive surface layer on a substrate made of piezoelectric material, wherein at least one electrical contact is
1. A method for producing a structure made of a piezoelectric material, the method comprising: producing a stack including at least one buried metal layer and at least one electrically conductive surface layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive surface layer and the metal layer and a metal element outside the stack to establish a ground reference;implanting one or more gaseous species, through an upper surface of the at least one electrically conductive surface layer and the at least one buried metal layer, to form an embrittlement area in the piezoelectric substrate; andassembling the stack with a transfer substrate, followed by fracturing of the substrate made of the piezoelectric material, in the embrittlement area, to form a stack including at least one layer made of the piezoelectric material, the metal layer, and the transfer substrate. 2. The method according to claim 1, wherein the at least one electrically conductive surface layer is also thermally conductive. 3. The method according to claim 1, wherein the at least one electrically conductive surface layer is made of a material selected from the group consisting of: a metal selected from the group consisting of Mo, Ni, Pt, Cr, Ru, Ti, W, Co, Ta, Cu, Al, Sn, and Ga;an alloy of said metals; anda material having at least one of the following properties: a thermal conductivity greater than 10 W/m·K, an electrical conductivity greater than 106 Siemens/m, and an acoustic impedance greater than 1·105 g/cm2·s. 4. The method according to claim 1, wherein the at least one electrically conductive surface layer has a squared resistivity lower than 10 Ω. 5. The method according to claim 1, wherein the at least one electrically conductive surface layer has a squared resistivity lower than 1 Ω. 6. The method according to claim 1, wherein the at least one electrically conductive surface layer is between 10 nm and 200 nm thick. 7. The method according to claim 1, further comprising, before the implanting, densifying materials of the stack. 8. The method according to claim 1, wherein the at least one electrically conductive surface layer is eliminated after the implanting and before the assembling. 9. The method according to claim 1, further comprising forming a bonding layer or sacrificial layer, or a Bragg network, on the at least one metal layer. 10. The method according to claim 1, wherein the metal element outside the stack is a substrate supporting the stack. 11. The method according to claim 1, further comprising forming a sacrificial layer, or a Bragg network, or a bonding layer, on the transfer substrate before assembly. 12. The method according to claim 1, wherein the piezoelectric material is made of LiNbO3 or LiTaO3. 13. A method for producing a structure made of a piezoelectric material, the method comprising: producing a single layer, which simultaneously is a metal layer and an electrically conductive surface layer, on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the single layer and a metal element outside the single layer to establish a ground reference;implanting one or more gaseous species, through an upper surface of the single layer, to form an embrittlement area in the piezoelectric substrate; andassembling the single layer with a transfer substrate, followed by fracturing of the substrate made of the piezoelectric material, in the embrittlement area, to form a stack including at least one layer made of the piezoelectric material, the single layer, and the transfer substrate. 14. The method according to claim 13, wherein, after the implanting and before the assembling, a proportion of thickness of the single layer is eliminated. 15. The method according to claim 13, wherein the metal element outside the single layer is a substrate supporting the single layer. 16. The method according to claim 13, further comprising forming a sacrificial layer, or a Bragg network, or a bonding layer, on the transfer substrate before assembly. 17. The method according to claim 13, wherein the piezoelectric material is made of LiNbO3 or LiTaO3. 18. A method for producing a structure made of a piezoelectric material, the method comprising: producing a stack including at least one buried metal layer, at least one bonding layer, and at least one electrically conductive surface layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive surface layer and the metal layer and a metal element outside the stack through a conductive area formed in the bonding layer to establish a ground reference;implanting one or more gaseous species, through an upper surface of the at least one electrically conductive surface layer and the at least one buried metal layer, to form an embrittlement area in the piezoelectric substrate; andassembling the stack with a transfer substrate, followed by fracturing of the substrate made of the piezoelectric material, in the embrittlement area, to form a stack including at least one layer made of the piezoelectric material, the metal layer, the bonding layer, and the transfer substrate.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (3)
Lur Water (Taipei TWX) Chen Ben (Hsin-Chu TWX) Huang Cheng H. (Hsin Chu TWX), Charge damage free implantation by introduction of a thin conductive layer.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.